Abstract: A power generating device is specified, which comprises a generator (1), which is coupled to a drive unit, in particular to a turbine, and is connected via a rectifier (2) to a DC voltage intermediate circuit (3), an inverter (4), which is connected to the DC voltage intermediate circuit (3) and, on the AC voltage output side, has n phases with n AC voltage connections (5), and a filter arrangement (6), which is connected to the AC voltage connections (5). Furthermore, the filter arrangement (6) has a first filter inductance (7) and a second filter inductance (8), which is connected in series with the first, for each AC voltage connection (5), with a filter capacitor (9) being connected to the junction point of the first filter inductance (7) and the second filter inductance (8), and the filter capacitors (9) being connected to one another in a star circuit at a star point (10).

Abstract: A power generating device is specified, which comprises a generator (1) , which is coupled to a drive unit, in particular to a turbine, and is connected via a rectifier (2) to a DC voltage intermediate circuit (3), an inverter (4), which is connected to the DC voltage intermediate circuit (3) and, on the AC voltage output side, has n phases with n AC voltage connections (5), and a filter arrangement (6), which is connected to the AC voltage connections (5). Furthermore, the filter arrangement (6) has a first filter inductance (7) and a second filter inductance (8), which is connected in series with the first, for each AC voltage connection (5), with a filter capacitor (9) being connected to the junction point of the first filter inductance (7) and the second filter inductance (8), and the filter capacitors (9) being connected to one another in a star circuit at a star point (10).

Abstract: A method and a circuit arrangement having a device for measuring the depletion layer temperature of a GTO are specified. In this case, a measurement current (I.sub.M) is impressed in the gate circuit, and the voltage (U.sub.GR) between the cathode and gate is measured, with an applied measurement current (I.sub.M), after the transient turn-off processes have decayed. This voltage (U.sub.GR) is at this time dependent on the depletion layer temperature of the GTO. It thus becomes possible to measure the depletion layer temperature directly on the element, that is to say without circuitous routes via a heat sink temperature and calculation of the thermal resistance or the like, and during operation, continuously, and in consequence to monitor and control the stress level on the GTO precisely.