Patents by Inventor Carl Patrik Theodor Svensson
Carl Patrik Theodor Svensson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10304992Abstract: A device includes a support including at least a first area and a second area, and a plurality of first light emitting devices located over the first area of the support, each first light emitting device containing a first growth template including a first nanostructure, and each first light emitting device has a first peak emission wavelength. The device also includes a plurality of second light emitting devices located over the second area of the support, each second light emitting device containing a second growth template including a second nanostructure, and each second light emitting device has a second peak emission wavelength different from the first peak emission wavelength. Each first growth template differs from each second growth template.Type: GrantFiled: June 27, 2017Date of Patent: May 28, 2019Assignee: GLO ABInventors: Jonas Ohlsson, Carl Patrik Theodor Svensson
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Patent number: 10038115Abstract: A LED structure includes a support and a plurality of nanowires located on the support, where each nanowire includes a tip and a sidewall. A method of making the LED structure includes reducing or eliminating the conductivity of the tips of the nanowires compared to the conductivity of the sidewalls during or after creation of the nanowires.Type: GrantFiled: June 27, 2017Date of Patent: July 31, 2018Assignee: GLO ABInventors: Carl Patrik Theodor Svensson, Nathan Gardner
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Publication number: 20170301825Abstract: A device includes a support including at least a first area and a second area, and a plurality of first light emitting devices located over the first area of the support, each first light emitting device containing a first growth template including a first nanostructure, and each first light emitting device has a first peak emission wavelength. The device also includes a plurality of second light emitting devices located over the second area of the support, each second light emitting device containing a second growth template including a second nanostructure, and each second light emitting device has a second peak emission wavelength different from the first peak emission wavelength. Each first growth template differs from each second growth template.Type: ApplicationFiled: June 27, 2017Publication date: October 19, 2017Inventors: Jonas Ohlsson, Carl Patrik Theodor Svensson
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Publication number: 20170301823Abstract: A LED structure includes a support and a plurality of nanowires located on the support, where each nanowire includes a tip and a sidewall. A method of making the LED structure includes reducing or eliminating the conductivity of the tips of the nanowires compared to the conductivity of the sidewalls during or after creation of the nanowires.Type: ApplicationFiled: June 27, 2017Publication date: October 19, 2017Inventors: Carl Patrik Theodor Svensson, Nathan Gardner
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Patent number: 9748437Abstract: A device includes a support including at least a first area and a second area, and a plurality of first light emitting devices located over the first area of the support, each first light emitting device containing a first growth template including a first nanostructure, and each first light emitting device has a first peak emission wavelength. The device also includes a plurality of second light emitting devices located over the second area of the support, each second light emitting device containing a second growth template including a second nanostructure, and each second light emitting device has a second peak emission wavelength different from the first peak emission wavelength. Each first growth template differs from each second growth template.Type: GrantFiled: April 16, 2015Date of Patent: August 29, 2017Assignee: GLO ABInventors: Jonas Ohlsson, Carl Patrik Theodor Svensson
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Patent number: 9722135Abstract: A LED structure includes a support and a plurality of nanowires located on the support, where each nanowire includes a tip and a sidewall. A method of making the LED structure includes reducing or eliminating the conductivity of the tips of the nanowires compared to the conductivity of the sidewalls during or after creation of the nanowires.Type: GrantFiled: October 9, 2015Date of Patent: August 1, 2017Assignee: GLO ABInventors: Carl Patrik Theodor Svensson, Nathan Gardner
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Publication number: 20160099379Abstract: A LED structure includes a support and a plurality of nanowires located on the support, where each nanowire includes a tip and a sidewall. A method of making the LED structure includes reducing or eliminating the conductivity of the tips of the nanowires compared to the conductivity of the sidewalls during or after creation of the nanowires.Type: ApplicationFiled: October 9, 2015Publication date: April 7, 2016Inventors: Carl Patrik Theodor Svensson, Nathan Gardner
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Patent number: 9196792Abstract: A semiconductor device includes a plurality of first conductivity type semiconductor nanowire cores located over a support, and an insulating mask layer located over the support. The nanowire cores include semiconductor nanowires epitaxially extending from portions of a semiconductor surface of the support exposed through openings in the insulating mask layer. The device also includes a plurality of second conductivity type semiconductor shells extending over and around the respective nanowire cores, a first electrode layer that contacts the second conductivity type semiconductor shells and extends into spaces between the semiconductor shells, and an insulating layer located between the insulating mask layer and the first electrode in the spaces between the semiconductor shells.Type: GrantFiled: June 6, 2014Date of Patent: November 24, 2015Assignee: GLO ABInventors: Scott Brad Herner, Cynthia Lemay, Carl Patrik Theodor Svensson, Linda Romano
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Patent number: 9196787Abstract: A semiconductor device includes a plurality of first conductivity type semiconductor nanowire cores located over a support and extending from portions of a semiconductor surface of the support exposed through openings in the insulating mask layer, and a plurality of semiconductor shells extending over the respective nanowire cores. Each of the plurality of semiconductor shells includes at least one semiconductor interior shell extending around the respective one of the plurality nanowire cores, and a second conductivity type semiconductor outer shell extending around the at least one semiconductor interior shell. A first electrode layer contacts the second conductivity type semiconductor outer shell of the plurality of semiconductor shells and extends into spaces between the semiconductor shells.Type: GrantFiled: June 6, 2014Date of Patent: November 24, 2015Assignee: GLO ABInventors: Carl Patrik Theodor Svensson, Linda Romano, Scott Brad Herner, Cynthia Lemay
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Patent number: 9166106Abstract: A LED structure includes a support and a plurality of nanowires located on the support, where each nanowire includes a tip and a sidewall. A method of making the LED structure includes reducing or eliminating the conductivity of the tips of the nanowires compared to the conductivity of the sidewalls during or after creation of the nanowires.Type: GrantFiled: October 22, 2013Date of Patent: October 20, 2015Assignee: GLO ABInventors: Carl Patrik Theodor Svensson, Nathan Gardner
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Publication number: 20150221814Abstract: A device includes a support including at least a first area and a second area, and a plurality of first light emitting devices located over the first area of the support, each first light emitting device containing a first growth template including a first nanostructure, and each first light emitting device has a first peak emission wavelength. The device also includes a plurality of second light emitting devices located over the second area of the support, each second light emitting device containing a second growth template including a second nanostructure, and each second light emitting device has a second peak emission wavelength different from the first peak emission wavelength. Each first growth template differs from each second growth template.Type: ApplicationFiled: April 16, 2015Publication date: August 6, 2015Inventors: Jonas Ohlsson, Carl Patrik Theodor Svensson
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Patent number: 9054233Abstract: A device includes a support including at least a first area and a second area, and a plurality of first light emitting devices located over the first area of the support, each first light emitting device containing a first growth template including a first nanostructure, and each first light emitting device has a first peak emission wavelength. The device also includes a plurality of second light emitting devices located over the second area of the support, each second light emitting device containing a second growth template including a second nanostructure, and each second light emitting device has a second peak emission wavelength different from the first peak emission wavelength. Each first growth template differs from each second growth template.Type: GrantFiled: June 6, 2014Date of Patent: June 9, 2015Assignee: GLO ABInventors: Jonas Ohlsson, Carl Patrik Theodor Svensson
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Publication number: 20140363912Abstract: A device includes a support including at least a first area and a second area, and a plurality of first light emitting devices located over the first area of the support, each first light emitting device containing a first growth template including a first nanostructure, and each first light emitting device has a first peak emission wavelength. The device also includes a plurality of second light emitting devices located over the second area of the support, each second light emitting device containing a second growth template including a second nanostructure, and each second light emitting device has a second peak emission wavelength different from the first peak emission wavelength. Each first growth template differs from each second growth template.Type: ApplicationFiled: June 6, 2014Publication date: December 11, 2014Inventors: Jonas Ohlsson, Carl Patrik Theodor Svensson
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Publication number: 20140361244Abstract: A semiconductor device includes a plurality of first conductivity type semiconductor nanowire cores located over a support and extending from portions of a semiconductor surface of the support exposed through openings in the insulating mask layer, and a plurality of semiconductor shells extending over the respective nanowire cores. Each of the plurality of semiconductor shells includes at least one semiconductor interior shell extending around the respective one of the plurality nanowire cores, and a second conductivity type semiconductor outer shell extending around the at least one semiconductor interior shell. A first electrode layer contacts the second conductivity type semiconductor outer shell of the plurality of semiconductor shells and extends into spaces between the semiconductor shells.Type: ApplicationFiled: June 6, 2014Publication date: December 11, 2014Inventors: Carl Patrik Theodor Svensson, Linda Romano, Scott Brad Herner, Cynthia Lemay
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Publication number: 20140284551Abstract: A semiconductor device includes a plurality of first conductivity type semiconductor nanowire cores located over a support, and an insulating mask layer located over the support. The nanowire cores include semiconductor nanowires epitaxially extending from portions of a semiconductor surface of the support exposed through openings in the insulating mask layer. The device also includes a plurality of second conductivity type semiconductor shells extending over and around the respective nanowire cores, a first electrode layer that contacts the second conductivity type semiconductor shells and extends into spaces between the semiconductor shells, and an insulating layer located between the insulating mask layer and the first electrode in the spaces between the semiconductor shells.Type: ApplicationFiled: June 6, 2014Publication date: September 25, 2014Inventors: Scott Brad Herner, Cynthia Lemay, Carl Patrik Theodor Svensson, Linda Romano
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Publication number: 20140138620Abstract: A LED structure includes a support and a plurality of nanowires located on the support, where each nanowire includes a tip and a sidewall. A method of making the LED structure includes reducing or eliminating the conductivity of the tips of the nanowires compared to the conductivity of the sidewalls during or after creation of the nanowires.Type: ApplicationFiled: October 22, 2013Publication date: May 22, 2014Applicant: Glo ABInventors: Carl Patrik Theodor Svensson, Nathan Gardner