Abstract: An apparatus for forming a crystalline ribbon from molten silicon having a silicon ribbon support. A heater is provided including a pair of spaced planar electrodes parallel to the surface of the molten silicon for capacitively coupling radio frequency electrical currents into the material causing a ribbon of material to melt along a zone. A conductive electrode in thermal contact with a respective cooler and a dielectric layer between the conductive and semi-conductive electrodes is provided. A controller configured to control the removal of heat from the melted ribbon of material in a direction substantially perpendicular to the surface of the molten silicon to effect crystal growth.

Abstract: An apparatus for the continuously forming a crystalline ribbon from molten silicon is introduced. A heater is provided including a pair of spaced planar electrodes parallel to the surface of the molten silicon for capacitively coupling radio frequency electrical currents into the material causing a ribbon of material to melt along a zone. A conductive electrode in thermal contact with a respective cooler and a dielectric layer between the conductive and semi-conductive electrodes is provided. A closeable transfer lock defining a chamber configured to accept a portion of the crystalline ribbon is used to transport a portion of the crystalline ribbon out of apparatus while recycling inert gas used in the system.

Abstract: An apparatus for forming a crystalline ribbon from molten silicon having a silicon ribbon support. A heater is provided including a pair of spaced planar electrodes parallel to the surface of the molten silicon for capacitively coupling radio frequency electrical currents into the material causing a ribbon of material to melt along a zone. A conductive electrode in thermal contact with a respective cooler and a dielectric layer between the conductive and semi-conductive electrodes is provided. A controller configured to control the removal of heat from the melted ribbon of material in a direction substantially perpendicular to the surface of the molten silicon to effect crystal growth, and to control the fluid level of the material in the crucible.

Abstract: An apparatus for forming a crystalline ribbon from molten silicon having a silicon ribbon support. A heater is provided including a pair of spaced planar electrodes parallel to the surface of the molten silicon for capacitively coupling radio frequency electrical currents into the material causing a ribbon of material to melt along a zone. A conductive electrode in thermal contact with a respective cooler and a dielectric layer between the conductive and semi-conductive electrodes is provided. A controller configured to control the removal of heat from the melted ribbon of material in a direction substantially perpendicular to the surface of the molten silicon to effect crystal growth.

Abstract: Crystals are grown in ribbon shapes by an apparatus for supporting a film of source material, capacitive electrodes contacting the film and heat pipes in thermal contact with the electrodes for first heating the material through the electrodes to near its melting temperature and then for controllably cooling the electrodes, an rf heater using the electrodes for melting the film in a zone, a heat pipe for causing solidification along one surface of the melt zone to form a ribbon, a pulling mechanism for moving the ribbon from the melt zone, a heater for melting bulk replenishing material to replenish the melt, and an auxiliary heating device for heating the ribbon after leaving the zone to prevent dendritic growth by maintaining low axial temperature gradients.

Abstract: Crystals are grown in ribbon shapes by an apparatus for supporting a film of source material, capacitive electrodes contacting the film and heat pipes in thermal contact with the electrodes for first heating the material through the electrodes to near its melting temperature and then for controllably cooling the electrodes, an rf heater using the electrodes for melting the film in a zone, a heat pipe for causing solidification along one surface of the melt zone to form a ribbon, a pulling mechanism for moving the ribbon from the melt zone, a heater for melting bulk replenishing material to replenish the melt, and an auxiliary heating device for heating the ribbon after leaving the zone to prevent dendritic growth by maintaining low axial temperature gradients.

Abstract: Crystals are grown in ribbon shapes by an apparatus for supporting a film of source material, capacitive electrodes contacting the film and heat pipes in thermal contact with the electrodes for first heating the material through the electrodes to near its melting temperature and then for controllably cooling the electrodes, an rf heater using the electrodes for melting the film in a zone, a heat pipe for causing solidification along one surface of the melt zone to form a ribbon, a pulling mechanism for moving the ribbon from the melt zone, a heater for melting bulk replenishing material to replenish the melt, and an auxiliary heating device for heating the ribbon after leaving the zone to prevent dendritic growth by maintaining low axial temperature gradients.

Abstract: Apparatus for producing crystalline ribbons of a material from a "crucible-less" configuration of bodies of the material including possible deposition on a substrate. Means for capacitively coupling electromagnetic energy into a source body of material are provided to appropriately induce electrical current gradients in order to control and restrict the molten zone and supress net loss of the heat of fusion from the balance of the ribbon-like body. The melt zone is replenished from any direction with ribbon or a bulk source to sustain the shape and size of the growing ribbon-like body. The heat of crystallization is selectively removed by a heat sink from one end of the melt zone in a direction substantially perpendicular to the direction of pulling.

Abstract: A method and apparatus for producing crystalline ribbons of a material from a "crucible-less" configuration of bodies of the material including possible deposition on a substrate. Means for coupling electromagnetic energy into a source body of material are provided to appropriately induce electrical currents in order to control and restrict the molten zone and suppress net loss of the heat of fusion from the balance of the ribbon-like body. The melt zone is replenished to sustain the shape and size of the growing ribbon-like body. The heat of crystallization is selectively removed by a heat absorbing means from one end of the melt zone in a direction substantially perpendicular to the direction of pulling.

Abstract: A method and apparatus for producing crystalline ribbons by zone melting. Means for coupling electromagnetic energy into a film of material are provided to appropriately induce electrical currents in order to control and restrict the molten zone and suppress net loss of the heat of fusion from the balance of the ribbon in contact with the melt, thus controlling the thickness uniformity of the resulting ribbon. The heat of crystallization is selectively removed by a heat absorbing means from one end of the melt zone in a direction substantially perpendicular to the direction of pulling.

Abstract: A line of laser light is produced having a uniform intensity over an area of ten centimeters by one centimeter and having an energy density of several J/cm.sup.2. A grating forms from a laser beam several divergent beams of nearly equal intensity and a converging lens collimates the beams into slightly overlapping paths to produce a uniform line of light in one plane. A laser amplifier in a flat plate configuration in that plane includes a nested series of laser rods of triangular cross-section which are pumped by a plurality of flashlamps to amplify the line of light and produce an intense uniform line of laser light.