Patents by Inventor Bruno Adam

Bruno Adam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Adjustable bunk and vehicle equipped with the same
    Patent number: 10343730
    Abstract: An adjustable bunk is adapted for trucks or other vehicles equipped with a sleeping compartment. The bunk has a front end and a foot extremity and includes at least a first segment, pivotally connected to a second segment, by a supple connection, wherein the first segment may be in a horizontal position or in a non-horizontal position, while the second segment remains in a horizontal position. The first segment of the bunk is suspendable on an upper support placed above the bunk.
    Type: Grant
    Filed: December 17, 2014
    Date of Patent: July 9, 2019
    Assignee: Volvo Truck Corporation
    Inventors: Bruno Adam, Thibault Picardel-Vaillier, Laure Verger
  • ADJUSTABLE BUNK AND VEHICLE EQUIPPED WITH THE SAME
    Publication number: 20170341688
    Abstract: An adjustable bunk is adapted for trucks or other vehicles equipped with a sleeping compartment. The bunk has a front end and a foot extremity and includes at least a first segment, pivotally connected to a second segment, by a supple connection, wherein the first segment may be in a horizontal position or in a non-horizontal position, while the second segment remains in a horizontal position. The first segment of the bunk is suspendable on an upper support placed above the bunk.
    Type: Application
    Filed: December 17, 2014
    Publication date: November 30, 2017
    Applicant: VOLVO TRUCK CORPORATION
    Inventors: Bruno ADAM, Thibault PICARDEL-VAILLIER, Laure VERGER
  • Method for producing large-area power semiconductor components
    Patent number: 4806497
    Abstract: A method for producing large-area power semiconductor components, wherein at least two irradiation processes (neutron irridiation, ion implantation electron, .gamma.or proton irradiation) are used to produce the basic doping, to introduce deep pn junctions and to introduce recombination centers. It is precisely for the critical process steps (p-base, n-type stop layer) that the improved homogeneity of the layers signifies a higher yield and improved limit data for the finished components.
    Type: Grant
    Filed: September 11, 1987
    Date of Patent: February 21, 1989
    Assignee: BBC Brown Boveri AG
    Inventors: Bruno Adam, Andre Jaecklin, Thomas Vlasak