Abstract: A display assembly includes a display device having an upper surface on which an image is output, and a lens device detachably connected to the upper surface of the display device. The lens device includes a lens panel that refracts the image from the display device, and a connection layer disposed on a lower surface of the lens panel facing the display device and detachably connected to the upper surface of the display device. The upper surface of the display device includes first contact interfaces, and the connection layer includes second contact interfaces detachably connected to the first contact interfaces.

Abstract: A hydrogen supply method includes a two-side heat exchange mode in which both introducing a second fluid into a hydrogen storage part after the second fluid exchanges heat with a first fluid in a second heat exchanger in a state in which a compressor is driven to compress the first fluid and introducing the second fluid into the hydrogen storage part after the second fluid is heated or cooled in a thermal device are performed. The method also includes a one-side heat exchange mode in which one of introducing the second fluid into the hydrogen storage part after the second fluid exchanges heat with the first fluid in the second heat exchanger in a state in which the compressor is driven to compress the first fluid and introducing the second fluid into the hydrogen storage part after the second fluid is heated or cooled in the thermal device is performed.

Abstract: Disclosed is a method for patterning a chemical amplified photoresist which improves resolution by adjusting a diffusion direction of photo acid. The method for patterning a chemical amplified photoresist includes the steps of depositing a chemical amplified photoresist on an etching target layer, selectively exposing the chemical amplified photoresist to generate photo acid on a surface of the exposed chemical amplified photoresist, diffusing the photo acid in only one direction by performing PEB process on condition that electric field is applied to the chemical amplified photoresist, and patterning the chemical amplified photoresist by developing process to remove only a portion where the photo acid is diffused.

Abstract: A method for etching a semiconductor device suitable for forming micron contact hole having a size of less than limit resolution power of exposure equipments is disclosed, including coating a layer for an etch mask on an etched object layer; selectively patterning the layer to form an open area; and swelling side part of the patterned layer and forming the etch mask.

Abstract: Phase-shifting mask which minimizes thickness and phase variations of a phase-shifting layer, and the method for manufacturing the same, the phase-shifting mask including a transparent substrate, a plurality of light-shielding layers formed in the transparent substrate; and a plurality of phase-shifting layers each formed on the transparent substrate between the light-shielding layers; and the method including the steps of providing a transparent substrate, defining transparent regions and light-shielding regions so as to form a plurality of trenches, channels or recesses in each of the light-shielding regions of the transparent substrate, forming each of a plurality of light-shielding layers in each of the plurality of trenches, channels or recesses, and forming a phase-shifting layer on the transparent substrate at least between a pair of the light-shielding layers.

Abstract: A sputtering deposition apparatus and method wherein a deposition material is sputtered from a target, the sputtered deposition material is ionized, and a thin film of the ionized deposition material is deposited onto a wafer.