Abstract: Provided are a method for fabricating a human nasal turbinate-derived mesenchymal stem cell-based 3D bioprinted construct, and a use thereof, wherein the human nasal turbinate-derived mesenchymal stem cell-based, 3D bioprinted construct is advantageous over conventional mesenchymal stem cell-based, 3D bioprinted constructs in that the former can survive and proliferate stably in vitro and/or in vivo and shows high osteogenic differentiation ability as well, therefore is expected to make a great contribution to the practical use of cellular therapeutic agents.

Abstract: A liquefied gas storage tank includes a corner block disposed on a corner portion, wherein the corner block includes a lower block, an upper block and an upper connecting block, the upper block includes a first inner fixing unit and a second inner fixing unit respectively provided inside a first surface and a second surface, bonded and connected to a secondary barrier, and each having a structure in which a primary inner plywood, a primary corner insulating material, and a primary outer plywood are stacked, and an inner bent portion installed at a corner spatial portion between the first inner fixing unit and the second inner fixing unit, and both side surfaces of the inner bent portion that are perpendicular to the secondary barrier each have a height reduced from a total height of each of the first and second inner fixing units.

Abstract: Provided are a method for fabricating a human nasal turbinate-derived mesenchymal stem cell-based 3D bioprinted construct, and a use thereof, wherein the human nasal turbinate-derived mesenchymal stem cell-based, 3D bioprinted construct is advantageous over conventional mesenchymal stem cell-based, 3D bioprinted constructs in that the former can survive and proliferate stably in vitro and/or in vivo and shows high osteogenic differentiation ability as well, therefore is expected to make a great contribution to the practical use of cellular therapeutic agents.

Abstract: The liquefied gas storage tank includes a primary barrier, a primary insulation wall, a secondary barrier, and a secondary insulation wall. In a state where unit elements are arranged adjacent to each other, each of the unit elements being formed by stacking the secondary insulation wall, the secondary barrier, and a fixed insulation wall which is a part of the primary insulation wall, the primary insulation wall may comprise: a connection insulation wall provided in the space between the adjacent fixed insulation walls; first slits formed between the fixed insulation walls and the connection insulation wall when the connection insulation wall is inserted and installed between the adjacent fixed insulation walls; a plurality of second slits formed in a lengthwise direction and a widthwise direction of the fixed insulation walls; and a first insulating filler material for filling the first slits.

Abstract: A package-on-package (PoP) semiconductor package includes an upper package and a lower package. The lower package includes a first semiconductor device in a first area, a second semiconductor device in a second area, and a command-and-address vertical interconnection, a data input-output vertical interconnection, and a memory management vertical interconnection adjacent to the first area.

Abstract: A package-on-package (PoP) semiconductor package includes an upper package and a lower package. The lower package includes a first semiconductor device in a first area, a second semiconductor device in a second area, and a command-and-address vertical interconnection, a data input-output vertical interconnection, and a memory management vertical interconnection adjacent to the first area.

Abstract: A package-on-package (PoP) semiconductor package includes an upper package and a lower package. The lower package includes a first semiconductor device in a first area, a second semiconductor device in a second area, and a command-and-address vertical interconnection, a data input-output vertical interconnection, and a memory management vertical interconnection adjacent to the first area.

Abstract: A package-on-package (PoP) semiconductor package includes an upper package and a lower package. The lower package includes a first semiconductor device in a first area, a second semiconductor device in a second area, and a command-and-address vertical interconnection, a data input-output vertical interconnection, and a memory management vertical interconnection adjacent to the first area.

Abstract: A package-on-package (PoP) semiconductor package includes an upper package and a lower package. The lower package includes a first semiconductor device in a first area, a second semiconductor device in a second area, and a command-and-address vertical interconnection, a data input-output vertical interconnection, and a memory management vertical interconnection adjacent to the first area.

Abstract: A package-on-package (PoP) semiconductor package includes an upper package and a lower package. The lower package includes a first semiconductor device in a first area, a second semiconductor device in a second area, and a command-and-address vertical interconnection, a data input-output vertical interconnection, and a memory management vertical interconnection adjacent to the first area.

Abstract: In a method of manufacturing a stack package, a first semiconductor chip is formed on a first package substrate. A second semiconductor chip is formed on a second package substrate. A plurality of signal pads and a thermal diffusion member are formed on a lower surface and/or an upper surface of an interposer substrate, the signal pad having a first height and the thermal diffusion member having a second height greater than the first height. The first package substrate, the interposer substrate, and the second package substrate are sequentially stacked on one another such that the thermal diffusion member is in contact with an upper surface of the first semiconductor chip or a lower surface of the second package substrate.

Abstract: A package-on-package (PoP) semiconductor package includes an upper package and a lower package. The lower package includes a first semiconductor device in a first area, a second semiconductor device in a second area, and a command-and-address vertical interconnection, a data input-output vertical interconnection, and a memory management vertical interconnection adjacent to the first area.

Abstract: In a method of manufacturing a stack package, a first semiconductor chip is formed on a first package substrate. A second semiconductor chip is formed on a second package substrate. A plurality of signal pads and a thermal diffusion member are formed on a lower surface and/or an upper surface of an interposer substrate, the signal pad having a first height and the thermal diffusion member having a second height greater than the first height. The first package substrate, the interposer substrate, and the second package substrate are sequentially stacked on one another such that the thermal diffusion member is in contact with an upper surface of the first semiconductor chip or a lower surface of the second package substrate.

Abstract: A semiconductor package includes a printed circuit board (PCB), a chip bonded to the PCB, a mold protecting the chip and exposing a backside surface of the chip, via openings extending in the mold to expose first contacts bonded to the PCB, and at least one first marking inscribed in a marking region of the mold between the backside surface of the chip and the vias. The mold has an exposed molded underfill (eMUF) structure covering the sides of the chip while exposing the backside surface of the chip. A PoP package includes a top package stacked on and electrically connected to the semiconductor package.

Abstract: A semiconductor package including a mounting substrate, a first semiconductor chip mounted on an upper surface of the mounting substrate, a unit package stacked on the first semiconductor chip may be provided. The unit package includes a package substrate and a second semiconductor chip mounted on the package substrate. A plurality of bonding wires connects bonding pads of the mounting substrate and connection pads of the unit package, thereby electrically connecting the first and second semiconductor chips to each other. A molding member is provided on the mounting substrate to cover the first semiconductor chip and the unit package.

Abstract: A semiconductor package includes a printed circuit board (PCB), a chip bonded to the PCB, a mold protecting the chip and exposing a backside surface of the chip, via openings extending in the mold to expose first contacts bonded to the PCB, and at least one first marking inscribed in a marking region of the mold between the backside surface of the chip and the vias. The mold has an exposed molded underfill (eMUF) structure covering the sides of the chip while exposing the backside surface of the chip. A PoP package includes a top package stacked on and electrically connected to the semiconductor package.

Abstract: A semiconductor package onto which a plurality of passive elements is mounted. A substrate includes a first surface and a second surface. A semiconductor chip is on one of the first surface and the second surface of the substrate. A plurality of passive elements are on the substrate. The plurality of passive elements include a plurality of first passive elements and a plurality of second passive elements that are taller than the plurality of first passive elements. The plurality of first passive elements are on at least one of the first surface and the second surface, and at least two of the plurality of second passive elements are on the second surface.

Abstract: A semiconductor package including a mounting substrate, a first semiconductor chip mounted on an upper surface of the mounting substrate, a unit package stacked on the first semiconductor chip may be provided. The unit package includes a package substrate and a second semiconductor chip mounted on the package substrate. A plurality of bonding wires connects bonding pads of the mounting substrate and connection pads of the unit package, thereby electrically connecting the first and second semiconductor chips to each other. A molding member is provided on the mounting substrate to cover the first semiconductor chip and the unit package.

Abstract: A package on package structure includes a lower package and an upper package. The lower package includes a first semiconductor chip disposed in a chip region of an upper surface of a first substrate. The upper package includes a second semiconductor chip disposed on an upper surface of a second substrate, and a decoupling capacitor disposed in an outer region of a lower surface of the second substrate. The lower surface of the second substrate opposes the upper surface of the second substrate and faces the upper surface of the first substrate. The plane area of the second substrate is larger than the plane area of the first substrate. The outer region of the lower surface of the second substrate extends beyond a periphery of the first substrate.

Abstract: A package on package structure includes a lower package and an upper package. The lower package includes a first semiconductor chip disposed in a chip region of an upper surface of a first substrate. The upper package includes a second semiconductor chip disposed on an upper surface of a second substrate, and a decoupling capacitor disposed in an outer region of a lower surface of the second substrate. The lower surface of the second substrate opposes the upper surface of the second substrate and faces the upper surface of the first substrate. The plane area of the second substrate is larger than the plane area of the first substrate. The outer region of the lower surface of the second substrate extends beyond a periphery of the first substrate.