Patents by Inventor Bryan H. Nettles

Bryan H. Nettles has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11958022
    Abstract: A polymer handling method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated in a manner that the silicon polymers are hydrolyzed. The method creates a heated treatment gas with a moisture content that both treats the polymer to a depth of about 0.25 mm to prohibit formation of the friction and shock sensitive layer near the polymer surface and keeps the hydrolyzed polymer humidified. Furthermore the polymer handling method includes inactivation of the polymer, removal of the polymer of the system and disposal of the polymer after removal.
    Type: Grant
    Filed: October 7, 2020
    Date of Patent: April 16, 2024
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), HIGH-PURITY SILICON CORPORATION
    Inventors: Wes Teichmiller, Bryan H. Nettles, Mark Servos, Matthias A. Colomb
  • Patent number: 11786877
    Abstract: In the hydrochlorination reaction, silicon tetrachloride (STC), metallurgical silicon, and hydrogen are converted to trichlorosilane (TCS) at about 540° C. Previously, a pilot-scale reactor was used to study the yield of TCS produced by the hydrochlorination reaction. The yield observed by experimentation compared favorably with a scalable mathematical model developed to predict the rate of TCS conversion. The model predicted that 90% of the final amount of TCS produced was achieved after the reactant gas traveled a quarter of the vertical distance in the reaction section of the reactor. The pilot-scale reactor was shortened to verify the model predictions. In addition, some catalytic effects on the reaction were studied.
    Type: Grant
    Filed: March 23, 2021
    Date of Patent: October 17, 2023
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), HIGH-PURITY SILICON CORPORATION
    Inventors: Matthias A. Colomb, Bryan H. Nettles
  • Publication number: 20220105477
    Abstract: A polymer handling method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated in a manner that the silicon polymers are hydrolyzed. The method creates a heated treatment gas with a moisture content that both treats the polymer to a depth of about 0.25 mm to prohibit formation of the friction and shock sensitive layer near the polymer surface and keeps the hydrolyzed polymer humidified. Furthermore the polymer handling method includes inactivation of the polymer, removal of the polymer of the system and disposal of the polymer after removal.
    Type: Application
    Filed: October 7, 2020
    Publication date: April 7, 2022
    Applicant: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
    Inventors: Wes Teichmiller, Bryan H. Nettles, Mark Servos, Matthias A. Colomb
  • Publication number: 20210291133
    Abstract: In the hydrochlorination reaction, silicon tetrachloride (STC), metallurgical silicon, and hydrogen are converted to trichlorosilane (TCS) at about 540° C. Previously, a pilot-scale reactor was used to study the yield of TCS produced by the hydrochlorination reaction. The yield observed by experimentation compared favorably with a scalable mathematical model developed to predict the rate of TCS conversion. The model predicted that 90% of the final amount of TCS produced was achieved after the reactant gas traveled a quarter of the vertical distance in the reaction section of the reactor. The pilot-scale reactor was shortened to verify the model predictions. In addition, some catalytic effects on the reaction were studied.
    Type: Application
    Filed: March 23, 2021
    Publication date: September 23, 2021
    Applicant: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
    Inventors: Matthias A. Colomb, Bryan H. Nettles