Abstract: Provided is a side storage unit, including a cleaning chamber to receive a plurality of substrates, the cleaning chamber having a gas supplier to supply therethrough cleaning gases for removing fumes from the substrate, and a plurality of discharge openings to discharge therethrough a mixture of the fumes and the cleaning gases; a plurality of substrate holders arranged on an inner sidewall of the cleaning chamber and supporting the substrates in the cleaning chamber, each of the substrate holders having at least one gas injector connected to the gas supplier to supply the cleaning gases onto a surface of the substrate; and a discharge assembly connected to the discharge openings to discharge the mixture of the fumes and the cleaning gases.

Abstract: An end point detection window prevents process failures in a plasma etching device. The end point detection window has a body of aluminum or an aluminum alloy through which a hole extends to provide a path along which light generated during the etching process can pass from the process chamber, and a capping section coupled to a light outlet of the body. The capping section is of quartz for allowing the light passing through the hole in the body to be transmitted out of the process chamber.

Abstract: An apparatus for processing a semiconductor wafer has a circular chuck and a focus ring. The chuck is located in a process chamber and holds the semiconductor wafer. The focus ring surrounds the semiconductor wafer held by the chuck and focuses processing gases or plasma on a surface of the semiconductor wafer. The focus ring has a stepped inner periphery formed by a cylindrical lower surface surrounding the wafer and having a first diameter, a cylindrical upper surface having a second diameter greater than the first diameter, and a collector interposed between the lower surface and the upper surface for collecting contaminants created at the upper surface due to a reaction between the processing media and the material of the focus ring. The collector collects particulate contaminants falling from the upper surface of the focus ring so that the contaminants do not reach the wafer.

Abstract: An end point detection window prevents process failures in a plasma etching device. The end point detection window has a body of aluminum or an aluminum alloy through which a hole extends to provide a path along which light generated during the etching process can pass from the process chamber, and a capping section coupled to a light outlet of the body. The capping section is of quartz for allowing the light passing through the hole in the body to be transmitted out of the process chamber.

Abstract: An induction magnet for use in semiconductor device manufacturing equipment is formed of an insulating magnetic material. The semiconductor device manufacturing equipment may include a reaction chamber having a plasma region in which plasma is produced, a substrate support disposed in the reaction chamber, a gas supplier that sprays reaction gas uniformly towards the substrate support, and a power supply for supplying a high frequency that excites the reaction gas to produce plasma in the plasma region. The induction magnet is disposed around the plasma region at the outside of the reaction chamber. Because of the composition of the induction magnet, the semiconductor manufacturing equipment does not overheat even though power having a high frequency is applied to the induction magnet. As a result, the semiconductor device manufacturing equipment can perform a manufacturing process with a high degree of productivity.

Abstract: A gas injector is designed to better withstand the conditions inside a semiconductor manufacturing apparatus, such as a plasma etching apparatus. The gas injector includes a body in the form of a block of ceramic material, and a gas injection section formed by first and second gas injection holes extending through the block of ceramic material. The block of ceramic material has a first cylindrical portion and a second cylindrical portion extending from the first cylindrical portion. The first cylindrical portion is wider and longer than the second cylindrical portion. The first holes of the gas injecting section extend through the first cylindrical portion of the block of ceramic material, whereas the second holes extend through the second cylindrical portion contiguously each from a respective one of the first holes and concentric therewith. The first holes are also wider and longer than the second holes. The gas injector is disposed at an upper portion of a plasma etching apparatus.

Abstract: A multiple reaction chamber system includes a transfer chamber, a load lock chamber connected to the transfer chamber, and a plurality of reaction chambers connected to the transfer chamber. An alignment chamber is connected to the transfer chamber, disposed along a path of wafer transfer from the load lock chamber to the plurality of reaction chambers, and includes a wafer aligner. A wafer recognition, disposed along a post-aligner portion of the path of wafer transfer system, recognizes an identification code of an individual wafer. A controlling system is in data communication with the wafer recognition system for selecting a selected chamber of the plurality of reaction chambers into which the individual wafer is to be transferred. Because individual wafers can be associated with each reaction chamber, a defective reaction chamber can be identified immediately and its use discontinued so that unproductive operations can be eliminated.