Abstract: An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.

Abstract: A method of processing and mass-producing green whole greens, comprising: a blanching step of discharging the green whole grains stored in the storage tank and steaming the discharged green whole grains for 30 to 120 seconds with water or steam at a temperature ranging from 88 to 102° C.; a cooling step of rapidly cooling the green whole grains which have undergone the blanching step at a temperature ranging from 1 to 7° C.; a cold air dehumidifying step of blowing air to the green whole grains cooled to a low temperature through the cooling step to remove excessive moisture permeated into surfaces of the green whole grains; and a hot air drying step of applying hot air of a low temperature ranging from 35 to 50° C. to the green whole grains from which the excessive moisture has been removed through the cold air dehumidifying step to dry the green whole grains.