Abstract: A position measurement system including a first interferometer and a second interferometer arranged to determine a distance of the object in a first direction when the object is in a first measurement area by emitting beams onto a target surface of the object. The position measurement system further has a third interferometer and a fourth interferometer arranged to determine a distance of the object in the first direction when the object is in a second measurement area by emitting beams onto the target surface of the object. An arrangement of relative positions in a second direction of beams spots impinging on the target surface from the beams emitted by the first and second interferometers is different from an arrangement of relative positions in the second direction of beams spots impinging on the target surface from the beams emitted by the third and fourth interferometers.

Abstract: A method for calibrating a mirror of an interferometer system configured to measure a position of an object using two interferometers of the interferometer system that are arranged at opposite sides of the object and configured to measure the position of the object in the same X-direction, wherein two sets of measurements are obtained for different rotational orientations about an axis perpendicular to the X-direction to determine a shape of the mirror. There is also provided a position measuring method in which the obtained shape of the mirror is used to adjust measurements in the X-direction, a lithographic apparatus and a device manufacturing method making use of such a lithographic apparatus.

Abstract: A position measurement system including a first interferometer and a second interferometer arranged to determine a distance of the object in a first direction when the object is in a first measurement area by emitting beams onto a target surface of the object. The position measurement system further has a third interferometer and a fourth interferometer arranged to determine a distance of the object in the first direction when the object is in a second measurement area by emitting beams onto the target surface of the object. An arrangement of relative positions in a second direction of beams spots impinging on the target surface from the beams emitted by the first and second interferometers is different from an arrangement of relative positions in the second direction of beams spots impinging on the target surface from the beams emitted by the third and fourth interferometers.

Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

Abstract: An imprint lithography apparatus is disclosed that includes an imprint template holder arranged to hold an imprint template, and a plurality of position sensors configured to measure change of the size and/or shape of the imprint template, wherein the position sensors are mechanically isolated from the imprint template. Also disclosed is a lithography method that includes using an imprint template to imprint a pattern onto a substrate, and measuring changes of the size and/or shape of the imprint template while imprinting the pattern onto the substrate.

Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

Abstract: A lithographic method for measuring a position of a target grating with a mask sensor apparatus which comprises a plurality of detector modules each comprising a diffraction grating located at a mask side of a projection system of a lithographic apparatus and an associated detector, the method comprising a first step of measuring first intensities of a combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along a first direction; a second step of displacing the mask sensor apparatus relative to the target grating in a second direction, wherein a size of the relative displacement is proportional to a spatial frequency of a potential error; and a third step of measuring second intensities of the combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along the first direction.

Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

Abstract: A lithographic method for measuring a position of a target grating with a mask sensor apparatus which comprises a plurality of detector modules each comprising a diffraction grating located at a mask side of a projection system of a lithographic apparatus and an associated detector, the method comprising a first step of measuring first intensities of a combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along a first direction; a second step of displacing the mask sensor apparatus relative to the target grating in a second direction, wherein a size of the relative displacement is proportional to a spatial frequency of a potential error; and a third step of measuring second intensities of the combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along the first direction.

Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

Abstract: A lithographic apparatus comprising a support structure configured to be moved by a first scan distance during a single scanning operation when supporting a patterning device having a first extent in the scanning direction and to be moved by a second scan distance during a single scanning operation when supporting a patterning device having a second extent in the scanning N direction, and a substrate table configured to be moved by a third scan distance during a single scanning operation when the support structure supports a patterning device having the first extent in the scanning direction and to be moved by a fourth scan distance during a single scanning operation when the support structure supports a patterning device having the second extent in the scanning direction.

Abstract: A lithographic apparatus comprising a support structure configured to be moved by a first scan distance during a single scanning operation when supporting a patterning device having a first extent in the scanning direction and to be moved by a second scan distance during a single scanning operation when supporting a patterning device having a second extent in the scanning N direction, and a substrate table configured to be moved by a third scan distance during a single scanning operation when the support structure supports a patterning device having the first extent in the scanning direction and to be moved by a fourth scan distance during a single scanning operation when the support structure supports a patterning device having the second extent in the scanning direction.

Abstract: A method for calibrating an encoder scale having an array of marks in a first direction, includes moving the encoder scale in the first direction relative to a first encoder-type sensor, a second encoder-type sensor and a third encoder-type sensor, wherein the first encoder-type sensor and the second encoder-type sensor are fixedly spaced in the first direction at a first distance relative to each other, wherein the second encoder-type sensor and the third encoder-type sensor are fixedly spaced in the first direction at a second distance relative to each other.

Abstract: An imprint lithography apparatus is disclosed that includes an imprint template holder arranged to hold an imprint template, and a plurality of position sensors configured to measure change of the size and/or shape of the imprint template, wherein the position sensors are mechanically isolated from the imprint template. Also disclosed is a lithography method that includes using an imprint template to imprint a pattern onto a substrate, and measuring changes of the size and/or shape of the imprint template while imprinting the pattern onto the substrate.

Abstract: A method for calibrating an encoder scale having an array of marks in a first direction, includes moving the encoder scale in the first direction relative to a first encoder-type sensor, a second encoder-type sensor and a third encoder-type sensor, wherein the first encoder-type sensor and the second encoder-type sensor are fixedly spaced in the first direction at a first distance relative to each other, wherein the second encoder-type sensor and the third encoder-type sensor are fixedly spaced in the first direction at a second distance relative to each other.

Abstract: Method to calibrate a substrate table position in a lithographic apparatus includes providing a substrate on the substrate table with a two dimensional arrangement of patterns; positioning the substrate table with a positioning system; measuring positions of the substrate table in at least two dimensions with a position measurement system; reading out the arrangement of patterns as a function of the measured positions of the substrate table with a pattern read out system to obtain pattern read out results; deriving position errors as a function of the measured positions of the substrate table compared with the pattern read out results; calibrating the positioning system using the position errors, the calibrating including determining drift influences of the positioning system, correcting the position errors as a function of the corresponding two dimensional position of the substrate table with the determined drift influences, and calibrating the positioning system with the corrected position errors.

Abstract: An imprint lithography apparatus is disclosed that includes an imprint template holder arranged to hold an imprint template, and a plurality of position sensors configured to measure change of the size and/or shape of the imprint template, wherein the position sensors are mechanically isolated from the imprint template. Also disclosed is a lithography method that includes using an imprint template to imprint a pattern onto a substrate, and measuring changes of the size and/or shape of the imprint template while imprinting the pattern onto the substrate.

Abstract: Method to calibrate a substrate table position in a lithographic apparatus includes providing a substrate on the substrate table with a two dimensional arrangement of patterns; positioning the substrate table with a positioning system; measuring positions of the substrate table in at least two dimensions with a position measurement system; reading out the arrangement of patterns as a function of the measured positions of the substrate table with a pattern read out system to obtain pattern read out results; deriving position errors as a function of the measured positions of the substrate table compared with the pattern read out results; calibrating the positioning system using the position errors, the calibrating including determining drift influences of the positioning system, correcting the position errors as a function of the corresponding two dimensional position of the substrate table with the determined drift influences, and calibrating the positioning system with the corrected position errors.

Abstract: Method to calibrate a substrate table position in a lithographic apparatus includes providing a substrate on the substrate table with a two dimensional arrangement of patterns; positioning the substrate table with a positioning system; measuring positions of the substrate table in at least two dimensions with a position measurement system; reading out the arrangement of patterns as a function of the measured positions of the substrate table with a pattern read out system to obtain pattern read out results; deriving position errors as a function of the measured positions of the substrate table compared with the pattern read out results; calibrating the positioning system using the position errors, the calibrating including determining drift influences of the positioning system, correcting the position errors as a function of the corresponding two dimensional position of the substrate table with the determined drift influences, and calibrating the positioning system with the corrected position errors.

Abstract: A device manufacturing method includes projecting a patterned beam of radiation onto a substrate, wherein the position of a movable object is determined in a number of degrees of freedom using a number of sensors, the number of sensors being larger than the number of degrees of freedom, wherein the position of the movable object in the number of degrees of freedom is determined using signals of each of the sensors, wherein the signals of the sensors are weighed on the basis of the difference between noise levels of each of the sensors. Accuracy of the position measurement of movable object and/or overlay and focus performance are improved in lithographic apparatus.