Patents by Inventor Bryan Schlief

Bryan Schlief has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma activated conformal film deposition
    Patent number: 9230800
    Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: January 5, 2016
    Assignee: Novellus Systems, Inc.
    Inventors: Adrien LaVoie, Shankar Swaminathan, Hu Kang, Ramesh Chandrasekharan, Tom Dorsh, Dennis M. Hausmann, Jon Henri, Thomas Jewell, Ming Li, Bryan Schlief, Antonio Xavier, Thomas W. Mountsier, Bart J. van Schravendijk, Easwar Srinivasan, Mandyam Sriram
  • PLASMA ACTIVATED CONFORMAL FILM DEPOSITION
    Publication number: 20140209562
    Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
    Type: Application
    Filed: March 31, 2014
    Publication date: July 31, 2014
    Applicant: Novellus Systems, Inc.
    Inventors: Adrien LaVoie, Shankar Swaminathan, Hu Kang, Ramesh Chandrasekharan, Tom Dorsh, Dennis M. Hausmann, Jon Henri, Thomas Jewell, Ming Li, Bryan Schlief, Antonio Xavier, Thomas W. Mountsier, Bart J. van Schravendijk, Easwar Srinivasan, Mandyam Sriram
  • Plasma activated conformal film deposition
    Patent number: 8728956
    Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
    Type: Grant
    Filed: April 11, 2011
    Date of Patent: May 20, 2014
    Assignee: Novellus Systems, Inc.
    Inventors: Adrien LaVoie, Shankar Swaminathan, Hu Kang, Ramesh Chandrasekharan, Tom Dorsh, Dennis M. Hausmann, Jon Henri, Thomas Jewell, Ming Li, Bryan Schlief, Antonio Xavier, Thomas W. Mountsier, Bart J. van Schravendijk, Easwar Srinivasan, Mandyam Sriram
  • PLASMA ACTIVATED CONFORMAL FILM DEPOSITION
    Publication number: 20110256726
    Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
    Type: Application
    Filed: April 11, 2011
    Publication date: October 20, 2011
    Inventors: Adrien LaVoie, Shankar Swaminathan, Hu Kang, Ramesh Chandrasekharan, Tom Dorsh, Dennis M. Hausmann, Jon Henri, Thomas Jewell, Ming Li, Bryan Schlief, Antonio Xavier, Thomas W. Mountsier, Bart J. van Schravendijk, Easwar Srinivasan, Mandyam Sriram