Abstract: A ferroelectric capacitor and method for making the same are disclosed. The ferroelectric capacitor may be constructed on a silicon substrate such as SiO.sub.2 or Si.sub.3 N.sub.4. The ferroelectric capacitor includes a bottom electrode, a layer of ferroelectric material, and a top electrode. The bottom electrode is constructed from a layer of platinum which is bonded to the silicon substrate by a layer of metallic oxide. The metallic oxide does not diffuse into the platinum; hence, a thinner layer of platinum may be utilized for the electrode. This reduces the vertical height of the capacitor and other problems associated with diffusion of the layer used to bond the bottom electrode to the substrate surface.

Abstract: The sensing array detects an image by measuring the changes in the dielectric constant of individual capacitors in a rectangular array of capacitors. The present invention avoids the use of isolation transistors to eliminate the effects of other capacitors in the array when measuring the capacitance of a given capacitor in the array. During the measurement of any given capacitor in the array, the present invention maintains a zero potential difference across the capacitors that are not being measured, thereby eliminating any interference that might be caused by these capacitors.

Abstract: A method for generating platinum features on the surface of a substrate is disclosed. The method provides an inexpensive means for constructing small platinum features. The method utilizes a photoresist mask to define the platinum features. The problems associated with residue from the deposition of the photoresist mask are overcome by utilizing an etching step which removes any such residue. The etching step also allows the platinum features to be recessed into the substrate surface.

Abstract: An improved method for constructing integrated circuit structures in which a buffer SiO.sub.2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the SiO.sub.2 buffer layer and the ferroelectric materials. The invention also prevents the cracking in the SiO.sub.2 which is commonly observed when the SiO.sub.2 layer is deposited directly over a platinum region on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material and which is also an electrical insulator to separate the SiO.sub.2 layer from the ferroelectric material and/or the platinum regions.

Abstract: An improved ferroelectric structure and the method for making the same is disclosed. The improved structure reduces the fatigue problems encountered in ferroelectric capacitors while providing avoiding problems in depositing the ferroelectric material which have prevented other solutions to the fatigue problem from being effective. The improved ferroelectric structure also provides improved adhesion to the underlying substrate. The ferroelectric structure has a bottom electrode comprising a layer of PtO.sub.2 which is generated by depositing a layer of Platinum on a suitable substrate and then exposing the Platinum layer to an Oxygen plasma. The ferroelectric material is then deposited on the PtO.sub.2 layer.