Patents by Inventor C. Scott Nevin

C. Scott Nevin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transmission method to determine and control the temperature of wafers or thin layers with special application to semiconductors
    Patent number: 5170041
    Abstract: A method of accurately determining the temperature of a thin layer of bandgap material without requiring contact to the layer involves the use of optical radiation through the layer and the detection of optical absorption by the layer. The relationship between the temperature varying bandgap energy and the resulting optical absorption characteristics provides an indication of temperature independent of ambient temperature. Apparatus for performing high quality temperature detection and control is also provided.
    Type: Grant
    Filed: September 20, 1990
    Date of Patent: December 8, 1992
    Assignee: ITT Corporation
    Inventors: Avraham Amith, Charles Naselli, C. Scott Nevin
  • Transmission method to determine and control the temperature of wafers or thin layers with special application to semiconductors
    Patent number: 5167452
    Abstract: A method of accurately determining the temperature of a thin layer of bandgap material without requiring contact to the layer involves the use of optical radiation through the layer and the detection of optical absorption by the layer. The relationship between the temperature varying bandgap energy and the resulting optical absorption characteristics provides an indication of temperature independent of ambient temperature. Apparatus for performing high quality temperature detection and control is also provided.
    Type: Grant
    Filed: August 28, 1989
    Date of Patent: December 1, 1992
    Assignee: ITT Corporation
    Inventors: Avraham Amith, Charles Naselli, C. Scott Nevin
  • Transmission method to determine and control the temperature of wafers or thin layers with special application to semiconductors
    Patent number: 4890933
    Abstract: A method of accurately determining the temperature of a thin layer of bandgap material without requiring contact to the layer involves the use of optical radiation through the layer and the detection of optical absorption by the layer. The relationship between the temperature varying bandgap energy and the resulting optical absorption characteristics provides an indication of temperature independent of ambient temperature. Apparatus for performing high quality temperature detection and control is also provided.
    Type: Grant
    Filed: February 17, 1988
    Date of Patent: January 2, 1990
    Assignee: ITT Corporation
    Inventors: Avraham Amith, Charles Naselli, C. Scott Nevin