Patents by Inventor Carl Anthony Witt

Carl Anthony Witt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Rugged semiconductor device architecture
    Patent number: 8124981
    Abstract: A wide bandgap silicon carbide device has an avalanche control structure formed in an epitaxial layer of a first conductivity type above a substrate that is connected to a first electrode of the device. A first region of a second conductivity type is in the upper surface of the epitaxial layer with a connection to a second electrode of the device. A second region of the first conductivity type lies below the first region and has a dopant concentration greater than the dopant concentration in the epitaxial layer.
    Type: Grant
    Filed: June 10, 2008
    Date of Patent: February 28, 2012
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Christopher L. Rexer, Gary M. Dolny, Richard L. Woodin, Carl Anthony Witt, Joseph Shovlin
  • RUGGED SEMICONDUCTOR DEVICE ARCHITECTURE
    Publication number: 20090302327
    Abstract: A wide bandgap silicon carbide device has an avalanche control structure formed in an epitaxial layer of a first conductivity type above a substrate that is connected to a first electrode of the device. A first region of a second conductivity type is in the upper surface of the epitaxial layer with a connection to a second electrode of the device. A second region of the first conductivity type lies below the first region and has a dopant concentration greater than the dopant concentration in the epitaxial layer.
    Type: Application
    Filed: June 10, 2008
    Publication date: December 10, 2009
    Inventors: Christopher L. Rexer, Gary M. Dolny, Richard L. Woodin, Carl Anthony Witt, Joseph Shovlin
  • Method and device with durable contact on silicon carbide
    Patent number: 7618884
    Abstract: A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.
    Type: Grant
    Filed: April 21, 2008
    Date of Patent: November 17, 2009
    Assignee: Fairchild Semiconductor Corporation
    Inventors: William F. Seng, Richard L. Woodin, Carl Anthony Witt
  • METHOD AND DEVICE WITH DURABLE CONTACT ON SILICON CARBIDE
    Publication number: 20080227275
    Abstract: A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.
    Type: Application
    Filed: April 21, 2008
    Publication date: September 18, 2008
    Applicant: Fairchild Semiconductor Corporation
    Inventors: William F. Seng, Richard L. Woodin, Carl Anthony Witt
  • Method and device with durable contact on silicon carbide
    Patent number: 7411218
    Abstract: A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.
    Type: Grant
    Filed: March 18, 2005
    Date of Patent: August 12, 2008
    Assignee: Fairchild Semiconductor Corporation
    Inventors: William F. Seng, Richard L. Woodin, Carl Anthony Witt