Abstract: An apparatus and method for processing a microelectronic substrate comprises a main chamber and a movable boundary. The main chamber comprises a main chamber wall enclosing a main chamber interior. The movable boundary is disposed within the main chamber interior, and is movable between a first position and a second position. At the first position, the movable boundary at least partially defines a sub-chamber in which a substrate can be processed. The sub-chamber is fluidly isolated from the main chamber interior, and provides an environment suitable for a high-pressure processing of the substrate such as cleaning or surface preparation. The sub-chamber can be maintained at a high pressure while the main chamber is maintained at either a low pressure, an atmospheric pressure, or at a vacuum. The apparatus can be directly coupled to an external substrate handling and/or fabrication module, such that the main chamber interior provides a buffer between the sub-chamber and the external module.

Abstract: An apparatus and method for processing a microelectronic substrate comprises a main chamber and a movable boundary. The main chamber comprises a main chamber wall enclosing a main chamber interior. The movable boundary is disposed within the main chamber interior, and is movable between a first position and a second position. At the first position, the movable boundary at least partially defines a sub-chamber in which a substrate can be processed. The sub-chamber is fluidly isolated from the main chamber interior, and provides an environment suitable for a high-pressure processing of the substrate such as cleaning or surface preparation. The sub-chamber can be maintained at a high pressure while the main chamber is maintained at either a low pressure, an atmospheric pressure, or at a vacuum. The apparatus can be directly coupled to an external substrate handling and/or fabrication module, such that the main chamber interior provides a buffer between the sub-chamber and the external module.