Patents by Inventor Carmelo Margo

Carmelo Margo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5342793
    Abstract: The metallization of the back of the semiconductor substrate is obtained by depositing a series of metal layers, after ion implantation of dopant on the interface with the first layer. The step of ion implantation is followed by the deposition of one or more metal layers of the aforesaid series, and then by thermal annealing under vacuum or in an inert atmosphere, at a temperature considerably lower than 500.degree. C. and for a period considerably shorter than 60 minutes.
    Type: Grant
    Filed: July 9, 1993
    Date of Patent: August 30, 1994
    Assignee: SGS-Thomson Microelectronics, S.R.L.
    Inventors: Antonello Santangelo, Carmelo Margo, Paolo Lanza