Abstract: An integrated circuit using silicon-on-insulator (SOI) has most of its transistors with their channels (bodies) floating. Some of the transistors, however, must have their channels coupled to a predetermined bias in order to achieve desired operating characteristics. In order to achieve the needed bias, a contact path is provided in the semiconductor layer of the SOI substrate and under an extension of the gate of the transistor. The extension is separated from the semiconductor layer by an insulator that is thicker than that for most of the transistor but advantageously is the same as that used for some of the thick gate insulator devices used, typically, for high voltage applications. This thicker insulator advantageously reduces the capacitance, but does not increase process complexity because it uses an insulator already required by the process.

Abstract: An integrated circuit using silicon-on-insulator (SOI) has most of its transistors with their channels (bodies) floating. Some of the transistors, however, must have their channels coupled to a predetermined bias in order to achieve desired operating characteristics. In order to achieve the needed bias, a contact path is provided in the semiconductor layer of the SOI substrate and under an extension of the gate of the transistor. The extension is separated from the semiconductor layer by an insulator that is thicker than that for most of the transistor but advantageously is the same as that used for some of the thick gate insulator devices used, typically, for high voltage applications. This thicker insulator advantageously reduces the capacitance, but does not increase process complexity because it uses an insulator already required by the process.

Abstract: A doped area is formed in the silicon substrate layer of a silicon-on-insulator stack including a silicon substrate, an insulator layer and an silicon active layer, by implanting a species through at least the insulator layer. In one embodiment, the silicon active layer is etched and the species are implanted in the silicon substrate through the exposed insulator layer. Thus, a doped region is formed in the silicon substrate under the areas where the silicon active layer was removed. In another embodiment after etching the silicon active layer, a dielectric layer is formed adjacent to the silicon active layer and on the insulator layer. In this embodiment, the species are implanted over the entire wafer through both the silicon active layer and the insulator layer. In both embodiments, the species are implanted before forming a gate electrode of a transistor.

Abstract: An automatic picture quality compensating method and apparatus employs a fuzzy theory to entirely analyze three components of brightness and sharpness of the picture image and signal-to-noise ratio in order to achieve an optimal profile compensation of the picture image. The method and system are defined such that the brightness is controlled by using the luminance signal level of the picture image, and the sharpness of the picture quality is controlled by using the vertical correlativity of the luminance signal. In addition, the S/N ratio can be improved by using the envelope of the video signal.

Abstract: An automatic monitoring method for a video cassette recorder permits an automatic monitoring function to be added to a conventional data processing function provide by a VCR microcomputer. When the user selects an automatic monitoring function by a remote controller, automatic monitoring of a television broadcast is made possible during predetermined intervals under the control of the microcomputer during reproduction of a video cassette tape. Thus, the troublesome procedure of repeatedly manipulating a remote controller key is eliminated so that television broadcast monitoring can be carried out if the user forgets to press the key.