Abstract: A wafer and a fabrication method include a base structure including a substrate for fabricating semiconductor devices. The base structure includes a front side where the semiconductor devices are formed and a back side opposite the front side. An integrated layer is formed in the back side of the base structure including impurities configured to alter etch selectivity relative to the base structure such that the integrated layer is selectively removable from the base structure to remove defects incurred during fabrication of the semiconductor devices.

Abstract: A method includes forming a cavity in a substrate, depositing a layer of conductive material in the cavity and over exposed portions of the substrate, removing portions of the conductive material to expose portions of the substrate using a planarizing process, and removing residual portions of the conductive material disposed on the substrate using a reactive ion etch (RIE) process.

Abstract: A wafer and a fabrication method include a base structure including a substrate for fabricating semiconductor devices. The base structure includes a front side where the semiconductor devices are formed and a back side opposite the front side. An integrated layer is formed in the back side of the base structure including impurities configured to alter etch selectivity relative to the base structure such that the integrated layer is selectively removable from the base structure to remove defects incurred during fabrication of the semiconductor devices.

Abstract: A wafer and a fabrication method include a base structure including a substrate for fabricating semiconductor devices. The base structure includes a front side where the semiconductor devices are formed and a back side opposite the front side. An integrated layer is formed in the back side of the base structure including impurities configured to alter etch selectivity relative to the base structure such that the integrated layer is selectively removable from the base structure to remove defects incurred during fabrication of the semiconductor devices.

Abstract: A wafer and a fabrication method include a base structure including a substrate for fabricating semiconductor devices. The base structure includes a front side where the semiconductor devices are formed and a back side opposite the front side. An integrated layer is formed in the back side of the base structure including impurities configured to alter etch selectivity relative to the base structure such that the integrated layer is selectively removable from the base structure to remove defects incurred during fabrication of the semiconductor devices.

Abstract: A method includes forming a cavity in a substrate, depositing a layer of conductive material in the cavity and over exposed portions of the substrate, removing portions of the conductive material to expose portions of the substrate using a planarizing process, and removing residual portions of the conductive material disposed on the substrate using a reactive ion etch (RIE) process.

Abstract: This invention relates to the cleaning of objects that relate to semiconductor printing, such as, for example, screening masks. This invention is basically directed to removing, for example, an organic polymer-metal composite paste from screening masks used in printing conductive metal patterns onto ceramic green sheets in the fabrication of semiconductor packaging substrates. More particularly, this invention is concerned with the automated in-line cleaning of paste screening masks with an aqueous alkaline solution of a quaternary ammonium hydroxide as a more environmentally friendly alternative to non-aqueous organic solvents-based cleaning in screening operations for the production multilayer ceramic (MLC) substrates.

Abstract: This invention relates to the cleaning of objects that relate to semiconductor printing, such as, for example, screening masks. This invention is basically directed to removing, for example, an organic polymer-metal composite paste from screening masks used in printing conductive metal patterns onto ceramic green sheets in the fabrication of semiconductor packaging substrates. More particularly, this invention is concerned with the automated in-line cleaning of paste screening masks with an aqueous alkaline solution of a quaternary ammonium hydroxide as a more environmentally friendly alternative to non-aqueous organic solvents-based cleaning in screening operations for the production multilayer ceramic (MLC) substrates.

Abstract: An interface layer for separating first and second microelectronic ceramic substrates during firing includes a thermally degradable binder, preferably a polymer, that degrades at temperatures above room temperature and below a firing temperature for the microelectronic ceramic substrates, and a separating material, such as boron nitride or graphite. The method of making the interface layer includes mixing the binder, one or more solvents for the binder, a plasticizer and the separating material for a sufficient period of time to form a homogeneous mass, then casting the material in a thin sheet to form the interface layer.

Abstract: A cleaning method and related apparatus for cleaning semiconductor screening masks using an aqueous alkali detergent solution applied under high pressure simultaneously from both sides of the mask, followed by a drying step that uses air knives to blow off the mask surface any residual cleaner solution.

Abstract: A cleaning method and related apparatus for cleaning semiconductor screening masks using an aqueous alkali detergent solution applied under high pressure simultaneously from both sides of the mask, followed by a drying step that uses air knives to blow off the mask surface any residual cleaner solution.

Abstract: A process for making multiple microelectronic ceramic substrates uses an interface layer between stacked layers of green sheets that are laminated with the interface layer, then fired to produce the ceramic substrates. The interface layer acts to protect the substrates, and to hold them together before firing, then thermally degrades at a desired point in the firing cycle to separate the individual substrates. The invention also includes the ceramic substrates produced by the method.

Abstract: An interface layer for separating first and second microelectronic ceramic substrates during firing includes a thermally degradable binder, preferably a polymer, that degrades at temperatures above room temperature and below a firing temperature for the microelectronic ceramic substrates, and a separating material, such as boron nitride or graphite. The method of making the interface layer includes mixing the binder, one or more solvents for the binder, a plasticizer and the separating material for a sufficient period of time to form a homogeneous mass, then casting the material in a thin sheet to form the interface layer.

Abstract: The present invention relates generally to a new apparatus and method for screening using electrostatic adhesion. More particularly, the invention encompasses an apparatus that uses an electrostatic charge during the screening process for a semiconductor substrate. Basically, a backing layer is adhered to a green ceramic sheet using an electrostatic charge, while the green ceramic sheet is processed.