Abstract: A method of manufacturing a semiconductor integrated circuit (IC) device that integrates a TLPM and one or more planar semiconductor devices on a semiconductor substrate. In manufacturing the semiconductor IC device according to one embodiment, a trench etching forms a trench. A p-type body region, an n-type expanded drain region, and a thick oxide film are formed. A second trench etching deepens the trench. Gate oxide films and gate electrodes of the TLPM, an NMOSFET, and a PMOSFET are formed. P-type base regions of the TLPM and an NPN bipolar transistor are formed. An n-type source and drain region of the TLPM, and n-type diffusion regions of the NMOSFET and the NPN bipolar transistor are formed. P-type diffusion regions of the PMOSFET and the NPN bipolar transistor are formed. An interlayer oxide film, a contact electrode, and constituent metal electrodes are formed.

Abstract: A low voltage, low power, high linearity active CMOS mixer for radio frequency (RF) wireless communication applications consists of high linearity RF transconductor to convert the incoming RF voltage into a RF current; an ac-coupling stage to deliver the RF current to the next stage, and to block the DC signal and the flicker noise of the RF transconductor; followed by a current commutating (mixing) stage to down-convert the RF signal to the desired intermediate frequency (IF), and an IF section that converts the down-converted signal current back to voltage. The invention suggests a novel low-voltage, low-power RF mixer circuit that exhibits a high linearity in terms of IIP2 and IIP3 and is suitable for a low voltage, direct conversion receiver (DCR) which requires a relatively high IIP2. The DCR is a candidate for the fourth generation of mobile communication systems (4G).