Patents by Inventor Byung-Hoon NA
Byung-Hoon NA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9190545Abstract: An optical device is provided including an active layer having two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. A thickness of the first quantum well layer and a thickness of the third quantum well layer are each different from a thickness of the second quantum well layer. Also, an energy level of the first quantum well layer and an energy level of the third quantum well layer are each different from an energy level of the second quantum well layer.Type: GrantFiled: May 21, 2014Date of Patent: November 17, 2015Assignees: SAMSUNG ELECTRONICS CO., LTD., GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Yong-chul Cho, Yong-tak Lee, Chang-young Park, Byung-hoon Na, Yong-hwa Park, Gun-wu Ju
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Patent number: 9082909Abstract: Provided is an optical device which includes an active layer which includes at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers. Each of the at least one coupled quantum well includes at least three quantum well layers and at least two coupling barriers interposed between the at least three quantum layers. The at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers.Type: GrantFiled: January 6, 2014Date of Patent: July 14, 2015Assignees: SAMSUNG ELECTRONICS CO., LTD., GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Yong-chul Cho, Yong-tak Lee, Chang-young Park, Byung-hoon Na, Yong-hwa Park, Gun-wu Ju, Hee-ju Chio
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Patent number: 9051178Abstract: A transmissive light modulator including a first reflection layer; a first active layer, arranged on the first reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; a second reflection layer arranged on the first active layer; a second active layer, arranged on the second reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; and a third reflection layer arranged on the second active layer, wherein the first reflection layer and the third reflection layer are each doped with a first type dopant, and the second reflection layer is doped with a second type dopant, which is electrically opposite to the first type dopant.Type: GrantFiled: September 14, 2012Date of Patent: June 9, 2015Assignees: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-chul Cho, Yong-tak Lee, Jang-woo You, Byung-hoon Na, Yong-hwa Park, Chang-young Park, Hee-ju Chio, Gun-wu Ju
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Publication number: 20150153628Abstract: An optical modulator includes: a bottom reflective layer; an active layer which is disposed on the bottom reflective layer and includes a multiple quantum well layer; and a top reflective layer which is disposed on the active layer, the top reflective layer including a first top reflective layer which is disposed on the active layer, a first cavity layer which is disposed on the first top reflective layer, a second top reflective layer which is disposed on the first cavity layer, a second cavity layer which is disposed on the second top reflective layer, and a third top reflective layer which is disposed on the second cavity layer. When a center wavelength of an incident light to be modulated is ?, the active layer and the first and second cavity layers have an optical thickness that is an integer multiple of ?/2 to provide an individual resonant cavity.Type: ApplicationFiled: February 12, 2015Publication date: June 4, 2015Applicants: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-Chul CHO, Yong-Tak LEE, Yong-Hwa PARK, Byung-Hoon NA
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Publication number: 20150138620Abstract: A transmissive image modulator for allowing image modulation over a wide bandwidth with multiple Fabry-Perot resonant modes and multiple absorption modes is provided. The transmissive image modulator includes a lower reflection layer; an active layer disposed on the lower reflection layer, including multiple quantum well layers and multiple barrier layers; an upper reflection layer disposed on the active layer; and at least one micro-cavity layer disposed in at least one of the lower and upper reflection layer. The active layer and the at least one micro-cavity layer have thicknesses of a multiple of ?/2, where ? is a resonant wavelength.Type: ApplicationFiled: December 16, 2014Publication date: May 21, 2015Applicants: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-chul CHO, Yong-tak LEE, Byung-hoon NA, Chang-young PARK, Yong-hwa PARK, Jang-woo YOU, Hee-ju CHOI
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Publication number: 20150123077Abstract: An optical device is provided including an active layer having two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. A thickness of the first quantum well layer and a thickness of the third quantum well layer are each different from a thickness of the second quantum well layer. Also, an energy level of the first quantum well layer and an energy level of the third quantum well layer are each different from an energy level of the second quantum well layer.Type: ApplicationFiled: May 21, 2014Publication date: May 7, 2015Applicants: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-chul CHO, Yong-tak LEE, Chang-young PARK, Byung-hoon NA, Yong-hwa PARK, Gun-wu JU
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Publication number: 20140191196Abstract: Provided is an optical device which includes an active layer which includes at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers. Each of the at least one coupled quantum well includes at least three quantum well layers and at least two coupling barriers interposed between the at least three quantum layers. The at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers.Type: ApplicationFiled: January 6, 2014Publication date: July 10, 2014Applicants: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-chul CHO, Yong-tak LEE, Chang-young PARK, Byung-hoon NA, Yong-hwa PARK, Gun-wu JU, Hee-ju CHIO
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Patent number: 8492863Abstract: Optical modulator having wide bandwidth based on Fabry-Perot resonant reflection is disclosed. The optical modulator includes: a bottom Distributed Bragg Reflector (DBR) layer; a top DBR layer including at least one layer, and a modified layer; and an active layer disposed between bottom and top DBR layers, wherein the at least one layer includes at least one pair of a first refractive index layer having a first refractive index and a second refractive index layer having a second refractive index, the modified layer includes at least one pair of a third refractive index layer having a third refractive index and a fourth refractive index layer having a fourth refractive index, the third and the fourth refractive indexes being different, and at least one of the third and the fourth refractive index layers has a second optical thickness that is not ?/4 or that is not an odd multiple thereof.Type: GrantFiled: November 2, 2010Date of Patent: July 23, 2013Assignees: Samsung Electronics Co., Ltd., Gwangju Institute of Science and TechnologyInventors: Yong-chul Cho, Yong-tak Lee, Yong-hwa Park, Byung-hoon Na, Kwang-mo Park, Chang-soo Park
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Publication number: 20130175500Abstract: A transmissive light modulator including a first reflection layer; a first active layer, arranged on the first reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; a second reflection layer arranged on the first active layer; a second active layer, arranged on the second reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; and a third reflection layer arranged on the second active layer, wherein the first reflection layer and the third reflection layer are each doped with a first type dopant, and the second reflection layer is doped with a second type dopant, which is electrically opposite to the first type dopant.Type: ApplicationFiled: September 14, 2012Publication date: July 11, 2013Applicants: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-chul CHO, Yong-tak LEE, Jang-woo YOU, Byung-hoon NA, Yong-hwa PARK, Chang-young PARK, Hee-ju CHIO, Gun-wu JU
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Patent number: 8432599Abstract: An optical image modulator and a method of manufacturing the same. The optical image modulator includes a substrate, an N electrode contact layer formed on the substrate, a lower distributed Bragg reflection (DBR) layer, a quantum well layer, an upper DBR layer, and a P electrode contact layer sequentially stacked on the N electrode contact layer, a P electrode formed on the P electrode contact layer, and an N electrode formed on the N electrode contact layer. The N electrode is a frame that surrounds the lower DBR layer.Type: GrantFiled: June 23, 2011Date of Patent: April 30, 2013Assignees: Samsung Electronics Co., Ltd., Gwangju Institute of Science and TechnologyInventors: Yong-Chul Cho, Yong-Tak Lee, Yong-Hwa Park, Byung-Hoon Na, Bong-Kyu Jeong
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Publication number: 20120162380Abstract: An optical modulator that performs wide bandwidth optical modulation by using multiple Fabry-Perot resonant modes, and an apparatus for capturing a three-dimensional image including the optical modulator are provided. The optical modulator may include: a substrate; a first contact layer disposed on the substrate; a bottom distributed Bragg reflective (DBR) layer disposed on the first contact layer; an active layer disposed on the bottom DBR layer and includes a multiple quantum well layer; a top DBR layer disposed on the active layer; a cavity layer disposed in the top DBR layer; and a second contact layer disposed on the top DBR layer. Since the optical modulator achieves both a high contrast ratio and a wide bandwidth by using two or more Fabry-Perot resonant modes, the optical modulator may show a stable performance even when a resonant wavelength is changed during manufacture or due to an external environment such as temperature.Type: ApplicationFiled: June 17, 2011Publication date: June 28, 2012Applicants: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-chul CHO, Yong-Tak LEE, Yong-Hwa PARK, Byung-Hoon NA
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Publication number: 20120140309Abstract: An optical image modulator and a method of manufacturing the same. The optical image modulator includes a substrate, an N electrode contact layer formed on the substrate, a lower distributed Bragg reflection (DBR) layer, a quantum well layer, an upper DBR layer, and a P electrode contact layer sequentially stacked on the N electrode contact layer, a P electrode formed on the P electrode contact layer, and an N electrode formed on the N electrode contact layer. The N electrode is a frame that surrounds the lower DBR layer.Type: ApplicationFiled: June 23, 2011Publication date: June 7, 2012Applicants: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-Chul CHO, Yong-Tak LEE, Yong-Hwa PARK, Byung-Hoon NA, Bong-Kyu JEONG
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Publication number: 20110181936Abstract: Optical modulator having wide bandwidth based on Fabry-Perot resonant reflection is disclosed. The optical modulator includes: a bottom Distributed Bragg Reflector (DBR) layer; a top DBR layer including at least one layer, and a modified layer; and an active layer disposed between bottom and top DBR layers, wherein the at least one layer includes at least one pair of a first refractive index layer having a first refractive index and a second refractive index layer having a second refractive index, the modified layer includes at least one pair of a third refractive index layer having a third refractive index and a fourth refractive index layer having a fourth refractive index, the third and the fourth refractive indexes being different, and at least one of the third and the fourth refractive index layers has a second optical thickness that is not ?/4 or that is not an odd multiple thereof.Type: ApplicationFiled: November 2, 2010Publication date: July 28, 2011Applicants: SAMSUNG ELECTRONICS CO., LTD., GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Yong-Chul CHO, Yong-Tak LEE, Yong-Hwa PARK, Byung-Hoon NA, Kwang-Mo PARK, Chang-Soo PARK