Abstract: A laser apparatus includes a laser generator configured to generate a first laser beam proceeding along a first direction, and an inversion module configured to convert the first laser beam to a second laser beam proceeding along the first direction, the inversion module including a splitter configured to form a reflected laser beam by partially reflecting the first laser beam, and a transmitted laser beam by partially transmitting the first laser beam, and a prism configured to reflect the reflected laser beam.

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Abstract: An annealing apparatus includes: a main body configured to receive a substrate; a microwave generating unit configured to generate microwaves to be transmitted to the main body; an incidence unit configured to transmit the microwaves from the microwave generating unit to the main body; and a diffraction unit disposed between the incident unit and the main body. The diffraction unit is configured to pass the microwaves therethrough before they are transmitted to the main body.

Abstract: A display device and a method of manufacturing a display device are provided. A display device includes a lower conductive pattern disposed on a substrate, a lower insulating layer disposed on the lower conductive pattern, the lower insulating layer including a first lower insulating pattern including an overlapping region overlapping the lower conductive pattern, and a protruding region. The display device includes a semiconductor pattern disposed on the first lower insulating pattern and having a side surface, the side surface being aligned with a side surface of the first lower insulating pattern or disposed inward from the side surface of the first lower insulating pattern, a gate insulating layer disposed on the semiconductor pattern, a gate electrode disposed on the gate insulating layer, and an empty space disposed between the substrate and the protruding region of the first lower insulating pattern.

Abstract: A display device may include a substrate, a buffer layer on the substrate, a first active pattern on the buffer layer, the first active pattern having a first thickness, a second active pattern on the buffer layer spaced from the first active pattern and having a second thickness smaller than the first thickness, a first gate insulating layer on the first active pattern and the second active pattern, a first gate electrode on the first gate insulating layer, the first gate electrode overlapping the first active pattern, and a second gate electrode on the first gate insulating layer, the second gate electrode overlapping the second active pattern.

Abstract: A laser crystallization device includes: a first solid-state laser generator which generates a first solid-state laser having a first energy intensity; a second solid-state laser generator which generates a second solid-state laser having a second energy intensity lower than the first energy intensity; and a third solid-state laser generator which generates a third solid-state laser having a third energy intensity lower than the first energy intensity.

Abstract: A display device includes: a substrate; a semiconductor layer on the substrate, and including a channel of at least one transistor; a first insulating layer on the semiconductor layer; and a gate electrode on the first insulating layer. The semiconductor layer includes polycrystalline silicon, and the channel includes: a first region containing a first impurity; and a second region containing a second impurity different from the first impurity.

Abstract: A display panel according to an embodiment includes a substrate, a thin film transistor disposed on the substrate, and a light emitting element electrically connected to the thin film transistor. The substrate includes a first resin layer, a first barrier layer disposed on the first resin layer, a second resin layer including a lower portion disposed on the first barrier layer and an upper portion having a carbon content less than a carbon content of the lower portion, and a second barrier layer disposed on the second resin layer.

Abstract: A display device may include a substrate, a buffer layer on the substrate, a first active pattern on the buffer layer, the first active pattern having a first thickness, a second active pattern on the buffer layer spaced from the first active pattern and having a second thickness smaller than the first thickness, a first gate insulating layer on the first active pattern and the second active pattern, a first gate electrode on the first gate insulating layer, the first gate electrode overlapping the first active pattern, and a second gate electrode on the first gate insulating layer, the second gate electrode overlapping the second active pattern.

Abstract: A laser crystallizing apparatus may include a laser light source, an optical system, and an optical module. The laser light source may generate a laser beam. The optical system may convert the laser beam into a line laser beam. The optical module may disperse energy of the line laser beam in a first direction for generating a dispersed line laser beam. The first direction may be perpendicular to a lengthwise direction of the optical module.

Abstract: A method of manufacturing a display device including forming a polysilicon layer on a substrate, patterning the polysilicon layer to form a polysilicon pattern including a first region and a second region each having a first thickness, and a third region having a second thickness less than the first thickness, forming a gate insulation layer on the polysilicon pattern, forming a gate electrode on the gate insulation layer, partially implanting ions into the polysilicon pattern to form an active layer, forming an insulation interlayer on the gate electrode, forming source and drain contact holes each passing through the insulation interlayer and the gate insulation layer and respectively overlapping the first region and the second region, forming source and drain electrodes respectively filling the source and drain contact holes, and forming a light emitting element electrically connected to the source electrode or the drain electrode.

Abstract: A laser annealing device includes a stage, a laser generator, and a reflective member. The stage supports a substrate with a thin film formed thereon to be processed, and may be moved in a first direction at a set or predetermined speed. The laser generator irradiates a first area of the thin film with a laser beam while the stage is moved. The reflective member reflects a part of the laser beam, which is reflected from the first area of the thin film, to a second area of the thin film. The first area and the second area are spaced apart from each other.

Abstract: A laser apparatus includes a laser generator configured to generate a first laser beam proceeding along a first direction, and an inversion module configured to convert the first laser beam to a second laser beam proceeding along the first direction, the inversion module including a splitter configured to form a reflected laser beam by partially reflecting the first laser beam, and a transmitted laser beam by partially transmitting the first laser beam, and a prism configured to reflect the reflected laser beam.

Abstract: A laser irradiation apparatus includes: a laser module configured to emit a laser beam; a first optical system configured to scan the laser beam emitted from the laser module along a first direction; an optical element configured to refract the laser beam emitted from the first optical system; and a substrate supporter on which a base substrate to which the laser beam refracted through the optical element reaches is arranged.

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.

Abstract: A laser apparatus includes a laser generator configured to generate a first laser beam proceeding along a first direction, and an inversion module configured to convert the first laser beam to a second laser beam proceeding along the first direction, the inversion module including a splitter configured to form a reflected laser beam by partially reflecting the first laser beam, and a transmitted laser beam by partially transmitting the first laser beam, and a prism configured to reflect the reflected laser beam.