Abstract: A switch actuating device for actuating a switch by eight types of non-tactile gestures performed with an object emitting heat includes a gesture sensor with four pixels configured to detect heat emitted by the object. The pixels include thin films made of pyroelectric sensitive material which generate a signal that has signal deflections corresponding to a temporal intensity curve of the heat detected by the thin film of the corresponding pixel. The types of the gestures are determined with a signal processing unit which controls an actuator to actuate the switch when a performance of one of the types of the gestures is determined. The gesture types are determined during an approach phase when the object approaches the gesture sensor, a waiting phase during when the object remains close to the gesture sensor, and a subsequent translational phase when the object moves in one of eight directions.

Abstract: A switch operating device (100) configured to operate a switch (103) with four possible types (111 to 114) of non-tactile translational gestures performed with a heat emitting part (115). A gesture sensor (1) is adapted to detect heat emitted by the part while performing one of the translational gesture types. Four pixels (21 to 24) are arranged next to each other and output a signal (51 to 54) per pixel, wherein the signal has a signal deflection (58) corresponding to the temporal intensity curve of the heat detected by the thin film of the corresponding pixel. A signal processing unit (101) determines the performance of the translational gesture types from the temporal succession of the signal deflections (58). An actuator (104) is controlled by the signal processing unit and operates the switch when one of the translational gesture types is determined.

Abstract: Switch operating device (100) with: a gesture sensor operating a switch (103) with a non-tactile push-gesture performed with a heat emitting part. The gesture has an approach phase (111) during which the part approaches the sensor, a waiting phase (113) during which the part remains proximate to the sensor, and a withdrawal phase (112) during which the part is moved away from the sensor. The sensor detects heat emitted by the part with at least one pixel and outputs per pixel a signal (51 to 54) with signal deflections (56, 57) corresponding to a temporal intensity curve of heat detected by the pixel while the gesture (115) is performed. A signal processing unit (101) which determines performance of the gesture from a temporal succession of signal deflections. An actuator (104) is controlled by the signal processing unit and operates the switch when the gesture is performed.

Abstract: The invention relates to a method for producing the thin film made of lead zirconate titanate in a 111-oriented perovskite structure, comprising the following steps: providing a substrate having a substrate temperature above 450° C. and a lead target, a zirconium target, and a titanium target; applying the thin film by sputtering lead, zirconium, and titanium from the respective targets onto the substrate, wherein the total deposition rate of lead, zirconium, and titanium is greater than 10 nm/min, the deposition rate of zirconium is selected in such a way that the atomic concentration of zirconium with respect to the atomic concentration of zirconium together with titanium in the thin film is between 0.2 and 0.

Abstract: Switch operating device (100) with: a presence sensor operating a switch (103) in response to presence of a heat emitting part. The presence has an approach phase (31) during which the part approaches the presence sensor, a remaining phase during which the part remains proximate to the sensor, and a withdrawal phase (41) during which the part is moved away from the sensor. The sensor detects heat emitted by the part with at least one pixel and outputs a signal (51 to 54) with signal deflections (56, 57) corresponding to a temporal intensity curve of heat detected by the pixel. A signal processing unit (101) determines the approach and withdrawal phases from the temporal succession and the shape of the signal deflections. An actuator (104) is controlled by the signal processing unit and operates the switch when the approach phase, the remaining phase and/or the withdrawal phase is determined.

Abstract: A Method for producing a microsystem (1) with pixels includes: producing a thermal silicon oxide layer on the surface of a silicon wafer as a base layer (5) by oxidation of the silicon wafer; producing a silicon oxide thin layer on the base layer as a carrier layer (6)by thermal deposition; producing a platinum layer on the carrier layer by thermal deposition, whereby an intermediate product is produced; cooling the intermediate product to room temperature; pixel-like structuring of the platinum layer by removing surplus areas of the platinum layer, whereby bottom electrodes (8, 12) of the pixels (7, 8) are formed in pixel shape on the carrier layer in remaining areas; removing material on the side of the silicon wafer facing away from the base layer, so a frame (3) remains and a membrane (4) formed by the base layer and the carrier layer is spanned by the frame.

Abstract: A switch actuating device for actuating a switch by eight types of non-tactile gestures performed with an object emitting heat includes a gesture sensor with four pixels configured to detect heat emitted by the object. The pixels include thin films made of pyroelectric sensitive material which generate a signal that has signal deflections corresponding to a temporal intensity curve of the heat detected by the thin film of the corresponding pixel. The types of the gestures are determined with a signal processing unit which controls an actuator to actuate the switch when a performance of one of the types of the gestures is determined. The gesture types are determined during an approach phase when the object approaches the gesture sensor, a waiting phase during when the object remains close to the gesture sensor, and a subsequent translational phase when the object moves in one of eight directions.

Abstract: A skin measuring device for spectroscopic measurement of the skin of a body part is provided. The skin measuring device has a press-on frame with a window and a flat face. The skin measuring device has an ATR infrared spectrometer which includes an ATR crystal that is secured to the press-on frame and that has a sample stage which is arranged in the window and faces in the same direction as the flat face of the press-on frame. An encircling means surrounds the body part and thereby supports the skin measuring device on the body part. The surface of the flat face of the press-on frame is pressed against the skin of the body pan by the encircling means in a comfortably wearable manner when the skin measuring device is worn such that the sample stage is in contact with the skin for spectroscopic measurement by the ATR spectrometer.

Abstract: A method for producing a micro system, said method comprising: providing a substrate (2) made of aluminum oxide; producing a thin film (6) on the substrate (2) by depositing lead zirconate titanate onto the substrate (2) with a thermal deposition method such that the lead zirconate titanate in the thin film (6) is self-polarized and is present predominantly in the rhombohedral phase; and cooling down the substrate (2) together with the thin film (6).

Abstract: An ATR infrared spectrometer for analyzing a chemical composition of a sample is provided including an elongated ATR crystal and having an entrance face, a longitudinal axis, a width, first and second longitudinal ends and an infrared light detector line with infrared-light-detecting regions. A first overall extent of all of the infrared-light-detecting regions corresponds to the width of ATR crystal. An infrared light emitter line has infrared-light-emitting regions and is arranged directly adjacent to the entrance face of the elongated ATR crystal. A sample is arranged adjacent to the ATR crystal between the infrared light emitter line and the infrared light detector line. Infrared light is emitted by the infrared light emitter line to directly enter said ATR crystal via said entrance face. The light is guided in the ATR crystal to said infrared light detector line thereby undergoing total internal reflection and thereby interacting with said sample.

Abstract: An ATR infrared spectrometer for analyzing a chemical composition of a sample is provided including an elongated ATR crystal and having an entrance face, a longitudinal axis, a width, first and second longitudinal ends and an infrared light detector line with infrared-light-detecting regions. A first overall extent of all of the infrared-light-detecting regions corresponds to the width of ATR crystal. An infrared light emitter line has infrared-light-emitting regions and is arranged directly adjacent to the entrance face of the elongated ATR crystal. A sample is arranged adjacent to the ATR crystal between the infrared light emitter line and the infrared light detector line. Infrared light is emitted by the infrared light emitter line to directly enter said ATR crystal via said entrance face. The light is guided in the ATR crystal to said infrared light detector line thereby undergoing total internal reflection and thereby interacting with said sample.

Abstract: A sensor system for detecting motion in a predefined direction of motion (30) of an infrared light source (29) has at least one pair of infrared light sensors (4, 5; 36, 37), which are arranged side by side with respect to the direction of motion (30) and, thus, define a sensor coverage zone (17) determined by the distance between distal ends (16) (with respect to the direction of motion) of the infrared light sensors. During exposure to the infrared light source, the sensors provide electrical signals, the charge signs of which are opposite each other, for detecting the motion of the infrared light source (29). The sensor system (1) has a window (7) positioned between the infrared light source (29) and the sensors such that the infrared light of the infrared light source (29) radiates onto the sensors.

Abstract: Switch operating device (100) with: a gesture sensor operating a switch (103) with a non-tactile push-gesture performed with a heat emitting part. The gesture has an approach phase (111) during which the part approaches the sensor, a waiting phase (113) during which the part remains proximate to the sensor, and a withdrawal phase (112) during which the part is moved away from the sensor. The sensor detects heat emitted by the part with at least one pixel and outputs per pixel a signal (51 to 54) with signal deflections (56, 57) corresponding to a temporal intensity curve of heat detected by the pixel while the gesture (115) is performed. A signal processing unit (101) which determines performance of the gesture from a temporal succession of signal deflections. An actuator (104) is controlled by the signal processing unit and operates the switch when the gesture is performed.

Abstract: A Method for producing a microsystem (1) with pixels includes: producing a thermal silicon oxide layer on the surface of a silicon wafer as a base layer (5) by oxidation of the silicon wafer; producing a silicon oxide thin layer on the base layer as a carrier layer (6)by thermal deposition; producing a platinum layer on the carrier layer by thermal deposition, whereby an intermediate product is produced; cooling the intermediate product to room temperature; pixel-like structuring of the platinum layer by removing surplus areas of the platinum layer, whereby bottom electrodes (8, 12) of the pixels (7, 8) are formed in pixel shape on the carrier layer in remaining areas; removing material on the side of the silicon wafer facing away from the base layer, so a frame (3) remains and a membrane (4) formed by the base layer and the carrier layer is spanned by the frame.

Abstract: Switch operating device (100) with: a presence sensor operating a switch (103) in response to presence of a heat emitting part. The presence has an approach phase (31) during which the part approaches the presence sensor, a remaining phase during which the part remains proximate to the sensor, and a withdrawal phase (41) during which the part is moved away from the sensor. The sensor detects heat emitted by the part with at least one pixel and outputs a signal (51 to 54) with signal deflections (56, 57) corresponding to a temporal intensity curve of heat detected by the pixel. A signal processing unit (101) determines the approach and withdrawal phases from the temporal succession and the shape of the signal deflections. An actuator (104) is controlled by the signal processing unit and operates the switch when the approach phase, the remaining phase and/or the withdrawal phase is determined.

Abstract: A switch operating device (100) configured to operate a switch (103) with four possible types (111 to 114) of non-tactile translational gestures performed with a heat emitting part (115). A gesture sensor (1) is adapted to detect heat emitted by the part while performing one of the translational gesture types. Four pixels (21 to 24) are arranged next to each other and output a signal (51 to 54) per pixel, wherein the signal has a signal deflection (58) corresponding to the temporal intensity curve of the heat detected by the thin film of the corresponding pixel. A signal processing unit (101) determines the performance of the translational gesture types from the temporal succession of the signal deflections (58). An actuator (104) is controlled by the signal processing unit and operates the switch when one of the translational gesture types is determined.

Abstract: In a device for detecting thermal radiation, at least one membrane is provided on which at least one thermal detector element is mounted for the conversion of the thermal radiation into an electric signal and at least one circuit support for carrying the membrane and for carrying at least one readout circuit for reading out the electrical signal, the detector element and the readout circuit being connected together electrically by an electric contact which passes through the membrane. In addition, a method of producing the device with the following method steps is provided: a) provision of the membrane with the detector element and of at least one electrical through-connection and provision of the circuit support and b) bringing together the membrane and the circuit support in such a manner that the detector element and the readout circuit are connected together electrically by an electrical contact passing through the membrane.

Abstract: An infrared light sensor chip comprises a substrate (2), an infrared light sensor (9), which has a base electrode (10) that is in direct contact with one side (8) of the substrate (2) and which is used to attach the infrared light sensor (9) to the substrate (2), and a resistance thermometer (13), which has a resistance path (14) in direct contact with the side (8) of the substrate (2) adjacent to the infrared light sensor (9) and configured to measure the temperature of the substrate (2) via the resistance thermometer (13). The resistance path (14) is made of the same material of which the base electrode (10) is made.

Abstract: A sensor system for detecting motion in a predefined direction of motion (30) of an infrared light source (29) has at least one pair of infrared light sensors (4, 5; 36, 37), which are arranged side by side with respect to the direction of motion (30) and, thus, define a sensor coverage zone (17) determined by the distance between distal ends (16) (with respect to the direction of motion) of the infrared light sensors. During exposure to the infrared light source, the sensors provide electrical signals, the charge signs of which are opposite each other, for detecting the motion of the infrared light source (29). The sensor system (1) has a window (7) positioned between the infrared light source (29) and the sensors such that the infrared light of the infrared light source (29) radiates onto the sensors.

Abstract: A method for producing a micro system, said method comprising: providing a substrate (2) made of aluminum oxide; producing a thin film (6) on the substrate (2) by depositing lead zirconate titanate onto the substrate (2) with a thermal deposition method such that the lead zirconate titanate in the thin film (6) is self-polarized and is present predominantly in the rhombohedral phase; and cooling down the substrate (2) together with the thin film (6).