Abstract: Information can be communicated back from a receiver to a transmitter over a serial link designed for communication to be essentially only in one direction without requiring a separate feedback path with an extra wire. This is achieved by changing at least one characteristic of the receiver input. For example, the receiver input impedance, the receiver input voltage, or both, may be altered. The change in a characteristic of the receiver input can be detected by an appropriately designed transmitter, and such detection can be used to trigger a change in the behavior of the transmitter. Advantageously, only simple alterations are required in conventional serial link circuits to provide a low bandwidth reverse communication path over the same wires. Such a change in a receiver input characteristic can also be employed to inform a transmitter of the existence of a receiver that is on a card that is hot-plugged into system.

Abstract: An image sensor circuit which employs a photodiode in conjunction with a charge transfer mechanism. By employing the photodiode, at least a portion of the light sensed does not pass through a layer of polysilicon, and so is not prevented from reaching the sensing area by the polysilicon. The image sensor circuit of the invention is made up of device structures readily available in standard CMOS process technologies Advantageously, image sensors embodying the invention show substantially improved quantum efficiency for short wavelength light over the prior art sensors. In addition, image sensors embodying the invention display improved dark current uniformity, thus improving yield.

Abstract: A facility is provided for correcting fixed column noise that may appear in a fingerprint image acquired from a capacitive fingerprint sensor. In particular, corrective gain and offset values are determined for each column of pixel signals generated by the sensor and are applied to such signals to greatly diminish the fixed column noise that may be present in that column.

Abstract: A single-polysilicon active pixel, methods for operating and making same, and an imaging device employing same are disclosed. The single-polysilicon active pixel comprises a photo site located on a substrate for generating and storing charge carriers, the charge carriers being generated from photonic energy incident upon the photo site and semiconductor substrate, a photo gate, a transfer transistor and output and reset electronics. The gate of the transfer transistor and the photo gate are defined in a single layer of polysilicon disposed on the semiconductor substrate. The source of transfer transistor is a doped region of substrate, referred to as a coupling diffusion, which provides the electrical coupling between the photo gate and the transfer transistor. The coupling diffusion allows for the transfer of a signal stored in a photo site under the photo gate to the output electronics for processing. A plurality of such single-polysilicon active pixels can be arranged to form an imaging system.

Abstract: An active pixel image sensor includes an array of pixels arranged in a first group and a second group. The first group may constitute a row and the second group may constitute a column, for example. A first common conductor is coupled to the pixels in the first group for conducting control signals. A second common conductor is coupled to the pixels in the second group for selectively transmitting signals to processing electronics. Each of the pixels includes a plurality of sensing elements that are each configured for capturing a portion of energy from an object to be imaged. At least one of the sensing elements is of a type distinct from another of the sensing elements. For example, one of the sensing elements may be a photogate and another may be a photodiode. An amplifying arrangement is provided for receiving signals from selected ones of the plurality of sensing elements and for selectively providing output signals to the second common conductor.