Patents by Inventor Caroline Whelan
Caroline Whelan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240073589Abstract: An audio device includes a first speaker and a second speaker. A front surface of a membrane of the second speaker faces a rear surface of a membrane of the first speaker. The membrane of the first speaker moves in an opposite direction than the membrane of the second speaker when the audio device outputs audio content. This configuration maintains isobaric pressure for a back volume shared between the first speaker and the second speaker, reducing vibration of the audio device when outputting audio content.Type: ApplicationFiled: December 20, 2022Publication date: February 29, 2024Inventors: Rex Pinegar Price, Alan Ng, Calvin Bernard Shaw, Peter Mikael Mogren, Caroline Whelan, Trang Fisher, MohanRaj Manoharan
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Patent number: 8470709Abstract: The present invention relates to a method for forming metal-silicide catalyst nanoparticles with controllable diameter. The method according to embodiments of the invention leads to the formation of ‘active’ metal-suicide catalyst nanoparticles, with which is meant that they are suitable to be used as a catalyst in carbon nanotube growth. The nano-particles are formed on the surface of a substrate or in case the substrate is a porous substrate within the surface of the inner pores of a substrate. The metal-silicide nanoparticles can be Co-silicide, Ni-silicide or Fe-silicide particles. The present invention relates also to a method to form carbon nanotubes (CNT) on metal-silicide nanoparticles, the metal-silicide containing particles hereby acting as catalyst during the growth process, e.g. during the chemical vapor deposition (CVD) process. Starting from very defined metal-containing nanoparticles as catalysts, the diameter of grown CNT can be well controlled and a homogeneous set of CNT will be obtained.Type: GrantFiled: June 16, 2006Date of Patent: June 25, 2013Assignees: IMEC, Katholieke Universitet Leuven, K.U. Leuven R&DInventors: Santiago Cruz Esconjauregui, Caroline Whelan, Karen Maex
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Patent number: 8399986Abstract: A method of positioning at least 2 chips simultaneously on a substrate by parallel stochastic assembly in a first liquid is disclosed. In one aspect, the chips are directed to target sites on the substrate within the first liquid. The target sites are covered with a second liquid. The second liquid and the first liquid are immiscible. The chips are attracting the first liquid. A predetermined surface is chosen or treated on each chip such that it is selectively attracted by the second liquid and attracting the first liquid.Type: GrantFiled: March 25, 2011Date of Patent: March 19, 2013Assignees: IMEC, Katholieke Universiteit LeuvenInventors: Massimo Mastrangeli, Caroline Whelan, Wouter Ruythooren
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Publication number: 20110233791Abstract: A method of positioning at least 2 chips simultaneously on a substrate by parallel stochastic assembly in a first liquid is disclosed. In one aspect, the chips are directed to target sites on the substrate within the first liquid. The target sites are covered with a second liquid. The second liquid and the first liquid are immiscible. The chips are attracting the first liquid. A predetermined surface is chosen or treated on each chip such that it is selectively attracted by the second liquid and attracting the first liquid.Type: ApplicationFiled: March 25, 2011Publication date: September 29, 2011Applicants: IMEC, Katholieke Universiteit LeuvenInventors: Massimo Mastrangeli, Caroline Whelan, Wouter Ruythooren
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Publication number: 20100285656Abstract: The present invention relates to a method for forming metal-silicide catalyst nanoparticles with controllable diameter. The method according to embodiments of the invention leads to the formation of ‘active’ metal-suicide catalyst nanoparticles, with which is meant that they are suitable to be used as a catalyst in carbon nanotube growth. The nano-particles are formed on the surface of a substrate or in case the substrate is a porous substrate within the surface of the inner pores of a substrate. The metal-silicide nanoparticles can be Co-silicide, Ni-silicide or Fe-silicide particles. The present invention relates also to a method to form carbon nanotubes (CNT) on metal-silicide nanoparticles, the metal-silicide containing particles hereby acting as catalyst during the growth process, e.g. during the chemical vapour deposition (CVD) process. Starting from very defined metal-containing nanoparticles as catalysts, the diameter of grown CNT can be well controlled and a homogeneous set of CNT will be obtained.Type: ApplicationFiled: June 16, 2006Publication date: November 11, 2010Applicant: Interuniversitair Microelektronica Centrum (IMEC)Inventors: Santiago Cruz Esconjauregui, Caroline Whelan, Karen Maex
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Patent number: 7790600Abstract: A method is provided for incorporating zeolite crystals in patterned structures, the zeolite crystals having pores (channels) with an orientation which is defined by the topology of the zeolite crystal type and the geometry of the patterned structure, resulting in pores parallel with the length axis of the patterned structures. The patterned structures may be vias (vertical contacts) and trenches (horizontal lines) in a semiconductor substrate. These zeolite crystals can advantageously be used for dense and aligned nanocarbon growth or in other words growth of carbon nanostructures such as carbon nanotubes (CNT) within the pores of the zeolite structure. The growth of CNT is achieved within the porous structure of the zeolite crystals whereby the pores can be defined as confined spaces (channels) in nanometer dimensions acting as a micro-reactor for CNT growth.Type: GrantFiled: January 22, 2009Date of Patent: September 7, 2010Assignees: IMEC, Katholieke Universiteit LeuvenInventors: Pierre Jacobs, Bert Sels, Jasper Van Noyen, Caroline Whelan, Karen Maex, Filip de Clippel
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Patent number: 7728436Abstract: A method for selective deposition of self-assembled monolayers to the surface of a substrate for use as a diffusion barrier layer in interconnect structures is provided comprising the steps of depositing a first self-assembled monolayer to said surface, depositing a second self-assembled monolayer to the non-covered parts of said surface and subsequently heating said substrate to remove the first self-assembled monolayer. The method of selective deposition of self-assembled monolayers is applied for the use as diffusion barrier layers in a (dual) damascene structure for integrated circuits.Type: GrantFiled: January 9, 2008Date of Patent: June 1, 2010Assignees: IMEC, Texas Instruments Inc.Inventors: Caroline Whelan, Victor Sutcliffe
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Publication number: 20100047152Abstract: The present invention provides a method for forming at least one carbon nanotube (16) by using metal-free catalyst nanoparticles (14), for example Si or Ge comprising nanoparticles. The method uses the step of decomposing a carbon source gas to form carbon fragments which then recombine at the metal-free catalyst nanoparticles (14) to grow carbon nanotubes (16). The method according to embodiments of the invention leads to carbon nanotubes (16) which do not comprise metal impurities.Type: ApplicationFiled: September 21, 2007Publication date: February 25, 2010Inventors: Caroline Whelan, Santiago Cruz Esconjauregui
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Publication number: 20090243103Abstract: A method is provided for incorporating zeolite crystals in patterned structures, the zeolite crystals having pores (channels) with an orientation which is defined by the topology of the zeolite crystal type and the geometry of the patterned structure, resulting in pores parallel with the length axis of the patterned structures. The patterned structures may be vias (vertical contacts) and trenches (horizontal lines) in a semiconductor substrate. These zeolite crystals can advantageously be used for dense and aligned nanocarbon growth or in other words growth of carbon nanostructures such as carbon nanotubes (CNT) within the pores of the zeolite structure. The growth of CNT is achieved within the porous structure of the zeolite crystals whereby the pores can be defined as confined spaces (channels) in nanometer dimensions acting as a micro-reactor for CNT growth.Type: ApplicationFiled: January 22, 2009Publication date: October 1, 2009Applicants: Interuniversitair Microelektronica Centrum vzw (IMEC), Katholieke Universiteit Leuven, K.U. Leuven R&DInventors: Pierre Jacobs, Bert Sels, Jasper Van Noyen, Caroline Whelan, Karen Maex, Filip de Clippel
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Publication number: 20090131245Abstract: A method for forming catalyst nanoparticles on a substrate and a method for forming elongate nanostructures on a substrate using the nanoparticles as a catalyst are provided. The methods may advantageously be used in, for example, semiconductor processing. The methods are scalable and fully compatible with existing semiconductor processing technology. Furthermore, the methods allow forming catalyst particles and elongate nanostructures at predetermined locations on a substrate.Type: ApplicationFiled: November 6, 2007Publication date: May 21, 2009Applicant: Interuniversitair Microelektronica Centrum (IMEC)Inventors: Santiago Cruz Esconjauregui, Caroline Whelan
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Publication number: 20080105979Abstract: A method for selective deposition of self-assembled monolayers to the surface of a substrate for use as a diffusion barrier layer in interconnect structures is provided comprising the steps of depositing a first self-assembled monolayer to said surface, depositing a second self-assembled monolayer to the non-covered parts of said surface and subsequently heating said substrate to remove the first self-assembled monolayer. The method of selective deposition of self-assembled monolayers is applied for the use as diffusion barrier layers in a (dual) damascene structure for integrated circuits.Type: ApplicationFiled: January 9, 2008Publication date: May 8, 2008Applicants: Interuniversitair Microelektronica Centrum (IMEC), Texas Instruments Inc.Inventors: Caroline Whelan, Victor Sutcliffe
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Patent number: 7368377Abstract: A method for selective deposition of self-assembled monolayers to the surface of a substrate for use as a diffusion barrier layer in interconnect structures is provided comprising the steps of depositing a first self-assembled monolayer to said surface, depositing a second self-assembled monolayer to the non-covered parts of said surface and subsequently heating said substrate to remove the first self-assembled monolayer. The method of selective deposition of self-assembled monolayers is applied for the use as diffusion barrier layers in a (dual) damascene structure for integrated circuits.Type: GrantFiled: December 7, 2005Date of Patent: May 6, 2008Assignees: Interuniversitair Microelektronica Centrum (IMEC) vzw, Texas Instruments Inc.Inventors: Caroline Whelan, Victor Sutcliffe
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Publication number: 20060128142Abstract: A method for selective deposition of self-assembled monolayers to the surface of a substrate for use as a diffusion barrier layer in interconnect structures is provided comprising the steps of depositing a first self-assembled monolayer to said surface, depositing a second self-assembled monolayer to the non-covered parts of said surface and subsequently heating said substrate to remove the first self-assembled monolayer. The method of selective deposition of self-assembled monolayers is applied for the use as diffusion barrier layers in a (dual) damascene structure for integrated circuits.Type: ApplicationFiled: December 7, 2005Publication date: June 15, 2006Inventors: Caroline Whelan, Victor Sutcliffe