Abstract: A method includes receiving a natural language query at an information system, the natural language query indicating an intent and at least a first factor and a second factor. The method also includes retrieving a set of candidate information from the information system based on the natural language query, the set of candidate information having a type determined by the intent. The method additionally includes selecting a knowledge display template from a set of knowledge display templates using the intent, the first factor and the second factor. The method further includes rendering, using the knowledge display template, a first knowledge graph comprising the set of candidate information, the first knowledge graph indicating a relationship between the set of candidate information based the first factor and the second factor.

Abstract: A semiconductor device and method for fabricating such a device are presented. The semiconductor device includes a first gate electrode of a transistor, a first sidewall spacer along a sidewall of the gate pattern, a first insulating layer in contact with the first sidewall spacer and having a planarized top surface, and a second sidewall spacer formed on the planarized top surface of the first insulating layer. The second sidewall spacer may be formed over the first sidewall spacer. A width of the second sidewall spacer is equal to or greater than a width of the first sidewall spacer.

Abstract: A method includes receiving a natural language query at an information system, the natural language query indicating an intent and at least a first factor and a second factor. The method also includes retrieving a set of candidate information from the information system based on the natural language query, the set of candidate information having a type determined by the intent. The method additionally includes selecting a knowledge display template from a set of knowledge display templates using the intent, the first factor and the second factor. The method further includes rendering, using the knowledge display template, a first knowledge graph comprising the set of candidate information, the first knowledge graph indicating a relationship between the set of candidate information based the first factor and the second factor.

Abstract: A semiconductor device and method for fabricating such a device are presented. The semiconductor device includes a first gate electrode of a transistor, a first sidewall spacer along a sidewall of the gate pattern, a first insulating layer in contact with the first sidewall spacer and having a planarized top surface, and a second sidewall spacer formed on the planarized top surface of the first insulating layer. The second sidewall spacer may be formed over the first sidewall spacer. A width of the second sidewall spacer is equal to or greater than a width of the first sidewall spacer.

Abstract: A semiconductor device and method for fabricating such a device are presented. The semiconductor device includes a first gate electrode of a transistor, a first sidewall spacer along a sidewall of the gate pattern, a first insulating layer in contact with the first sidewall spacer and having a planarized top surface, and a second sidewall spacer formed on the planarized top surface of the first insulating layer. The second sidewall spacer may be formed over the first sidewall spacer. A width of the second sidewall spacer is equal to or greater than a width of the first sidewall spacer.

Abstract: The present disclosure relates to phenothiazine derivatives such as conjugates of phenothiazine compounds, as well as pharmaceutical compositions thereof. The present disclosure also relates to a method of making and the use of such compounds for treating cancer, e.g., a lung cancer, a colon cancer, breast cancer or pancreatic cancer.

Abstract: A semiconductor device and method for fabricating such a device are presented. The semiconductor device includes a first gate electrode of a transistor, a first sidewall spacer along a sidewall of the gate pattern, a first insulating layer in contact with the first sidewall spacer and having a planarized top surface, and a second sidewall spacer formed on the planarized top surface of the first insulating layer. The second sidewall spacer may be formed over the first sidewall spacer. A width of the second sidewall spacer is equal to or greater than a width of the first sidewall spacer.

Abstract: The present disclosure relates to phenothiazine derivatives such as conjugates of phenothiazine compounds, as well as pharmaceutical compositions thereof. The present disclosure also relates to a method of making and the use of such compounds for treating cancer, e.g., a lung cancer, a colon cancer, breast cancer or pancreatic cancer.

Abstract: A unity gain amplifier based on CMOS technology designed to drive a large capacitive load such as a piezoelectric speaker with a 5V power supply. The invention utilizes a rail-to-rail voltage range (i.e., ground to power supply voltage) at its input as well as at its output and is capable of entering into a power down mode, In this manner, it is possible to produce as a single application specific integrated circuit (ASIC), a circuit for converting a digital signal to an analog signal and amplifying the analog signal so as to be capable of driving a large capacitive load with a rail-to-rail dynamic range and which operates at low noise.

Abstract: A multipowered source vehicle having two or more power sources which can be operated concurrently or asynchronously and which include an electric motor and an engine. The electric motor and engine are each connected to one output shaft and arranged in parallel with each other and transverse of the longitudinal axes of the vehicle. In concurrent operation, the electric motor and engine operate to enhance the total power of the vehicle.

Abstract: A multi-axle driving mechanism for agricultural carrier comprising two individual transmissions driven by the same power source, one of the transmissions is secured and connected to a differential disposed between two front half driving axles each provided with a front driving wheel while the other transmission is secured and connected to a continuous rear driving axle provided with a pair of rear driving wheels; a pair of lost motion means disposed between the end of the continuous rear driving axle and the rear driving wheels; and front and rear frames respectively secured on the front and rear driving axles, and connected one with the other by means of a rotatable shaft longitudinally arranged therebetween.