Abstract: An optoelectronic device including a first circuit including at least one light-emitting diode emitting through a first surface of the first circuit and including first and second electrodes; a second circuit for controlling the light-emitting diode, positioned on a second surface of the first circuit opposite to the first surface, including first and second electrically-conductive pads; and an electrically-conductive layer located at the interface between the first and second circuits, the electrically-conductive layer being divided into first and second portions orthogonally to the stack of the first and second circuits, the first electrode being electrically coupled to the first conductive pad via the first portion of the conductive layer and the second electrode being electrically coupled to the second conductive pad via the second portion of the conductive layer.

Abstract: A filtering device comprising first and second interference filters each comprising a Fabry-Perot cavity formed by semi-reflective layers between which a structured layer is arranged, wherein the structured layer belongs conjointly to the two filters, has a substantially constant thickness, is substantially planar and comprises two materials with different refractive indices arranged in each of the cavities, forming vertical structurings, the cavity of the second filter comprises a spacer arranged between one of the semi-reflective layers and the structured layer so that a distance between the semi-reflective layers of the cavity of the second filter is greater than a distance between the semi-reflective layers of the cavity of the first filter, and the filters comprise a second structured layer arranged in the cavities of the filters, and/or each filter comprises a second Fabry-Perot cavity comprising a third structured layer.

Abstract: The present disclosure relates to shaping of optic beams at the inputs/outputs of a photonic chip, the spectral widening of the light coupled to this chip, and a method for manufacturing the chip. The photonic chip includes a light guiding layer supported by a substrate. The chip includes at least one light guiding structure made of silicon coupled on one side to a vertical coupler and on another side to an optical component integrated in the light guiding layer. The photonic chip has a front face on the vertical coupler side and a rear face on the substrate side. A collimation structure of digital lens type is integrated at the level of the rear face to collimate the mode size of the light beam incident on the lens and coming from the vertical coupler.

Abstract: A luminous panel includes a substrate having electric connections and an array of microchips secured to the substrate and connected to the electric connections in order to be driven. Each microchip includes control circuit based on transistors formed in a silicon volume, the circuit being connected to the substrate connections, and a micro-LED secured to the control circuit and connected thereto in order to be controlled.

Abstract: A filtering device comprising first and second interference filters each comprising a Fabry-Perot cavity formed by semi-reflective layers between which a structured layer is arranged, wherein the structured layer belongs conjointly to the two filters, has a substantially constant thickness, is substantially planar and comprises two materials with different refractive indices arranged in each of the cavities, forming vertical structurings, the cavity of the second filter comprises a spacer arranged between one of the semi-reflective layers and the structured layer so that a distance between the semi-reflective layers of the cavity of the second filter is greater than a distance between the semi-reflective layers of the cavity of the first filter, and the filters comprise a second structured layer arranged in the cavities of the filters, and/or each filter comprises a second Fabry-Perot cavity comprising a third structured layer.

Abstract: A distributed device for the detection of a substance is disclosed, comprising: a distributed optical excitation source (21) including a first optical fiber (22) having a plurality of extraction regions (24), each extraction region (24) being adapted to extract part of the light carried by the first optical fiber (22) from said fiber; and a distributed acoustic sensor (25) including a second optical fiber (26).

Abstract: A filtering device comprising first and second interference filters each comprising a Fabry-Perot cavity formed by semi-reflective layers between which a structured layer is arranged, wherein the structured layer belongs conjointly to the two filters, has a substantially constant thickness, is substantially planar and comprises two materials with different refractive indices arranged in each of the cavities, forming vertical structurings, the cavity of the second filter comprises a spacer arranged between one of the semi-reflective layers and the structured layer so that a distance between the semi-reflective layers of the cavity of the second filter is greater than a distance between the semi-reflective layers of the cavity of the first filter, and the filters comprise a second structured layer arranged in the cavities of the filters, and/or each filter comprises a second Fabry-Perot cavity comprising a third structured layer.

Abstract: A photonic chip comprising a light guiding layer supported by a substrate and covered with an encapsulation layer. The chip has a front face on the side of the encapsulation layer and a back face on the side of the substrate. The light guiding layer includes a light guiding structure optically coupled to a vertical coupler configured to receive light from the waveguide and to form a light beam directed towards either the front face or the back face. The chip also comprises a collimation structure formed at least partly in the light guiding layer and an arrangement of one or several reflecting structures each on either the front face or on the back face. This arrangement is made so as to assure propagation of light between the vertical coupler and the collimation structure along an optical path with at least one fold.

Abstract: The present disclosure relates to shaping of optic beams at the inputs/outputs of a photonic chip, the spectral widening of the light coupled to this chip, and a method for manufacturing the chip. The photonic chip includes a light guiding layer supported by a substrate. The chip includes at least one light guiding structure made of silicon coupled on one side to a vertical coupler and on another side to an optical component integrated in the light guiding layer. The photonic chip has a front face on the vertical coupler side and a rear face on the substrate side. A collimation structure of digital lens type is integrated at the level of the rear face to collimate the mode size of the light beam incident on the lens and coming from the vertical coupler.

Abstract: A photonic chip comprising a light guiding layer supported by a substrate and covered with an encapsulation layer. The chip has a front face on the side of the encapsulation layer and a back face on the side of the substrate. The light guiding layer includes a light guiding structure optically coupled to a vertical coupler configured to receive light from the waveguide and to form a light beam directed towards either the front face or the back face. The chip also comprises a collimation structure formed at least partly in the light guiding layer and an arrangement of one or several reflecting structures each on either the front face or on the back face. This arrangement is made so as to assure propagation of light between the vertical coupler and the collimation structure along an optical path with at least one fold.

Abstract: A distributed device for the detection of a substance is disclosed, comprising: a distributed optical excitation source (21) including a first optical fiber (22) having a plurality of extraction regions (24), each extraction region (24) being adapted to extract part of the light carried by the first optical fiber (22) from said fiber; and a distributed acoustic sensor (25) including a second optical fiber (26).

Abstract: The invention relates to an optoelectronic device (45) including: light-emitting diodes (LED) including semiconductor elements (24); current-limiting components (50), wherein each component is connected in series to one of the semiconductor elements and has a resistance that increases with the strength of the current.

Abstract: A luminous panel includes a substrate having electric connections and an array of microchips secured to the substrate and connected to the electric connections in order to be driven. Each microchip includes control circuit based on transistors formed in a silicon volume, the circuit being connected to the substrate connections, and a micro-LED secured to the control circuit and connected thereto in order to be controlled.

Abstract: A filtering device comprising first and second interference filters each comprising a Fabry-Perot cavity formed by semi-reflective layers between which a structured layer is arranged, wherein the structured layer belongs conjointly to the two filters, has a substantially constant thickness, is substantially planar and comprises two materials with different refractive indices arranged in each of the cavities, forming vertical structurings, the cavity of the second filter comprises a spacer arranged between one of the semi-reflective layers and the structured layer so that a distance between the semi-reflective layers of the cavity of the second filter is greater than a distance between the semi-reflective layers of the cavity of the first filter, and the filters comprise a second structured layer arranged in the cavities of the filters, and/or each filter comprises a second Fabry-Perot cavity comprising a third structured layer.

Abstract: The present invention concerns a method for controlling the emitting wavelength of a laser source (10) for a passive optical network, the laser source (10) comprising: a first Bragg mirror (12), a second Bragg mirror (14), a cavity (16) delimited by both Bragg mirrors (12, 14), the cavity (16) comprising an optical filter (18) and an active medium (20), the method comprising the steps of: measuring the temperature of the active medium (20), setting the temperature of the optical filter (18) in accordance with the measured temperature of the active medium (20), the temperature of the optical filter (18) being higher than the measured temperature.

Abstract: Light-emitting device (100) comprising: a light-emitting diode (102) comprising: an emitting layer comprising a ternary or quaternary semiconductor including a chemical element from column 13 of the periodic table of elements, among Al, Ga and In, of which the atomic composition varies over the thickness of the emitting layer, and/or at least two emitting layers each comprising such a semiconductor, the atomic compositions of said element being different from one layer to another, a device (108) that detects a wavelength and an intensity of a light emitted by the diode, a switched-mode electric power supply (110) able to power the diode with a periodic signal comprising a duty cycle ?, a device (111) for controlling the switched-mode electric power supply which can alter ? and a peak value of the periodic signal according to the values detected and target values.

Abstract: A light-emitting device including: a light-emitting diode including an active zone coupled to phosphorus; a detector of a spectrum and of an intensity of a light to be emitted by the light-emitting diode; a switched-mode electric power supply configured to electrically power the light-emitting diode with a periodic signal with a duty cycle ? such that ??]0;1]; a controller of the switched-mode electric power supply which can alter at least one of a peak value, a period, and the duty cycle ? of the periodic signal according to the spectrum and intensity of the light to be detected and according to target values of the spectrum and of the intensity.

Abstract: The invention relates to an optoelectronic device (45) including: light-emitting diodes (LED) including semiconductor elements (24); current-limiting components (50), wherein each component is connected in series to one of the semiconductor elements and has a resistance that increases with the strength of the current.

Abstract: The present invention concerns a method for controlling the emitting wavelength of a laser source (10) for a passive optical network, the laser source (10) comprising: a first Bragg mirror (12), a second Bragg mirror (14), a cavity (16) delimited by both Bragg mirrors (12, 14), the cavity (16) comprising an optical filter (18) and an active medium (20), the method comprising the steps of: measuring the temperature of the active medium (20), setting the temperature of the optical filter (18) in accordance with the measured temperature of the active medium (20), the temperature of the optical filter (18) being higher than the measured temperature.

Abstract: This overhead projector comprises: a screen (4) equipped with a frame and a translucent panel tautened on this frame, the translucent panel having a front face (20) on which the images are displayed and a rear face (8) on which the images are projected, the screen (4) being capable of being shifted between a retracted position and a stretched position in which the surface area of the panel is increased by at least 10% relatively to the surface area of the panel in its retracted position an apparatus (5) for projecting images on the rear face of the translucent panel this apparatus (5) being capable of adapting the size of the projected images to the retracted position as well as to the stretched position of the screen.