Patents by Inventor Bum Ho Choi
Bum Ho Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240167196Abstract: Provided are an epitaxial growth apparatus and a gas supply control module used therefor, the epitaxial growth apparatus including: a reaction chamber; a susceptor positioned in the reaction chamber and configured to seat a wafer thereon; and a gas supply control module configured to control a flow of a gas flowing into the reaction chamber, wherein the gas supply control module includes an injector including a center port corresponding to a central region of the wafer, a pair of edge ports corresponding to both edge regions of the wafer, and a pair of middle ports respectively disposed between the center port and the pair of edge ports, and a flow distribution unit configured to independently distribute the gas flow input from a source module to the ports.Type: ApplicationFiled: November 16, 2023Publication date: May 23, 2024Applicant: PJP TECH INCInventors: Bum Ho CHOI, Kyung Shin Park, Hyun Ho Kwon, Dong Hyoun Kim, Suk Ho Lim, Jong Wook Jeong, Seung Soo Lee
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Patent number: 11961720Abstract: Disclosed herein is a multi-channel device for detecting plasma at an ultra-fast speed, including: a first antenna module connected to a first output terminal in contact with a substrate on a chuck of a process chamber and extending to ground, and receiving a first leakage current leaking through the substrate to increase reception sensitivity of the leakage current; a first current detection module detecting the first leakage current; a current measurement module receiving the first leakage current output from the first current detection module, and extracting the received first leakage current for each predetermined period to generate a first leakage current measurement information; and a control module comparing the first leakage current measurement information with a reference value to generate first arcing occurrence information.Type: GrantFiled: October 12, 2021Date of Patent: April 16, 2024Assignee: T.O.S Co., Ltd.Inventors: Yong Kyu Kim, Bum Ho Choi, Yong Sik Kim, Kwang Ki Kang, Hong Jong Jung, Seok Ho Lee, Seung Soo Lee
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Publication number: 20240071071Abstract: In an embodiment an apparatus includes a processor configured to generate a feature extraction module using a dataset in which an attribute for each object is defined, receive an image obtained by a camera, extract an attribute of an object of interest from the image using the learned feature extraction module, identify an object re-identification candidate group based on the extracted attribute of the object of interest and re-identify the object of interest based on the identified object re-identification candidate group.Type: ApplicationFiled: April 13, 2023Publication date: February 29, 2024Inventors: Hyeon Seok Jung, Kyung Hwan Cho, Moon Sub Jin, Kyu Sang Choi, Bum Sub Ham, Chan Ho Eom, Geon Lee
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Patent number: 11692260Abstract: A metal-oxide electron-beam evaporation source including a variable temperature control device according to the present invention includes: a crucible configured to store a deposition material which is formed of a metal oxide and over which an electron beam is directly scanned; N heating units provided in an outer portion of the crucible, dividing the crucible into N regions, and provided for N regions, respectively; and a control unit configured to control the N heating units so that a temperature of an upper region of the crucible is maintained to be higher than that of a lower region of the crucible to reduce a temperature difference between a region over which the electron beam is scanned and a region over which the electron beam is not scanned.Type: GrantFiled: November 27, 2020Date of Patent: July 4, 2023Assignee: T.O.S. CO., LTD.Inventors: Bum Ho Choi, Seung Soo Lee, Yeong Geun Jo, Yong Sik Kim
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Patent number: 11434584Abstract: Disclosed herein is an apparatus for growing a single crystal metal-oxide epi wafer, including a reaction chamber having an internal space, a substrate mounting unit disposed in the internal space and allowing a substrate to be mounted thereon, a metal-oxide treating unit treating a metal-oxide to supply metal ions and oxygen ions generated from the metal-oxide to the substrate, and an arsenic supply unit installed to face the substrate and supplying arsenic ions to the substrate, wherein the metal-oxide treating unit includes a mount disposed to face the substrate in the internal space and allowing a zinc oxide plate which is the metal-oxide to be installed thereon, and an electron beam irradiator irradiating the zinc oxide plate with an electron beam in a direct manner to cause zinc ions and oxygen ions evaporated from the zinc oxide plate to move toward the substrate.Type: GrantFiled: November 30, 2020Date of Patent: September 6, 2022Assignee: T.O.S Co., Ltd.Inventors: Bum Ho Choi, Seung Soo Lee, Yeong Geun Jo, Yong Sik Kim
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Publication number: 20220223389Abstract: Disclosed herein is a multi-channel device for detecting plasma at an ultra-fast speed, including: a first antenna module connected to a first output terminal in contact with a substrate on a chuck of a process chamber and extending to ground, and receiving a first leakage current leaking through the substrate to increase reception sensitivity of the leakage current; a first current detection module detecting the first leakage current; a current measurement module receiving the first leakage current output from the first current detection module, and extracting the received first leakage current for each predetermined period to generate a first leakage current measurement information; and a control module comparing the first leakage current measurement information with a reference value to generate first arcing occurrence information.Type: ApplicationFiled: October 12, 2021Publication date: July 14, 2022Inventors: Yong Kyu KIM, Bum Ho CHOI, Yong Sik KIM, Kwang ki KANG, Hong Jong JUNG, Seok Ho LEE, Seung Soo LEE
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Publication number: 20210310153Abstract: Disclosed herein is a separate chamber type epi-growth apparatus including a reaction chamber having a growth space, a substrate mounting unit disposed in the growth space and allowing a substrate to be mounted thereon, a metal oxide treating unit treating a metal oxide in a space independent from the growth space so that metal ions and oxygen ions generated from the metal oxide are supplied to the substrate, an arsenic supply unit installed to face the substrate and supplying arsenic ions to the substrate, an oxygen radical supply unit installed to face the substrate, dissociating oxygen molecules in a gaseous state, and supplying oxygen radicals to the substrate, and a vacuum control unit independently controlling a vacuum state of the reaction chamber and the metal oxide treating unit.Type: ApplicationFiled: November 30, 2020Publication date: October 7, 2021Inventors: Bum Ho CHOI, Seung Soo LEE, Yeong Geun JO, Yong Sik KIM
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Publication number: 20210285128Abstract: Disclosed herein is an apparatus for growing a single crystal metal-oxide epi wafer, including a reaction chamber having an internal space, a substrate mounting unit disposed in the internal space and allowing a substrate to be mounted thereon, a metal-oxide treating unit treating a metal-oxide to supply metal ions and oxygen ions generated from the metal-oxide to the substrate, and an arsenic supply unit installed to face the substrate and supplying arsenic ions to the substrate, wherein the metal-oxide treating unit includes a mount disposed to face the substrate in the internal space and allowing a zinc oxide plate which is the metal-oxide to be installed thereon, and an electron beam irradiator irradiating the zinc oxide plate with an electron beam in a direct manner to cause zinc ions and oxygen ions evaporated from the zinc oxide plate to move toward the substrate.Type: ApplicationFiled: November 30, 2020Publication date: September 16, 2021Inventors: Bum Ho CHOI, Seung Soo LEE, Yeong Geun JO, Yong Sik KIM
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Publication number: 20210285088Abstract: A metal-oxide electron-beam evaporation source including a variable temperature control device according to the present invention includes: a crucible configured to store a deposition material which is formed of a metal oxide and over which an electron beam is directly scanned; N heating units provided in an outer portion of the crucible, dividing the crucible into N regions, and provided for N regions, respectively; and a control unit configured to control the N heating units so that a temperature of an upper region of the crucible is maintained to be higher than that of a lower region of the crucible to reduce a temperature difference between a region over which the electron beam is scanned and a region over which the electron beam is not scanned.Type: ApplicationFiled: November 27, 2020Publication date: September 16, 2021Inventors: Bum Ho CHOI, Seung Soo LEE, Yeong Geun JO, Yong Sik KIM
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Patent number: 9640776Abstract: The present inventions relates to an organic light emitting device capable of decreasing a leakage current, and more particularly, to an organic light emitting device manufacturing method and an organic light emitting device using the same, which can decrease a leakage current, by flattening a lower electrode in order to decrease a leakage current of the lower electrode deposited through a shadow mask.Type: GrantFiled: January 14, 2014Date of Patent: May 2, 2017Assignee: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGYInventors: Bum Ho Choi, Jong Ho Lee
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Publication number: 20170056912Abstract: Disclosed is a liquid precursor delivery system that enables a thin film deposition process to be performed at a low temperature like 350° C. or lower in a process of manufacturing semiconductor devices or displays. The liquid precursor delivery system includes an aerosol generator, a vaporizer, and a vapor storage tank. The aerosol generator changes a liquid precursor into an aerosol precursor using ultrasonic vibrations. The vaporizer has a heater block in which a plurality of sloped plate-shaped heaters is arranged in a zigzag form and in which the aerosol precursor changes into a gas precursor by colliding with the heaters and thus obtaining heat energy. The vapor storage tank stores the gas precursor while maintaining a constant pressure and temperature of the gas precursor and delivers the gas precursor to a process chamber when a thin film deposition process is performed.Type: ApplicationFiled: December 30, 2014Publication date: March 2, 2017Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGYInventors: Bum Ho CHOI, Jong Ho LEE
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Publication number: 20150364714Abstract: The present inventions relates to an organic light emitting device capable of decreasing a leakage current, and more particularly, to an organic light emitting device manufacturing method and an organic light emitting device using the same, which can decrease a leakage current, by flattening a lower electrode in order to decrease a leakage current of the lower electrode deposited through a shadow mask.Type: ApplicationFiled: January 14, 2014Publication date: December 17, 2015Inventors: Bum Ho CHOI, Jong Ho LEE
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Patent number: 8110990Abstract: Disclosed is an atmospheric pressure plasma apparatus for enhancing and or controlling the dissociation of a secondary gas by converting a source gas into a plasma state at atmospheric pressure and controlling the interaction between that plasma and the secondary gas using porous metal, and ceramic tubes to create a path having controllable isolation from the region where plasma is generated.Type: GrantFiled: December 9, 2008Date of Patent: February 7, 2012Assignees: Korea Institute of Industrial Technology, Board of Regents, The University of Texas SystemInventors: Bum Ho Choi, Jong Ho Lee, Jung Chan Bae, Yong-Seok Park, Chun-Seong Park, Woo Sam Kim, Gil Sik Lee, Lawrence John Overzet, Byeong Jun Lee
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Publication number: 20100033096Abstract: Disclosed is an atmospheric pressure plasma apparatus for enhancing and or controlling the dissociation of a secondary gas by converting a source gas into a plasma state at atmospheric pressure and controlling the interaction between that plasma and the secondary gas using porous metal, and ceramic tubes to create a path having controllable isolation from the region where plasma is generated.Type: ApplicationFiled: December 9, 2008Publication date: February 11, 2010Applicants: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY, BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEMInventors: Bum Ho Choi, Jong Ho Lee, Jung Chan Bae, Yong-Seok Park, Chun-Seong Park, Woo Sam Kim, Gil Sik Lee, Lawrence John Overzet, Byeong Jun Lee