Patents by Inventor Carmela Cupeta
Carmela Cupeta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230005848Abstract: A method of manufacturing a redistribution layer includes: forming an insulating layer on a wafer, delimited by a top surface and a bottom surface in contact with the wafer; forming a conductive body above the top surface of the insulating layer; forming a first coating region extending around and above the conductive body, in contact with the conductive body, and in contact with the top surface of the insulating layer in correspondence of a bottom surface of the first coating region; applying a thermal treatment to the wafer in order to modify a residual stress of the first coating region, forming a gap between the bottom surface of the first coating region and the top surface of the insulating layer; forming, after applying the thermal treatment, a second coating region extending around and above the first coating region, filling said gap and completely sealing the first coating region.Type: ApplicationFiled: September 14, 2022Publication date: January 5, 2023Applicant: STMICROELECTRONICS S.r.l.Inventors: Paolo COLPANI, Samuele SCIARRILLO, Ivan VENEGONI, Francesco Maria PIPIA, Simone BOSSI, Carmela CUPETA
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Patent number: 11469194Abstract: A method of manufacturing a redistribution layer includes: forming an insulating layer on a wafer, delimited by a top surface and a bottom surface in contact with the wafer; forming a conductive body above the top surface of the insulating layer; forming a first coating region extending around and above the conductive body, in contact with the conductive body, and in contact with the top surface of the insulating layer in correspondence of a bottom surface of the first coating region; applying a thermal treatment to the wafer in order to modify a residual stress of the first coating region, forming a gap between the bottom surface of the first coating region and the top surface of the insulating layer; forming, after applying the thermal treatment, a second coating region extending around and above the first coating region, filling said gap and completely sealing the first coating region.Type: GrantFiled: August 7, 2019Date of Patent: October 11, 2022Assignee: STMICROELECTRONICS S.R.L.Inventors: Paolo Colpani, Samuele Sciarrillo, Ivan Venegoni, Francesco Maria Pipia, Simone Bossi, Carmela Cupeta
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Publication number: 20200051935Abstract: A method of manufacturing a redistribution layer includes: forming an insulating layer on a wafer, delimited by a top surface and a bottom surface in contact with the wafer; forming a conductive body above the top surface of the insulating layer; forming a first coating region extending around and above the conductive body, in contact with the conductive body, and in contact with the top surface of the insulating layer in correspondence of a bottom surface of the first coating region; applying a thermal treatment to the wafer in order to modify a residual stress of the first coating region, forming a gap between the bottom surface of the first coating region and the top surface of the insulating layer; forming, after applying the thermal treatment, a second coating region extending around and above the first coating region, filling said gap and completely sealing the first coating region.Type: ApplicationFiled: August 7, 2019Publication date: February 13, 2020Inventors: Michele MOLGG, Cosimo CIMINELLI, Paolo COLPANI, Samuele SCIARRILLO, Ivan VENEGONI, Francesco Maria PIPIA, Simone BOSSI, Carmela CUPETA
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Patent number: 10483463Abstract: Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.Type: GrantFiled: September 4, 2018Date of Patent: November 19, 2019Assignee: Micron Technology, Inc.Inventors: Andrea Redaelli, Giorgio Servalli, Carmela Cupeta, Fabio Pellizzer
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Publication number: 20190019949Abstract: Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.Type: ApplicationFiled: September 4, 2018Publication date: January 17, 2019Applicant: Micron Technology, Inc.Inventors: Andrea Redaelli, Giorgio Servalli, Carmela Cupeta, Fabio Pellizzer
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Patent number: 10153433Abstract: Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.Type: GrantFiled: August 7, 2017Date of Patent: December 11, 2018Assignee: Micron Technology, Inc.Inventors: Andrea Redaelli, Giorgio Servalli, Carmela Cupeta, Fabio Pellizzer
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Publication number: 20170338411Abstract: Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.Type: ApplicationFiled: August 7, 2017Publication date: November 23, 2017Applicant: Micron Technology, Inc.Inventors: Andrea Redaelli, Giorgio Servalli, Carmela Cupeta, Fabio Pellizzer
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Patent number: 9755145Abstract: Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.Type: GrantFiled: September 28, 2016Date of Patent: September 5, 2017Assignee: Micron Technology, Inc.Inventors: Andrea Redaelli, Giorgio Servalli, Carmela Cupeta, Fabio Pellizzer
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Patent number: 9577188Abstract: Some embodiments include semiconductor constructions having stacks containing electrically conductive material over dielectric material. Programmable material structures are directly against both the electrically conductive material and the dielectric material along sidewall surfaces of the stacks. Electrode material electrically coupled with the electrically conductive material of the stacks. Some embodiments include methods of forming memory cells in which a programmable material plate is formed along a sidewall surface of a stack containing electrically conductive material and dielectric material.Type: GrantFiled: September 14, 2015Date of Patent: February 21, 2017Assignee: Micron Technology, Inc.Inventors: Carmela Cupeta, Andrea Redaelli, Paolo Giuseppe Cappelletti
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Patent number: 9570681Abstract: A resistive random access memory may include a memory array and a periphery around the memory array. Decoders in the periphery may be coupled to address lines in the array by forming a metallization in the periphery and the array at the same time using the same metal deposition. The metallization may form row lines in the array.Type: GrantFiled: September 19, 2014Date of Patent: February 14, 2017Assignee: Micron Technology, Inc.Inventors: Cristina Casellato, Carmela Cupeta, Michele Magistretti, Fabio Pellizzer, Roberto Somaschini
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Publication number: 20170018708Abstract: Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.Type: ApplicationFiled: September 28, 2016Publication date: January 19, 2017Inventors: Andrea Redaelli, Giorgio Servalli, Carmela Cupeta, Fabio Pellizzer
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Patent number: 9484536Abstract: Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.Type: GrantFiled: July 14, 2015Date of Patent: November 1, 2016Assignee: Micron Technology, Inc.Inventors: Andrea Redaelli, Giorgio Servalli, Carmela Cupeta, Fabio Pellizzer
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Publication number: 20160056375Abstract: Some embodiments include semiconductor constructions having stacks containing electrically conductive material over dielectric material. Programmable material structures are directly against both the electrically conductive material and the dielectric material along sidewall surfaces of the stacks. Electrode material electrically coupled with the electrically conductive material of the stacks. Some embodiments include methods of forming memory cells in which a programmable material plate is formed along a sidewall surface of a stack containing electrically conductive material and dielectric material.Type: ApplicationFiled: September 14, 2015Publication date: February 25, 2016Inventors: Carmela Cupeta, Andrea Redaelli, Paolo Giuseppe Cappelletti
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Publication number: 20150325627Abstract: Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.Type: ApplicationFiled: July 14, 2015Publication date: November 12, 2015Inventors: Andrea Redaelli, Giorgio Servalli, Carmela Cupeta, Fabio Pellizzer
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Patent number: 9172037Abstract: Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a conductive material in a number of vias and on a substrate structure, the conductive material to serve as a number of conductive lines of the array and coupling the number of conductive lines to the array circuitry.Type: GrantFiled: April 14, 2014Date of Patent: October 27, 2015Assignee: Micron Technology, Inc.Inventors: Roberto Somaschini, Fabio Pellizzer, Carmela Cupeta, Nicola Nastasi
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Patent number: 9166159Abstract: Some embodiments include semiconductor constructions having stacks containing electrically conductive material over dielectric material. Programmable material structures are directly against both the electrically conductive material and the dielectric material along sidewall surfaces of the stacks. Electrode material electrically coupled with the electrically conductive material of the stacks. Some embodiments include methods of forming memory cells in which a programmable material plate is formed along a sidewall surface of a stack containing electrically conductive material and dielectric material.Type: GrantFiled: May 23, 2013Date of Patent: October 20, 2015Assignee: Micron Technology, Inc.Inventors: Carmela Cupeta, Andrea Redaelli, Paolo Giuseppe Cappelletti
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Patent number: 9112150Abstract: Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.Type: GrantFiled: July 23, 2013Date of Patent: August 18, 2015Assignee: Micron Technology, Inc.Inventors: Andrea Redaelli, Giorgio Servalli, Carmela Cupeta, Fabio Pellizzer
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Publication number: 20150044832Abstract: A resistive random access memory may include a memory array and a periphery around the memory array. Decoders in the periphery may be coupled to address lines in the array by forming a metallization in the periphery and the array at the same time using the same metal deposition. The metallization may form row lines in the array.Type: ApplicationFiled: September 19, 2014Publication date: February 12, 2015Inventors: Cristina Casellato, Carmela Cupeta, Michele Magistretti, Fabio Pellizzer, Roberto Somaschini
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Publication number: 20150028283Abstract: Some embodiments include methods of forming memory cells. Heater structures are formed over an array of electrical nodes, and phase change material is formed across the heater structures. The phase change material is patterned into a plurality of confined structures, with the confined structures being in one-to-one correspondence with the heater structures and being spaced from one another by one or more insulative materials that entirely laterally surround each of the confined structures. Some embodiments include memory arrays having heater structures over an array of electrical nodes. Confined phase change material structures are over the heater structures and in one-to-one correspondence with the heater structures. The confined phase change material structures are spaced from one another by one or more insulative materials that entirely laterally surround each of the confined phase change material structures.Type: ApplicationFiled: July 23, 2013Publication date: January 29, 2015Applicant: Micron Technology, Inc.Inventors: Andrea Redaelli, Giorgio Servalli, Carmela Cupeta, Fabio Pellizzer
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Publication number: 20140346429Abstract: Some embodiments include semiconductor constructions having stacks containing electrically conductive material over dielectric material. Programmable material structures are directly against both the electrically conductive material and the dielectric material along sidewall surfaces of the stacks. Electrode material electrically coupled with the electrically conductive material of the stacks. Some embodiments include methods of forming memory cells in which a programmable material plate is formed along a sidewall surface of a stack containing electrically conductive material and dielectric material.Type: ApplicationFiled: May 23, 2013Publication date: November 27, 2014Inventors: Carmela Cupeta, Andrea Redaelli, Paolo Giuseppe Cappelletti