Abstract: A charge trapping non-volatile organic memory device according to the present invention has a structure in which an organic matter-based blocking layer, a trapping layer, and a tunneling layer are sequentially positioned between a gate and an organic semiconductor layer positioned on an insulating substrate, the trapping layer including a metal oxide and a polymer, and has an organic-inorganic composite film in which the metal oxide is dispersed in a polymer matrix in units of atoms.

Abstract: A three-dimensional semiconductor memory device may include a substrate, a stack structure including interlayer dielectric layers and gate electrodes alternately and repeatedly stacked on the substrate, and vertical channel structures provided in vertical channel holes penetrating the stack structure. Each of the vertical channel structures may include a data storage pattern covering an inner side surface of each of the vertical channel holes, a vertical semiconductor pattern covering the data storage pattern, and a gapfill insulating pattern filling an internal space enclosed by the vertical semiconductor pattern. The vertical semiconductor pattern may have a first surface which is in contact with the gapfill insulating pattern, and a second surface which is in contact with the data storage pattern. A germanium concentration in the vertical semiconductor pattern may decrease in a direction from the first surface toward the second surface.

Abstract: Disclosed are a capacitor for DRAM, a DRAM including the same, and a method of fabricating the same. The DRAM capacitor according to an embodiment may include a first electrode of the DRAM; a second electrode spaced apart from the first electrode; and a dielectric layer including a HfZrO film disposed between the first electrode and the second electrode. The HfZrO film may have an intermediate state corresponding to a phase transition region between a first state in which a tetragonal crystalline phase with anti-ferroelectricity property or a tetragonal crystalline phase is dominant, and a second state in which the orthorhombic crystalline phase with anti-ferroelectricity property or the orthorhombic crystalline phase is dominant. The HfZrO film may include both of the tetragonal crystalline phase and the orthorhombic crystalline phase. The HfZrO film maintains an intermediate state corresponding to the phase transition region within the operating voltage range of the capacitor.

Abstract: A charge trapping non-volatile organic memory device according to the present invention has a structure in which an organic matter-based blocking layer, a trapping layer, and a tunneling layer are sequentially positioned between a gate and an organic semiconductor layer positioned on an insulating substrate, the trapping layer including a metal oxide and a polymer, and has an organic-inorganic composite film in which the metal oxide is dispersed in a polymer matrix in units of atoms.

Abstract: Disclosed is a flexible thermoelectric system. More particularly, the flexible thermoelectric system includes thermoelectric units that are wearable on the human body; a heating unit that is provided on one side of the thermoelectric units so as to be disposed between the thermoelectric units and the skin and is formed of a hygroscopic and exothermic material; and a heat dissipating unit that is provided on other side of the thermoelectric units such that the heat dissipating unit faces the heating unit and the thermoelectric units are disposed between the heat dissipating unit and the heating unit; wherein the heating unit and the heat dissipating unit are flexible. Due to such a configuration, the flexible thermoelectric system may be flexibly attached to the skin and temperature difference between upper and lower surfaces of the thermoelectric units may be maximized. Accordingly, power generation or cooling performance may be improved.

Abstract: Provided are methods of sealing open pores of a surface of a porous dielectric material using an initiated chemical vapor deposition (iCVD) process. In one example method of sealing open pores, since the polymer thin film having a significantly thin thickness may be formed by a solvent-free vapor deposition method without plasma treatment, it is possible to minimize deterioration of characteristics of the dielectric material vulnerable to plasma and a chemical solution.

Abstract: The present disclosure relates to a substrate with multiple nano-gaps and a manufacturing method therefor, and more particularly to a multiple nano-gaps substrate with high absorption and capable of using light sources in a wide range, and a manufacturing method therefor.

Abstract: Provided is a flexible heat sink for a flexible thermoelectric device including a first metal thin film; a phase change layer including a highly conductive foam formed on the first metal thin film and a phase change material filling pores of the highly conductive foam; and a second metal thin film formed on the phase change layer. The flexible heat sink for a flexible thermoelectric device has excellent flexibility, a high heat absorption rate, and a small size for heat sinking performance.

Abstract: Disclosed herein are a high-temperature structure for measuring properties of a curved thermoelectric device, which is capable of precisely measuring the properties of a medium-temperature curved thermoelectric device that is applied to a tube-type waste heat source and is used in research, and a system and a method for measuring the properties using the same. The high-temperature structure may include a plurality of rod-shaped cartridge heaters, and a heating element having a surface that is a curved surface coming into contact with a lower end of the curved thermoelectric device, having a plurality of holes for accommodating the plurality of cartridge heaters, and directly heating the lower end of the curved thermoelectric device.

Abstract: A self-generation sensor device and a self-generation sensor system using the same are disclosed. According to one embodiment, the self-generation sensor device may include: a sensor unit; a communication unit configured to transmit data reflecting a sensed value of the sensor unit; and a thermal power generation module including a pair of main surfaces including a high-temperature surface thermally connected to the high-temperature object and a low-temperature surface which is a surface opposite to the high-temperature surface, a thermoelectric module including a plurality of thermoelectric elements disposed between the pair of main surfaces and producing the power by using a temperature difference between the both main surfaces due to the high-temperature object, and a support member filled in a space between the both main surfaces to support the thermoelectric elements, and a heat dissipation member connected to the low-temperature surface.

Abstract: This invention relates to a metalized skutterudite thermoelectric material having improved long-term stability and a method of manufacturing the same, wherein the skutterudite thermoelectric material is metalized with a multilayer structure including a Ti layer for preventing the diffusion of the skutterudite thermoelectric material and a Fe—Ni layer for preventing an increase in the thickness of an intermetallic compound layer, whereby the performance of the skutterudite thermoelectric material does not deteriorate due to diffusion and formation of the intermetallic compound even upon long-term use, thus exhibiting improved stability of use, and moreover, the lifetime and stability of a thermoelectric power generation module using the skutterudite thermoelectric material can be increased, whereby the power generation efficiency of the thermoelectric power generation module can be increased in the long term.

Abstract: This invention relates to a metalized skutterudite thermoelectric material having improved long-term stability and a method of manufacturing the same, wherein the skutterudite thermoelectric material is metalized with a multilayer structure including a Ti layer for preventing the diffusion of the skutterudite thermoelectric material and a Fe—Ni layer for preventing an increase in the thickness of an intermetallic compound layer, whereby the performance of the skutterudite thermoelectric material does not deteriorate due to diffusion and formation of the intermetallic compound even upon long-term use, thus exhibiting improved stability of use, and moreover, the lifetime and stability of a thermoelectric power generation module using the skutterudite thermoelectric material can be increased, whereby the power generation efficiency of the thermoelectric power generation module can be increased in the long term.

Abstract: Provided are a method of locally sealing only pores present in a surface part of a porous dielectric material by forming a polymer thin film through an initiated chemical vapor deposition (iCVD) method using an initiator, and a method of minimizing an increase in a dielectric constant induced therefrom.

Abstract: The present invention relates to a flexible thermoelectric element and a production method therefor, the flexible thermoelectric element comprising: a thermoelectric material column array including one or more N-type thermoelectric material and one or more P-type thermoelectric material which are spaced apart from each other; an electrode configured to electrically connect the thermoelectric materials of the thermoelectric material column array; and a foam configured to fill in at least a void of the thermoelectric material column array.

Abstract: The present disclosure relates to a substrate with multiple nano-gaps and a manufacturing method therefor, and more particularly to a multiple nano-gaps substrate with high absorption and capable of using light sources in a wide range, and a manufacturing method therefor.

Abstract: Disclosed is a flexible thermoelectric system. More particularly, the flexible thermoelectric system includes thermoelectric units that are wearable on the human body; a heating unit that is provided on one side of the thermoelectric units so as to be disposed between the thermoelectric units and the skin and is formed of a hygroscopic and exothermic material; and a heat dissipating unit that is provided on other side of the thermoelectric units such that the heat dissipating unit faces the heating unit and the thermoelectric units are disposed between the heat dissipating unit and the heating unit; wherein the heating unit and the heat dissipating unit are flexible. Due to such a configuration, the flexible thermoelectric system may be flexibly attached to the skin and temperature difference between upper and lower surfaces of the thermoelectric units may be maximized. Accordingly, power generation or cooling performance may be improved.

Abstract: Provided are methods of sealing open pores of a surface of a porous dielectric material using an initiated chemical vapor deposition (iCVD) process. In one example method of sealing open pores, since the polymer thin film having a significantly thin thickness may be formed by a solvent-free vapor deposition method without plasma treatment, it is possible to minimize deterioration of characteristics of the dielectric material vulnerable to plasma and a chemical solution.

Abstract: Disclosed herein are a high-temperature structure for measuring properties of a curved thermoelectric device, which is capable of precisely measuring the properties of a medium-temperature curved thermoelectric device that is applied to a tube-type waste heat source and is used in research, and a system and a method for measuring the properties using the same. The high-temperature structure may include a plurality of rod-shaped cartridge heaters, and a heating element having a surface that is a curved surface coming into contact with a lower end of the curved thermoelectric device, having a plurality of holes for accommodating the plurality of cartridge heaters, and directly heating the lower end of the curved thermoelectric device.

Abstract: This disclosure relates to a method of manufacturing n-doped graphene and an electrical component using ammonium fluoride (NH4F), and to graphene and an electrical component thereby. An example method of manufacturing n-doped graphene includes (a) preparing graphene and ammonium fluoride (NH4F); and (b) exposing the graphene to the ammonium fluoride (NH4F), wherein through (b), a fluorine layer is formed on part or all of upper and lower surfaces of a graphene layer, and ammonium ions are physisorbed to part or all of the upper and lower surfaces of the graphene layer or defects between carbon atoms of the graphene layer, thereby maintaining or further improving superior electrical properties of graphene including charge mobility while performing n-doping of graphene.

Abstract: A semiconductor element includes: a substrate; a gate dielectric layer formed over the substrate; a flat band voltage adjusting layer formed over the gate dielectric layer; and an intermediate layer formed between the gate dielectric layer and the flat band voltage adjusting layer. A negative flat band voltage generated at the intermediate layer and a positive flat band voltage generated between the substrate and the gate dielectric layer may offset each other.