Abstract: A method of depositing an atomic layer is provided. The method includes a plurality of deposition cycles. Each of the plurality of deposition cycles includes rotating a valve plate included in an exhaust port by a first angle while supplying a precursor to a chamber into which a substrate is loaded, rotating the valve plate by a second angle while supplying a purge gas to the chamber, rotating the valve plate by a third angle while supplying a reactor to the chamber, and rotating the valve plate by the second angle while supplying the purge gas to the chamber, and wherein the first angle, the second angle, and the third angle are certain angles between an upper surface of the valve plate and a virtual plane vertical to an internal path of the exhaust port, and the first angle differs from the third angle.

Abstract: A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.

Abstract: A gas supply for a layer deposition apparatus including a plurality of charge distribution lines connected to a first gas supply source and a plurality of gas filling tanks respectively connected to the charge distribution lines is disclosed. Each of the gas filling tanks may be pressurized with a first gas from the first gas supply source, and a gas supply line connected to a second gas supply source. The apparatus may include a multi-dosing valve assembly connected to outlet portions of the gas filling tanks and configured to supply, sequentially, the first gas from the gas filling tanks to a process chamber. The multi-dosing valve assembly may include a flow path block having a main supply line connected to the process chamber and a backflow prevention valve block fastened to the flow path block and having an opening/closing valve therein.

Abstract: A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.

Abstract: A gas supply for a layer deposition apparatus including a plurality of charge distribution lines connected to a first gas supply source and a plurality of gas filling tanks respectively connected to the charge distribution lines is disclosed. Each of the gas filling tanks may be pressurized with a first gas from the first gas supply source, and a gas supply line connected to a second gas supply source. The apparatus may include a multi-dosing valve assembly connected to outlet portions of the gas filling tanks and configured to supply, sequentially, the first gas from the gas filling tanks to a process chamber. The multi-dosing valve assembly may include a flow path block having a main supply line connected to the process chamber and a backflow prevention valve block fastened to the flow path block and having an opening/closing valve therein.