Abstract: A motor controller (30) includes three analog Hall-effect sensors (42, 44, 46) for forming continuous-time signals proportional to the sine and cosine of the position of the rotor (24) of a motor (20). The sine and cosine signals are differentiated to obtain signals proportional to the rotor rate times the sine and cosine values. These integrated values are then multiplied by the cosine and inverse of the sine values, respectively, to obtain values equal to the rotor rate times the square of the cosine and the rotor rate times the square of the sine. These latter two values are summed to obtain an output signal proportional to the rotor rate based on the trigonometric identity sin2(x)+cos2(x)=1. Since the motor controller (30) derives a high-resolution value for the rotor rate, it may be used for fine resolution control of brushless motors and the like.

Abstract: A motor controller (30) includes three analog Hall-effect sensors (42, 44, 46) for forming continuous-time signals proportional to the sine and cosine of the position of the rotor (24) of a motor (20). The sine and cosine signals are differentiated to obtain signals proportional to the rotor rate times the sine and cosine values. These integrated values are then multiplied by the cosine and inverse of the sine values, respectively, to obtain values equal to the rotor rate times the square of the cosine and the rotor rate times the square of the sine. These latter two values are summed to obtain an output signal proportional to the rotor rate based on the trigonometric identity sin2(x)+cos2(x)=1. Since the motor controller (30) derives a high-resolution value for the rotor rate, it may be used for fine resolution control of brushless motors and the like.

Abstract: Verification of proper operation of computer programs executing in a central processor and protection of critical data is accomplished by an independent software monitor which accepts data keys from the executing program and outputs defined legitimate codes in response thereto. Legitimate codes and selected portions of input data keys are compared to validate proper softward execution.

Abstract: A semiconductor material of a first conductivity type has one of its surfaces subjected to high energy oxygen ion implantation, thereby forming an oxide layer below that surface. A gate is formed by masking at least a portion of the surface, exposing the unmasked portion to ion radiation so as to implant impurity ions in the region of the semiconductor material between its unmasked surface and the upper side of the subsurface oxide layer, and metallizing the surface above the implanted region. After removal of the masking material, source and drain areas are formed by high energy ion implantation in the semiconductor material adjacent the lower side of the subsurface oxide layer, the areas having a conductivity opposite the first conductivity type. After windows to the source and drain areas are opened in the semiconductor material and subsurface oxide layer, the exposed surfaces of these areas are metallized.