Abstract: A fluid sealing system is provided for use in a crystal puller for growing a monocrystalline ingot. The crystal puller has a housing, a fluid flow path contained in the housing, and a fluid passage through a wall of the housing for passage of fluid. The fluid sealing system includes a fluid connector head adapted for connection to the fluid passage and to the fluid flow path to establish fluid communication between the fluid flow path and the outside of the housing. The head has a port adapted for fluid communication with the fluid passage through the wall of the housing. First and second seals around the port are adapted for sealing engagement with the head. A space is defined generally between the first and second seals, and a leak detector is arranged to monitor the space for detecting fluid leakage past at least one of the seals.

Abstract: A fluid sealing system is provided for use in a crystal puller for growing a monocrystalline ingot. The crystal puller has a housing, a fluid flow path contained in the housing, and a fluid passage through a wall of the housing for passage of fluid. The fluid sealing system includes a fluid connector head adapted for connection to the fluid passage and to the fluid flow path to establish fluid communication between the fluid flow path and the outside of the housing. The head has a port adapted for fluid communication with the fluid passage through the wall of the housing. First and second seals around the port are adapted for sealing engagement with the head. A space is defined generally between the first and second seals, and a leak detector is arranged to monitor the space for detecting fluid leakage past at least one of the seals.

Abstract: A crystal puller and method for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. In one embodiment, the first heater is powered when the ingot is pulled upward to a first axial position above the surface of the molten silicon and the second heater is powered when the ingot is pulled upward to a second axial position above the first axial position. In another embodiment the first and second heaters are powered until the ingot is separated from the molten silicon and then the heating power output of the first and second heaters is reduced to substantially increase the cooling rate at which the ingot is cooled. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

Abstract: A crystal puller for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

Abstract: A crystal puller for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

Abstract: A crystal puller and method for growing monocrystalline silicon ingots includes first and second electrical resistance heaters in the crystal puller in longitudinal, closely spaced relationship with each other to radiate heat toward the ingot as the ingot is pulled upward within the housing. In one embodiment, the first heater is powered when the ingot is pulled upward to a first axial position above the surface of the molten silicon and the second heater is powered when the ingot is pulled upward to a second axial position above the first axial position. In another embodiment the first and second heaters are powered until the ingot is separated from the molten silicon and then the heating power output of the first and second heaters is reduced to substantially increase the cooling rate at which the ingot is cooled. An adapter mounting the heaters may also be provided for adapting existing crystal pullers to incorporate the heaters.

Abstract: An electrode assembly for use with an electrical resistance heater mounted in a housing of a crystal puller used for growing monocrystalline silicon ingots according to the Czochralski method comprises an electrode having a first end in electrical connection with the heater within the housing and an outer end. The electrode extends through the crystal puller housing such that the outer end of the electrode is generally external of the housing. The portion of the electrode within the housing is generally solid in cross-section along the entire length of said portion and free of any internal cooling passages. An electrical conductor is electrically connected to a portion of the electrode extending externally of the housing for supplying electrical current to the electrode from a source of electrical current for conduction inward along the electrode to the heater located in the housing.

Abstract: An electrical resistance heater for use in a crystal puller used for growing monocrystalline ingots according to the Czochralski method comprises a heating element sized and shaped for placement in the housing of the crystal puller for radiating heat within the housing. The heating element has heating segments arranged in a generally side-by-side relationship and electrically connected together. Each heating segment comprises a web and a flange projecting outwardly from the web in non-coplanar relationship therewith. This reduces the cross-sectional area of the heating segment for increasing the electrical resistance and power output of the heater while providing desired structural rigidity.

Abstract: A device for supporting a semiconductor ingot during growth of the ingot. The device includes a chuck in which is mounted a seed. The seed includes an elongate rod having one end projecting from the chuck for growth of the ingot thereon. A latch pin secures the seed in the chuck in a removable manner. The chuck is suspended in a semiconductor furnace. The chuck, seed and latch pin and interengaged in a manner to reduce forming flaws in the ingot.

Abstract: A cable assembly for supporting a seed chuck in a crystal puller to grow monocrystalline ingots according to the Czochralski method comprises a cable adapted for generally vertical movement within the crystal puller relative to a source of molten material. A chuck support is connected to an end of the cable within the crystal puller and is configured for supporting the seed chuck. The chuck support is constructed of a refractory material having a high creep rupture strength and comprises an elongate shank having an upper end and a lower end and an enlarged end member at the lower end of the shank. A coupling is constructed of a malleable material and is deformable into engagement with the end of the cable and the upper end of the shank to join the chuck support to the cable.

Abstract: An apparatus for pulling a monocrystalline ingot from a semiconductor source material located within a growth chamber as the ingot is grown on a seed crystal according to the Czochralski method. The apparatus comprises a drum, a chuck constructed for holding the seed crystal and the ingot, and a cable having a first end connected to the drum, a second end connected to the chuck and a portion wound around the drum. The portion of the cable wound around the drum exerts a normal force on a circumferential surface of the drum corresponding to the tension in the cable. The drum and cable interact to produce a friction force resisting sliding movement of the cable relative to the drum in a direction lengthwise of the cable. The drum is capable of unwinding cable from the drum thereby to let out the cable and lower the chuck, and capable of winding the cable around the drum thereby to reel in the cable and draw the chuck upwardly.

Abstract: Combination machine tool appartaus and pallet changing system includes a single pallet changer for changing both work pieces at a work piece machining station on the machine tool and tools at a tool storage station on the machine tool. The work piece machining station and tool storage station are offset approximately 45.degree. from each other as measured from the rotational axis of the pallet changer, which is provided with additional retractable rotational stops for locating the pallet changer at these additional 45.degree. indexing positions. Also, the tool storage station is located forwardly of the work piece machining station, thus allowing the pallet changer to be positioned closer to the front of the machine tool in the region of the work piece machining station without interfering with the indexing movement of the pallet changer between stations.

Abstract: Arbor assembly includes a fixed arbor section and a removable arbor section each including a pair of longitudinally spaced apart cylindrical pilot surfaces of different diameters spaced the same distance apart. Between the pilot surfaces on each arbor section is a guiding taper to aid in aligning the pilot surfaces so that such pilot surfaces freely engage each other during assembly. Longitudinally spaced locating tapers on the arbor sections are engageable by longitudinally spaced bearing surfaces on the workpiece for concentrically locating the workpiece between the arbor sections. A floating collet transmits a clamping force to the removable arbor section to urge the removable arbor section toward the fixed arbor section to clamp the workpiece between such arbor sections while the collet is in a free state without any flexing of the collet fingers.

Abstract: Combination machine tool apparatus and pallet changing system includes a single changer for changing both work pieces at a work piece machining station on the machine tool and tools at a tool storage station on the machine tool. The work piece machining station and tool storage station are offset approximately 45.degree. from each other as measured from the rotational axis of the pallet changer, which is provided with additional retractable rotational stops for locating the pallet changer at these additional 45.degree. indexing positions. Also, the tool storage station is located forwardly of the work piece machining station, thus allowing the pallet changer to be positioned closer to the front of the machine tool in the region of the work piece machining station without interfering with the indexing movement of the pallet changer between stations.