Abstract: The present invention relates to methods and apparatus for plating a conductive material on a semiconductor substrate by rotating pad or blade type objects in close proximity to the substrate, thereby eliminating/reducing dishing and voids. This is achieved by providing pad or blade type objects mounted on cylindrical anodes or rollers and applying the conductive material to the substrate using the electrolyte solution disposed on or through the pads, or on the blades. In one embodiment of the invention, the pad or blade type objects are mounted on the cylindrical anodes and rotated about a first axis while the workpiece may be stationary or rotate about a second axis, and metal from the electrolyte solution is deposited on the workpiece when a potential difference is applied between the workpiece and the anode. In another embodiment of the present invention, the plating apparatus includes an anode plate spaced apart from the cathode workpiece.

Abstract: The present invention relates to methods for plating a conductive material on a substrate surface in a highly desirable manner. The invention removes at least one additive adsorbed on the top portion of the workpiece more than at least one additive disposed on a cavity portion, thereby allowing plating of the conductive material take place before the additive fully re-adsorbs onto the top portion and causing greater plating of the cavity portion relative to the top portion.

Abstract: An apparatus capable of assisting in controlling an electrolyte flow and an electric field distribution used for processing a substrate is provided. It includes a rigid member having a top surface of a predetermined shape and a bottom surface. The rigid member contains a plurality of channels, each forming a passage from the top surface to the bottom surface, and each allowing the electrolyte and electric field flow therethrough. A pad is attached to the rigid member via a fastener. The pad also allows for electrolyte and electric field flow therethrough to the substrate.

Abstract: The present invention provides a process for electropolishing a conductive surface of a semiconductor wafer. During the process, a contact electrode in a contact solution contacts a contact region on surface of the conductive layer with the contact solution. Further, during the process a process electrode in a process solution contacts a process region on the conductive surface with the process solution while applying an electrical potential between the contact electrode and the process electrode to electropolish the surface of the conductive layer of the process region.

Abstract: The present invention relates to methods and apparatus for plating a conductive material on a workpiece surface in a highly desirable manner. Using a workpiece-surface-influencing device, such as a mask or sweeper, that preferentially contacts the top surface of the workpiece, relative movement between the workpiece and the workpiece-surface-influencing device is established so that an additive in the electrolyte solution disposed on the workpiece and which is adsorbed onto the top surface is removed or otherwise its amount or concentration changed with respect to the additive on the cavity surface of the workpiece. Plating of the conductive material can place prior to, during and after usage of the workpiece-surface-influencing device, particularly after the workpiece surface influencing device no longer contacts any portion of the top surface of the workpiece, to achieve desirable semiconductor structures.

Abstract: A roll to roll system for forming an absorber structure for solar cells on a flexible foil as the flexible foil is advanced through units of the system and by unwrapping from a supply spool and wrapping around a take-up spool. Surface of the flexible foil is first conditioned in a conditioning unit to form an activated surface. A precursor stack including copper, gallium and indium layers is electroplated onto the activated surface by utilizing separate electroplating units for each layers. The precursor layer is reacted with at least one of Se and S in an annealing unit of the system.

Abstract: A roll-to-roll rapid thermal processing (RTP) tool with multiple chambers for forming a solar cell absorber by reacting a precursor layer on a continuous flexible workpiece. The RTP tool includes an elongated housing having a heating chamber with a predetermined temperature profile, a supply chamber and a receiving chamber. The heating chamber includes a small process gap in which the precursor layer is reacted with a Group VIA material to form an absorber layer. The continuous flexible workpiece is unrolled and advanced from the supply chamber into the heating chamber, and the processed continuous flexible workpiece is taken up and rolled in the receiving chamber.

Abstract: The present invention relates to thin film solar cell structures and methods of manufacturing them. In particular and in one aspect the present invention is related to apparatus and methods for forming a solar cell structure in which an insulator film is disposed over a region of a conductive contact layer, which is either adjacent or below the absorber layer.

Abstract: The present invention includes methods and apparatus therefrom for preparing thin films of doped semiconductors for radiation detector and photovoltaic applications, and particularly method and apparatus that increase dopants of alkali metals in Group IBIIIAVIA layers. In a particular aspect, the present invention includes a method of preparing a doped Group IBIIIAVIA absorber layer for a solar cell, with the absorber layer being formed by reaction, with a Group VIA material, of a metallic stack with a plurality of layers, in which each layer contains a concentration of an alkali metal selected from the group of Na, K and Li.

Abstract: The present invention, in one aspect, is directed to methods for manufacturing solar or photovoltaic modules for better environmental stability. In another aspect, the present invention is directed to environmentally stable solar or photovoltaic modules. These method and apparatus use a moisture barrier film to form a moisture-resistant surface on the circuit, preferably on an illuminating surface of solar cells, or an entire side of a circuit formed of a plurality of solar cells that includes the illuminating surface of solar cells. In certain embodiments, the moisture-resistant film is applied conformally, and in other embodiments the moisture-resistant film is substantially transparent.

Abstract: A method of filling a conductive material in a three dimensional integration feature formed on a surface of a wafer is disclosed. The feature is optionally lined with dielectric and/or adhesion/barrier layers and then filled with a liquid mixture containing conductive precursor, such as a solution with dissolved ruthenium precursor or a dispersion or suspension with conductive particles (e.g., gold, silver, copper), and the substrate is rotated while the mixture is on its surface. Then, the liquid carrier is dried from the feature, leaving a conductive layer in the feature. These two steps are optionally repeated until the feature is filled up with the conductor. Then, the conductor is annealed in the feature, thereby forming a dense conductive plug in the feature.

Abstract: The present invention is directed to a method and apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An inflatable tube is also provided to prevent the liquid conductor from reaching the back face of the workpiece. A plating solution can be applied to the front face of the workpiece where a retaining ring/seal further prevents the plating solution and the liquid conductor from making contact with each other. In an alternative embodiment, electrical contacts may be formed using an inflatable tube that has either been coated with a conductive material or contains a conductive object.

Abstract: The present invention relates to gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells. In one embodiment, the present invention provides a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor. The solution may further include one or both of a Cu salt and an In salt.

Abstract: The present invention relates to method and apparatus for preparing thin films of materials for various applications including electronic devices such as solar cells. In one aspect, each of the method and apparatus passing an electrical current through at least one of the base or sheet to provide controlled localized heat to the base or sheet, or to layers disposed above the base or sheet. In another aspect, the controlled localized heat is provided in combination with a process environment that can be a non-inert gas that contains an element that will become part of a compound on the base or sheet, or an inert gas that allows for the process environment to provide annealing.

Abstract: A method of filling a conductive material in a three dimensional integration structure feature formed on a surface of a wafer is disclosed. The feature is filled with a dispersion containing a plurality of conductive particles and a solvent. Then, the solvent is removed from the feature, leaving the plurality of conductive particles in the feature. These two steps are repeated until the feature is filled up with the conductive particles. Then, the conductive particles are annealed in the feature, thereby forming a dense conductive plug in the feature.

Abstract: The present invention relates to methods and apparatus for providing composition control to thin compound semiconductor films for radiation detector and photovoltaic applications. In one aspect of the invention, there is provided a method in which the molar ratio of the elements in a plurality of layers are detected so that tuning of the multi-element layer can occur to obtain the multi-element layer that has a predetermined molar ratio range. In another aspect of the invention, there is provided a method in which the thickness of a sub-layer and layers thereover of Cu, In and/or Ga are detected and tuned in order to provide tuned thicknesses that are substantially the same as pre-determined thicknesses.

Abstract: An electrode assembly includes a distribution plate having a plurality of grooves that communicate with openings in an overlying polishing pad layer. The grooves include end openings that allow for draining of process solution, both during processing and subsequent cleaning/rinsing of the pad. Drainage occurs continually during processing, cleaning and rinsing, and so is constricted through the end openings relative to the grooves, to prevent wastage. The end openings are sufficiently large, however, to substantially completely drain fluids from the grooves between steps without delaying robotic motions.

Abstract: The present invention relates to methods of preparing polycrystalline thin films of semiconductors for radiation detectors and solar cells and the films resulting therefrom. In one aspect, the present invention provides a first type of particles and a second type of particles, wherein the first type of particles have a Cu/(In+Ga) molar ratio of at least 1.38. In another aspect the present invention provides a first type of particles containing a Cu-Group IIIA alloy wherein a molar ratio of Cu to Group IIIA material within each of the particles is at least 1.38.

Abstract: The present invention relates to systems and methods for preparing metallic precursor thin films for the growth of semiconductor compounds to be used for radiation detector and solar cell fabrication. In one aspect, there is provided a method of efficiently using expensive materials necessary for the making of solar cells.

Abstract: The present invention provides methods and apparatus for deposition of contact layers for Group IBIIIAVIA solar cells using electrodeposition and/or electroless deposition approaches, and solar cells that result therefrom. In one aspect of the invention, the solar cell that results includes a substrate, a stacked contact layer that includes a bottom film coated on a surface of the substrate and a top film formed by electroplating over the bottom film, wherein the top film comprises at least one of Ru, Ir and Os. A Group IBIIIAVIA compound film formed over the top film. In another aspect of the invention, there is provided a method of depositing a stacked layer of a plurality of films in a plurality of sequentially disposed depositing units onto a continuously moving roll-to-roll sheet, preferably using electroplating of a stacked contact layer.