Abstract: The subject of the present invention is a method for producing a gas separation membrane, comprising the deposition of a film from a silica sol onto a porous support followed by heat treatment of the film thus deposited, in which the silica sol deposited is prepared by hydrolysing a silicon alkoxide in the presence of a doping amount of a precursor of an oxide of a trivalent element, especially boron or aluminium. The invention also relates to the membranes as obtained by this method, and also to their uses, especially for the separation of helium or hydrogen at high temperature, and in particular for removing impurities in helium streams.