Abstract: Provided is a method for recovering high-concentration and high-purity amine from amine-containing waste water generated from nuclear power plants and thermal power plants. The method includes: capturing amine and concentrating waste water using a cation exchange resin; separating amine from the concentrated amine-containing waste water; and carrying out further separation of amine via distillation. The method may be applied to treat amine, which causes an increase in biochemical oxygen demand (BOD) and total nitrogen concentration, drastically at the time of its generation from waste water of nuclear power plants and thermal power plants. In this manner, the method may prevent an increase in load of existing waste water treating plants and avoid a need for modifying the equipment in the existing plants.

Abstract: A method is described for making at least one MOS transistor on a silicon substrate. According to this method, a layer of a silicon dioxide material is formed on a principal surface of the substrate. The oxide layer is then patterned such that at least one source region and at least one drain region of the substrate are exposed. A layer of boron-doped germanium is then deposited on the exposed regions by RTCVD. The substrate is then heated such that boron diffuses from the germanium layer into the source and drain regions. The substrate principal surface can then be etched such that the germanium layer is removed with high selectivity.