Patents by Inventor Bryan Quinones
Bryan Quinones has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240048128Abstract: Methods and apparatus for controlling a switch transition in an inductive switching circuit are disclosed. A switch driver is configured to receive an indication of current through a diode associated with a first switch and dynamically control a switch transition of a second switch based on the indication of current, so as to reduce the switch transition time, when possible, whilst maintaining a voltage transient due to the switch transition within an acceptable range.Type: ApplicationFiled: August 24, 2022Publication date: February 8, 2024Applicant: Cirrus Logic International Semiconductor Ltd.Inventors: Vikas VIJAY, Eduardo VELARDE, Bryan QUINONES, Douglas J. W. MACFARLANE, David SMITH, Saurabh K. SINGH
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Publication number: 20230188156Abstract: A power converter system for converting an input voltage at an input into an output voltage at an output may comprise a switch network comprising a reactive circuit element and a plurality of switches, switch control circuitry configured to operate the plurality of switch in a plurality of periodic, sequential states to regulate the output voltage, and reference current generating circuitry. The reference current generating circuitry may include a comparator coupled to a sensed switch of the plurality of switches and configured to compare a current flowing through the sensed switch to a reference current and current-steering circuitry coupled to the comparator configured to generate the reference current and alternate the reference current between a first reference current and a second reference current whenever the switch control circuitry changes from one state of the plurality of periodic, sequential states to another state of the plurality of periodic, sequential states.Type: ApplicationFiled: November 18, 2022Publication date: June 15, 2023Applicant: Cirrus Logic International Semiconductor Ltd.Inventors: Ivan PERRY, Hasnain AKRAM, Graeme G. MACKAY, Pietro GALLINA, Chanchal GUPTA, Bryan QUINONES, Abhishek RAY
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Patent number: 10784775Abstract: A switching converter with reduced dead-time and without reverse-recovery is disclosed. The switching converter includes a first power switch coupled to a second power switch, a mode detector and a controller. The mode detector is adapted to detect a mode of operation of the first power switch and the second power switch, and to identify a first period during which the first power switch is turned on and operates in a linear mode while the second power switch is turned off. The controller is adapted to bias the second power switch with a predetermined voltage during the first period to turn on the second power switch during a second period. In the second period the first power switch is operating in a saturation mode.Type: GrantFiled: October 9, 2019Date of Patent: September 22, 2020Assignee: Dialog Semiconductor (UK) LimitedInventors: Hyungtaek Chang, Bryan Quinones, Michael Jayo
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Patent number: 10425075Abstract: Driver circuits with S-shaped gate drive voltage curves for ramp-up and ramp-down of power field effect transistors are presented. In ramp-up, the S-shaped curve rapidly ramps the gate voltage of the power FET to its threshold. This ramp-up is self-terminating. The gate voltage of the power FET is slewed through saturation with a time constant. After a predetermined time, the gate of the power FET is driven to approach the supply voltage level. In ramp-down, the S-shaped curve rapidly ramps the gate voltage of the power FET down to its threshold voltage. This ramp-down is self-terminating. The gate voltage of the power FET is slewed through saturation. The gate-source voltage of the power FET is rapidly ramped down to zero. Such S-shaped curves for the gate drive signal allow the control of the transition times of the gate drive signal to acceptable levels of voltage/current spikes and electromagnetic interference.Type: GrantFiled: April 30, 2018Date of Patent: September 24, 2019Assignee: Dialog Semiconductor (UK) LimitedInventors: Kelly Consoer, Bryan Quinones, Kevin Yi Cheng Chang, Mark Mercer
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Patent number: 10090763Abstract: A multi-level buck converter is provided with multiple control loops to regulate the output voltage across a wide duty cycle range while also regulating the flying capacitor voltage. The regulated flying capacitor voltage is exploited to drive the switch transistors that float with respect to ground.Type: GrantFiled: June 19, 2017Date of Patent: October 2, 2018Assignee: DIALOG SEMICONDUCTOR (UK) LIMITEDInventors: Mark Mercer, Bryan Quinones, Hyungtaek Chang, Michael Jayo
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Patent number: 8278932Abstract: In an integrated circuit, a state of a switch coupled to the integrated circuit is determined by comparing a switch voltage at a first terminal of the switch to a reference voltage at a first time. If the switch voltage is higher than the reference voltage, the switch is determined to be in a first state. If the switch voltage is lower than the reference voltage, the switch voltage is stored in a storage element to produce a stored voltage. The stored voltage is compared to the switch voltage at a second time after the first time. A determination is made that the switch is in the first state if the switch voltage is higher than the stored voltage at the second time. A determination is made that the switch is in a second state if the switch voltage is not higher than the stored voltage at the second time.Type: GrantFiled: November 18, 2009Date of Patent: October 2, 2012Assignee: Freescale Semiconductor, Inc.Inventors: Bryan Quinones, Randall C. Gray
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Publication number: 20110115527Abstract: In an integrated circuit, a state of a switch coupled to the integrated circuit is determined by comparing a switch voltage at a first terminal of the switch to a reference voltage at a first time. If the switch voltage is higher than the reference voltage, the switch is determined to be in a first state. If the switch voltage is lower than the reference voltage, the switch voltage is stored in a storage element to produce a stored voltage. The stored voltage is compared to the switch voltage at a second time after the first time. A determination is made that the switch is in the first state if the switch voltage is higher than the stored voltage at the second time. A determination is made that the switch is in a second state if the switch voltage is not higher than the stored voltage at the second time.Type: ApplicationFiled: November 18, 2009Publication date: May 19, 2011Inventors: Bryan Quinones, Randall C. Gray
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Patent number: 7423416Abstract: A voltage regulator includes first and second MOS transistors and a bipolar transistor. The first MOS transistor has a first conductivity type and has a drain coupled to a first power supply voltage terminal, a gate for receiving a first bias voltage, and a source. The second MOS transistor has a second conductivity type and has a source coupled to the first power supply voltage terminal, a drain coupled to the source of the first MOS transistor, and a gate for receiving a second bias voltage. The bipolar transistor has a collector coupled to the source of the first MOS transistor, a base for receiving a third bias voltage, and an emitter for providing an output voltage. The first MOS transistor and the second MOS transistor control a voltage level at the collector of the bipolar transistor in response to a varying power supply voltage provided to the first power supply voltage terminal.Type: GrantFiled: September 12, 2007Date of Patent: September 9, 2008Assignee: Freescale Semiconductor, Inc.Inventors: Bryan Quinones, William E. Edwards, Randall C. Gray
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Patent number: 7102359Abstract: According to one embodiment, an integrated fault detector circuit is used to detect one or more of the open circuit and short circuit of a load connected to an integrated circuit power MOSFET driver by directly detecting the level of current flowing in a floating current source.Type: GrantFiled: October 11, 2005Date of Patent: September 5, 2006Assignee: Freescale Semiconductor, Inc.Inventors: Gordon H. Allen, Peter J. Bills, Bryan Quinones
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Publication number: 20060082376Abstract: According to one embodiment, an integrated fault detector circuit is used to detect one or more of the open circuit and short circuit of a load connected to an integrated circuit power MOSFET driver by directly detecting the level of current flowing in a floating current source.Type: ApplicationFiled: October 11, 2005Publication date: April 20, 2006Inventors: Gordon Allen, Peter Bills, Bryan Quinones