Abstract: A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.

Abstract: Passivation coatings and gettering agents may be used in an Extreme Ultraviolet (EUV) source which uses tin (Sn) vapor as a plasma “fuel” to prevent contamination and corresponding loss of reflectivity due to tin contamination. The passivation coating may be a material to which tin does not adhere, and may be placed on reflective surfaces in the source chamber. The gettering agent may be a material that reacts strongly with tin, and may be placed outside of the collector mirrors and/or on non-reflective surfaces. A passivation coating may also be provided on the insulator between the anode and cathode of the source electrodes to prevent shorting due to tin coating the insulator surface.

Abstract: In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.

Abstract: Erosion of material in an electrode in a plasma-produced extreme ultraviolet (EUV) light source may be reduced by treating the surface of the electrode. Grooves may be provided in the electrode surface to increase re-deposition of electrode material in the grooves. The electrode surface may be coated with a porous material to reduce erosion due to brittle destruction. The electrode surface may be coated with a pseudo-alloy to reduce erosion from surface waves caused by the plasma in molten material on the surface of the electrode.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a plurality of openings in a portion of a first side of a substrate, bonding a first silicon layer of a silicon on insulator wafer to the first side of the substrate, wherein the silicon on insulator wafer comprises the first silicon layer disposed on an insulator layer disposed on a second silicon layer, forming a plurality of support structures by removing a portion of a second side of the substrate, removing the second silicon layer and removing the insulator layer.

Abstract: A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.

Abstract: According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.

Abstract: An extreme ultraviolet (EUV) pellicle including a thin film or membrane and a supportive wire mesh. The pellicle allows EUV radiation to pass through the pellicle to a reticle but prevents particles from passing through the pellicle. A buffer gas supports the film against the wire mesh. The film or membrane may be embedded with support fibers or beams.

Abstract: According to a first embodiment of the invention, a dual cathode electrode for generating EUV light is disclosed. The dual cathode electrode may include a first outer cathode, a second inner cathode, and an anode disposed between the inner and outer cathodes. The dual cathode electrode also includes a plasma disposed in between the cathodes that emits EUV photons when it is excited by an arc between the anode and the cathodes. According to a second embodiment of the invention, several Dense Plasma Focus (DPF) electrodes are placed along a circle. The DPF electrodes, when activated, will emit electron photons from the circle in which they are placed thereby avoiding obscuration used to protect UV mirrors against debris.

Abstract: According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.

Abstract: According to an embodiment of the invention, extreme ultraviolet (EUV) photolithography is performed using lobster eye transmission optics. A light source, such as a source plasma, is located at the center of a circle. Several mirror segments are arranged on an arc of the circle. The mirror segments may be arranged so that the light generated by the light source is collimated after being reflected. The light source may be a source plasma capable of generating EUV photons.

Abstract: An electrode in an extreme ultraviolet (EUV) source of an EUV lithography tool. The extreme ultraviolet source may be operable to produce a plasma which emits extreme ultraviolet radiation.

Abstract: In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.

Abstract: A diamond insulator collar and methods for fabricating a diamond insulator collar for electrical discharge gas plasma EUV source. The insulating collar is positioned at the base of the central electrode in the pre-ionization region of the plasma head. The insulating collar prevents electrical shorting between the outer electrode and the central electrode in this region. In one embodiment of a method for providing a wire mesh-reinforced diamond insulator collar, a mandrel is provided that replicates the shape of the base of the central electrode. A wire mesh is wrapped around the mandrel conforming to the shape of the mandrel. The wire mesh is coated with electrically insulating diamond using known plasma enhanced chemical vapor deposition (CVD) techniques to form a non-porous coating. The mandrel is removed from the diamond-coated wire mesh providing a porous-free wire-reinforced diamond insulator collar. Embodiments of non-wire reinforced collars are presented.

Abstract: In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.

Abstract: An electrode in an extreme ultraviolet (EUV) source of an EUV lithography tool. The extreme ultraviolet source may be operable to produce a plasma which emits extreme ultraviolet radiation.

Abstract: An insulator may be operable to electrically insulate a cathode from an anode in an extreme ultraviolet (EUV) source of an EUV lithography tool. The insulator may be made of an aluminosilicate or a SiN/SiC material. The extreme ultraviolet source may be operable to produce a plasma which emits extreme ultraviolet radiation.

Abstract: An insulator may be operable to electrically insulate a cathode from an anode in an extreme ultraviolet (EUV) source of an EUV lithography tool. The insulator may be made of an aluminosilicate or a SiN/SiC material. The extreme ultraviolet source may be operable to produce a plasma which emits extreme ultraviolet radiation.

Abstract: A diamond insulator collar and methods for fabricating a diamond insulator collar for electrical discharge gas plasma EUV source. The insulating collar is positioned at the base of the central electrode in the pre-ionization region of the plasma head. The insulating collar prevents electrical shorting between the outer electrode and the central electrode in this region. In one embodiment of a method for providing a wire mesh-reinforced diamond insulator collar, a mandrel is provided that replicates the shape of the base of the central electrode. A wire mesh is wrapped around the mandrel conforming to the shape of the mandrel. The wire mesh is coated with electrically insulating diamond using known plasma enhanced chemical vapor deposition (CVD) techniques to form a non-porous coating. The mandrel is removed from the diamond-coated wire mesh providing a porous-free wire-reinforced diamond insulator collar. Embodiments of non-wire reinforced collars are presented.