Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.

Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.

Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.

Abstract: A processing system is disclosed for conducting various processes on substrates, such as semiconductor wafers by varying the exposure to a chemical ambient. The processing system includes a processing region having an inlet and an outlet for flowing fluids through the chamber. The outlet is in communication with a conductance valve that is positioned in between the processing region outlet and a vacuum exhaust channel. The conductance valve rapidly oscillates or rotates between open and closed positions for controlling conductance through the processing region. This feature is coupled with the ability to rapidly pulse chemical species through the processing region while simultaneously controlling the pressure in the processing region. Of particular advantage, the conductance valve is capable of transitioning the processing region through pressure transitions of as great as 100:1 while chemical species are flowed through the processing region using equally fast control valves in a synchronous pulsed fashion.

Abstract: A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater.

Abstract: An apparatus of a reactor or processing chamber comprising a chamber having a resistive heater disposed within a volume of the chamber, including a stage having a surface area to support a substrate such as a wafer and a body including at least one heating element, a shaft coupled to the body, a plurality of temperature sensors coupled to the chamber, each configured to measure a temperature at separate points associated with the surface area of the stage, and a motor coupled to the shaft and configured to rotate the resistive heater about an axis through the shaft. In this manner, the temperature sensors may measure a temperature at separate points of the surface area of the stage. A method of rotating a shaft and measuring a plurality of temperatures over the surface area of the stage or over a wafer seated on the stage with the plurality of temperature sensors.

Abstract: A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater.

Abstract: A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater.

Abstract: A temperature probe has a light conductor for optically transmitting temperature information to a pyrometer. The light conductor has a first portion which is adapted to capture temperature information and a second portion which is connected to the pyrometer. The probe also has an enclosure for protecting the second portion of the light conductor. The enclosure in turn has a passageway for housing the second portion of the light conductor and an opening for projecting the first portion of the light conductor from the passageway to the outside of the enclosure. Additionally, a seal is provided in the passageway adjacent the opening to encapsulate the second portion of the light conductor inside the passageway.

Abstract: A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature and using a first, a second and a third probe to measure the temperature of the substrate. The first probe has a first effective reflectivity and the second probe has a second effective reflectivity. The first probe produces a first temperature indication, the second probe produces a second temperature indication and the third probe produces a third temperature indication. The first and second effective reflectivities may be different. From the first and second temperature indications, a corrected temperature reading for the first probe may be derived, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than an uncorrected readings produced by both the first and second probes.

Abstract: A method of calibrating a temperature measurement system including the steps of heating a first substrate having a high emissivity value to a first process temperature; while the first substrate is at the first process temperature, calibrating a first probe and a second probe to produce temperature indications from the first substrate that are substantially the same, the first probe having associated therewith a first effective reflectivity and the second probe having associated therewith a second effective reflectivity, the first and second effective reflectivities being different; heating a second substrate having a low emissivity value to a second process temperature, the low emissivity value being lower than the high emissivity value; with the second substrate at the second process temperature, using both the first probe and the second probe to measure the temperature of the second substrate, the first probe producing a first temperature indication and the second probe producing a second temperature indic

Abstract: A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature; using a first, a second and a third probe to measure the temperature of the substrate, the first and third probes having a first effective reflectivity and the second probe having a second effective reflectivity, the first probe producing a first temperature indication, the second probe producing a second temperature indication and the third probe producing a third temperature indication, and wherein the first and second effective reflectivities are different; and from the first and second temperature indications, deriving a corrected temperature reading for the first probe, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than an uncorrected readings produced by both the first and second probes.

Abstract: A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature; using a first probe and a second probe to measure the temperature of the substrate, the first probe having a first effective reflectivity and the second chamber having a second effective reflectivity, the first probe producing a first temperature indication and the second probe producing a second temperature indication, and wherein the first and second effective reflectivities are different; and from the first and second temperature indications, deriving a corrected temperature reading for the first probe, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than are uncorrected readings produced by both the first and second probes.