Abstract: A new method for planarization of shallow trench isolation is disclosed by using wet selective etching. The formation of the shallow trench isolation described herein includes a pad layer, a silicon nitride layer formed on a semiconductor substrate. A PE-TEOS oxide layer is subsequently formed on the silicon nitride layer. Then a shallow trench is created by photolithography and dry etching processes to etch the PE-TEOS oxide layer, the silicon nitride layer and the pad layer. Then, the photoresist is removed, an ozone-TEOS layer is form in the shallow trench and on the PE-TEOS oxide layer for the purpose of isolation. A wet selective etching is used to etch the ozone-TEOS layer. A CMP is performed to make the surface of the substrate with a planar surface. Then, a thermal annealing is used for densification of the ozone-TEOS layer and for forming a lining oxide to improve the isolation of the shallow trench isolation.

Abstract: The present invention discloses a method for enhancing profile control in a metal line etching process in which a main etching step and an over etching step are used by incorporating a charge neutralization step for the photoresist layer by an inert gas plasma such that plasma ions aimed at the horizontal surface on the semiconductor substrate is not distorted to bombard the sidewalls on the metal lines. The anisotropic etching of the metal lines is improved to provide metal lines on a device that has enhanced profile control and without the void or cavity defect.

Abstract: The present invention is a method for forming a shallow trench with tapered profile and round corners for the application of shallow trench isolation (STI). This invention utilizes a multiple-step dry etching process with reduced RF power and increased pressure to etch a shallow trench. This takes advantage of different degree of polymer deposition in different steps by varing the pressure and the RF power. Thus, a shallow trench with tapered profile and round corners is achieved.

Abstract: A new method is disclosed to form a shallow trench isolation with a ozone-TEOS as a gapfilling material. The formation of the shallow trench isolation described herein includes a pad layer, a silicon nitride layer formed on a semiconductor substrate. A thermal oxide layer is subsequently formed on the silicon nitride layer. Then a shallow trench is created via photolithography and dry etching steps to etch the thermal oxide layer, the silicon nitride layer and the pad layer. After photoresist is removed, an ozone-TEOS layer is form in the shallow trench and on the top of the thermal oxide layer for the purpose of isolation. A CMP is perform to make the surface of the substrate with a planar surface. Then, a thermal annealing is used for densification of the ozone-TEOS layer and for forming a lining oxide to provide better isolation.