Patents by Inventor Carmel Sahar

Carmel Sahar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gallium nitride based ultra-violet sensor with intrinsic amplification and method of operating same
    Patent number: 11081613
    Abstract: A UV sensor includes a GaN stack including a low-resistance GaN layer formed over a nucleation layer, and a high-resistance GaN layer formed over the low-resistance GaN layer, wherein a 2DEG conductive channel exists at the upper surface of the high-resistance GaN layer. An AlGaN layer is formed over the upper surface of the high-resistance GaN layer. A source contact and a drain contact extend through the AlGaN layer and contact the upper surface of the high-resistance GaN layer (and are thereby electrically coupled to the 2DEG channel). A drain depletion region extends entirely from the upper surface of the high-resistance GaN layer to the low-resistance GaN layer under the drain contact. An electrical current between the source and drain contacts is a function of UV light received by the GaN stack. An electrode is connected to the low-resistance GaN layer to allow for electrical refresh of the UV sensor.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: August 3, 2021
    Assignee: Tower Semiconductor Ltd.
    Inventors: Yakov Roizin, Carmel Sahar, Victor Kairys, Ruth Shima-edelstein
  • Gallium Nitride Based Ultra-Violet Sensor With Intrinsic Amplification and Method of Operating Same
    Publication number: 20210043793
    Abstract: A UV sensor includes a GaN stack including a low-resistance GaN layer formed over a nucleation layer, and a high-resistance GaN layer formed over the low-resistance GaN layer, wherein a 2DEG conductive channel exists at the upper surface of the high-resistance GaN layer. An AlGaN layer is formed over the upper surface of the high-resistance GaN layer. A source contact and a drain contact extend through the AlGaN layer and contact the upper surface of the high-resistance GaN layer (and are thereby electrically coupled to the 2DEG channel). A drain depletion region extends entirely from the upper surface of the high-resistance GaN layer to the low-resistance GaN layer under the drain contact. An electrical current between the source and drain contacts is a function of UV light received by the GaN stack. An electrode is connected to the low-resistance GaN layer to allow for electrical refresh of the UV sensor.
    Type: Application
    Filed: August 8, 2019
    Publication date: February 11, 2021
    Inventors: Yakov Roizin, Carmel Sahar, Victor Kairys, Ruth Shima-edelstein