Abstract: Provided are an epitaxial growth apparatus and a gas supply control module used therefor, the epitaxial growth apparatus including: a reaction chamber; a susceptor positioned in the reaction chamber and configured to seat a wafer thereon; and a gas supply control module configured to control a flow of a gas flowing into the reaction chamber, wherein the gas supply control module includes an injector including a center port corresponding to a central region of the wafer, a pair of edge ports corresponding to both edge regions of the wafer, and a pair of middle ports respectively disposed between the center port and the pair of edge ports, and a flow distribution unit configured to independently distribute the gas flow input from a source module to the ports.

Abstract: A method and an apparatus are disclosed for video coding using improved cross-component linear model (CCLM) prediction. The video coding method and the apparatus generate a first predictor of a current chroma block according to CCLM prediction, and additionally generate a second predictor of the current chroma block based on the neighboring pixels of the current chroma block in intra prediction of the current chroma block. The video coding method and the apparatus perform weighted combination on the first predictor and the second predictor.

Abstract: A video encoding method and a video decoding method are provided for adaptively determining a chroma intra-directional prediction mode. When a DM mode is applied for intra prediction of a chroma signal, the video encoding method and the video decoding method adaptively modify the directional mode of a luma block to conform to the characteristics of a chroma block by considering the position and size of the chroma block, the presence of reference samples, and the size of the luma block. The video encoding method and the video decoding method use the modified directional mode for intra prediction of the chroma signal.

Abstract: The present invention provides a method for forming bumps of a semiconductor package to suppress a final height difference between main bumps and support bumps that is caused by a height difference between areas of an underlying layer when viewed on a cross-section. The method may include forming first seed layer patterns and second seed layer patterns which are disposed in the areas and are separated from each other, over the underlying layer having the height difference. The method may include forming the main bumps and the support bumps of which final heights are the same when viewed on the cross-section in the areas, by performing electroplating through using, as electrodes, the first seed layer patterns and the second seed layer patterns which are disposed in the areas and are separated from each other, under different conditions in the areas.

Abstract: The present invention provides a method for forming bumps of a semiconductor package to suppress a final height difference between main bumps and support bumps that is caused by a height difference between areas of an underlying layer when viewed on a cross-section. The method may include forming first seed layer patterns and second seed layer patterns which are disposed in the areas and are separated from each other, over the underlying layer having the height difference. The method may include forming the main bumps and the support bumps of which final heights are the same when viewed on the cross-section in the areas, by performing electroplating through using, as electrodes, the first seed layer patterns and the second seed layer patterns which are disposed in the areas and are separated from each other, under different conditions in the areas.

Abstract: A multi-chip package is presented which includes a substrate, a lower semiconductor, an upper semiconductor chip, metal wires, an encapsulant, and mounting units. The substrate has electrode terminals on an upper surface and ball lands on a lower surface. The lower semiconductor chip is placed face-down on the substrate. The lower semiconductor chip has first bonding pads, first connectors and metal patterns. The upper semiconductor chip is placed face-down type on the back surface of the lower semiconductor chip. The upper semiconductor has second bonding pads and second connectors. The metal wires electrically the lower semiconductor chip to the substrate. The encapsulant seals the substrate, the lower semiconductor chip, the upper semiconductor chip and the metal wires. The mounting units are on the lower surface of the substrate.

Abstract: A multi-chip package is presented which includes a substrate, a lower semiconductor, an upper semiconductor chip, metal wires, an encapsulant, and mounting units. The substrate has electrode terminals on an upper surface and ball lands on a lower surface. The lower semiconductor chip is placed face-down on the substrate. The lower semiconductor chip has first bonding pads, first connectors and metal patterns. The upper semiconductor chip is placed face-down type on the back surface of the lower semiconductor chip. The upper semiconductor has second bonding pads and second connectors. The metal wires electrically the lower semiconductor chip to the substrate. The encapsulant seals the substrate, the lower semiconductor chip, the upper semiconductor chip and the metal wires. The mounting units are on the lower surface of the substrate.

Abstract: An automatic wire bonder including a lead frame provided with N number of bonding sites, N being a positive integer; a window clamper for clamping the lead frame and for exposing M number of bonding sites, M being a positive integer; K number of cameras for obtaining images of dies and portions of the lead frame located in the exposed bonding sites, K being a positive integer; a microprocessor for calculating bonding points of the dies and the lead frame based on the obtained images; and a capillary for automatically wire bonding the chips based on the calculated bonding points. Each of the bonding sites has a die pad at a center portion thereof to attach a die and a number of leads at a peripheral portion of the bonding site. In the automatic wire bonder, the lead frame is fed into a space between the window clamp and the heater block by the M pitches at once in such a way that M numbers of bonding sites are aligned with the working areas.