Abstract: An optical switch is fabricated using micro-electro-mechanical system (“MEMS”) techniques. A thin mirror is fabricated in the major plane of the substrate and rotates about an axis perpendicular to the major plane to move into and out of an optical beam path. The mirror surface is open for chemical polishing and deposition, resulting in a high-quality mirror. In one embodiment, the backside of the mirror is patterned with reinforcing ribs. In another embodiment, a two-sided mirror is fabricated.

Abstract: An optical cross-connect is fabricated on a substrate using individual MEMs dice with mirrors that rotate into and out of an optical beam path. Each die can be aligned to a single (input-output) pair of collimators in a fiber-optic switching system. An individually accessible magnetic drive on each die provides low power consumption when re-configuring the array in addition to fast switching speeds. The state of each die can be electronically sensed to verify proper array configuration and operation of each die.

Abstract: A variable optical attenuator device is provided for modulating an optical signal. The attenuator device includes a variable attenuation assembly with an electrochromic structure interposed between a first electrode and a second electrode. The electrochromic structure is configured to reversibly change its optical characteristics from a bleached off state to a colored active state under the influence of an electrical potential applied to the first and second electrodes to thereby modulate the optical signal. The optical attenuator device includes at least one lens attached to the variable attenuation assembly. The lens cooperates with the variable attenuation assembly to direct the optical signal towards the electrochromic structure. Waveguides such as optical fibers define ports at the outer endface of the lens for the optical signal.

Abstract: The absorption of a spacer material in a Fabry-Perot type structure is changed to achieve an optical switching function. In one embodiment, the spacer material is a semiconductor material and an electronic control signal changes the Fabry-Perot between a transmissive state and a reflective state. In the reflective state, the device operates as a switch can be modeled as a mirror on a substrate of quasi-infinite thickness. In a further embodiment, a wavelength-selective optical component is placed between the input of the switch and the Fabry-Perot structure to improve the spectral response of the switch.

Abstract: An optical cross-connect is fabricated on a substrate using individual MEMs dice with mirrors that rotate into and out of an optical beam path. Each die can be aligned to a single (input-output) pair of collimators in a fiber-optic switching system. An individually accessible magnetic drive on each die provides low power consumption when re-configuring the array in addition to fast switching speeds. The state of each die can be electronically sensed to verify proper array configuration and operation of each die.

Abstract: An optical switch is fabricated using micro-electro-mechanical system (“MEMS”) techniques. A thin mirror is fabricated in the major plane of the substrate and rotates about an axis perpendicular to the major plane to move into and out of an optical beam path. The mirror surface is open for chemical polishing and deposition, resulting in a high-quality mirror. In one embodiment, the backside of the mirror is patterned with reinforcing ribs. In another embodiment, a two-sided mirror is fabricated.

Abstract: A variable optical attenuator device is provided for modulating an optical signal. The attenuator device includes a variable attenuation assembly with an electrochromic structure interposed between a first electrode and a second electrode. The electrochromic structure is configured to reversibly change its optical characteristics from a bleached off state to a colored active state under the influence of an electrical potential applied to the first and second electrodes to thereby modulate the optical signal. The optical attenuator device includes at least one lens attached to the variable attenuation assembly. The lens cooperates with the variable attenuation assembly to direct the optical signal towards the electrochromic structure. Waveguides such as optical fibers define ports at the outer endface of the lens for the optical signal.

Abstract: A switching signal having multiple sequential pulses is applied to a MEMS switch. A first pulse moves the switch from a first switch position toward a second switch position. After a selected dwell period, a second pulse is applied to dampen ringing or overshoot of the movable portions of the switch. In a further embodiment, non-symmetrical switching signals are used to cycle the switch from the first state to the second state, and back to the first.

Abstract: A bi-stable micro-machined electromechanical system (“MEMS”) switch. In a preferred embodiment, the bi-stable MEMS switch is used in an N×N optical signal switching system. Spring arms act in conjunction with a hollow beam portion of a movable center body of the switch to accommodate strain in the arms as the switch is moved from a first position to a second position, thus avoiding buckling of the spring arms. Both the first and second switch position occur at local minimums of mechanical potential energy, thus providing two stable switch states. The center body is moved in relation to static portions of the switch by an actuator, such as an electro-static comb drive.

Abstract: A elemental mirror for vehicles having a luminous reflectance of at least about 30% includes a substrate coated with a thin layer of elemental semiconductor having an index of refraction of at least 3 and an optical thickness of at least about 275 angstroms. Preferably, the elemental semiconductor coating is sputter coated silicon or germanium and a light absorbing coating is included therebehind. The mirror is spectrally nonselective with elemental semiconductor optical thicknesses of about 275 to 2400 angstroms on the front substrate surface. Spectrally selective mirrors are provided by adding an interference coating to the elemental semiconductor layer coating, preferably of a dielectric such as silicon dioxide or silicon nitride, on either the front or rear substrate surface, or by using a thicker, single elemental semiconductor layer. Instead of an absorbing coating behind the mirror, additional elemental semiconductor and dielectric thin layers may be included to reduce secondary reflections.

Abstract: A mask is placed over a center portion of a deposition source to limit angle of the flux from the source. A substrate or device with a vertical surface (referenced to a major surface of the substrate or device) is rotated past the deposition source to coat the vertical surface with material from the source. In a particular embodiment, the source is a gold sputtering target and a mirror is formed on a vertical surface of a MEMS structure having a depth of about 70-75 microns and a set-back of about 200-250 microns by sputtering about 1000 Angstroms of gold onto the vertical surface.

Abstract: A mirror having a high luminous reflectance of at least about 60% of incident light at the wavelength region of about 550 nanometers and being acromatic includes a substrate coated with a reflector comprising a multilayer thin film stack. The thin film stack comprises a first thin film layer of an elemental semiconductor which is closest to the first surface of the glass substrate and has a refractive index of greater than 3.0, a second thin film layer which is farthest from the first surface of the glass substrate, and a third thin film layer disposed between the first thin film layer and the second thin film layer, the third thin film layer having a refractive index between about 1.3 and 2.7, the second thin film layer having a refractive index greater than the third thin film layer. A light absorbing coating is included on at least one surface of the substrate and a layer of the reflector, the light absorbing coating absorbing light transmitted by the reflector coated substrate.

Abstract: An elemental mirror having a high luminous reflectance of at least about 60% of incident light at the wavelength region of about 550 nanometers and being acromatic includes a substrate coated with a reflector comprising a multilayer thin film stack. The thin film stack comprises a first thin film layer of an elemental semiconductor which is closest to the first surface of the glass substrate and has a refractive index of greater than 3.0, a second thin film layer which is farthest from the first surface of the glass substrate, and a third thin film layer disposed between the first thin film layer and the second thin film layer, the third thin film layer having a refractive index between about 1.3 and 2.7, the second thin film layer having a refractive index greater than the third thin film layer. A light absorbing coating is included on at least one surface of the substrate and a layer of the reflector, the light absorbing coating absorbing light transmitted by the reflector coated substrate.

Abstract: A flexible panel is provided that is easily and conformingly applied to a curved display screen of a VDU to afford, in a lightweight manner, variably adjustable contrast enhancement of the VDU while simultaneously providing a decrease in the amount of ambient light reflected from the curved display screen. The flexible panel is a glass microsheet layered, on one side thereof, with an antireflection coating and, on the other side, with an electrochromic device. The electrochrmic device allows for variable adjustment of the contrast of the VDU as a function of the voltage applied across the electrochromic device. The flexible glass microsheet dually possesses the advantages of conventional rigid glass panels, such as excellent optical performance, high durability, capability of being coated with various optical coatings under extreme temperature, pressure and chemical conditions and the additional benfeit of physical flexibility.

Abstract: A thin film coating system incorporates separate, separately-controlled deposition and reaction zones for depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated deposition and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.

Abstract: Describes an electrochromically active iridium oxide film of iridium, oxygen and nitrogen, wherein the ratio of atomic oxygen to iridium is from 3.2:1 to 3.4:1 and the amount of nitrogen in the film is from 11 to 13 atomic percent. Describes also an electrochromic article, e.g., a plastic article such as a plastic lens, in which the aforedescribed iridium oxide film is paired with a cathodically coloring electrochromic film, such as tungsten oxide.

Abstract: A elemental mirror for vehicles having a luminous reflectance of at least about 30% includes a substrate coated with a thin layer of elemental semiconductor having an index of refraction of at least 3 and an optical thickness of at least about 275 angstroms. Preferably, the elemental semiconductor coating is sputter coated silicon or germanium and a light absorbing coating is included therebehind. The mirror is spectrally nonselective with elemental semiconductor optical thicknesses of about 275 to 2400 angstroms on the front substrate surface. Spectrally selective mirrors are provided by adding an interference coating to the elemental semiconductor layer coating, preferably of a dielectric such as silicon dioxide or silicon nitride, on either the front or rear substrate surface, or by using a thicker, single elemental semiconductor layer. Instead of an absorbing coating behind the mirror, additional elemental semiconductor and dielectric thin layers may be included to reduce secondary reflections.

Abstract: The present invention is directed to method for manufacturing electrochromic devices using laser ablation techniques. More specifically, the present invention uses laser ablation to provide a simple, noncontact method of patterning electrochromic devices to a controlled depth, to form an electrochromically active area. Furthermore, laser patterning is conducive to the formation of multiple electrochromic devices on a single substrate.

Abstract: A method of depositing a nitrogen-containing electrochromic iridium oxide film by sputtering iridium in an atmosphere comprising oxygen and nitrogen is disclosed for use in producing a transparent electrochromic article. The article includes electroconductive films, e.g., ITO, on two substrates, one of which has a superimposed electrochromic film, e.g., tungsten oxide, and the other of which has superimposed the iridium oxide film of the invention. An ion conductive layer between the electrochromic films completes the article.

Abstract: A thin film coating system incorporates separate, separately-controlled deposition and reaction zones for depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated deposition and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.