Abstract: An example electrical connector includes a body to receive a circuit board. The body includes a first end and a second end. The electrical connector also includes a first latch rotatably attaches to the first end. The electrical connector further includes a second latch rotatably attaches to the second end. The electrical connector further includes a link member attached to the body. In response to a rotation of the first latch, the link member is to slide across the body from the first latch towards the second latch to rotate the second latch.

Abstract: An example electrical connector includes a body to receive a circuit board. The body includes a first end and a second end. The electrical connector also includes a first latch rotatably attaches to the first end. The electrical connector further includes a second latch rotatably attaches to the second end. The electrical connector further includes a link member attached to the body. In response to a rotation of the first latch, the link member is to slide across the body from the first latch towards the second latch to rotate the second latch.

Abstract: An example balancing structure includes a stand and a balancing structure. The stand is to support the object to stand on a plane, and adjust a position of the object. The balancing structure is installed on a base of the stand and is to balance a tipping force of the base suffered from an adjustment of the position of the object.

Abstract: An example balancing structure includes a stand and a balancing structure. The stand is to support the object to stand on a plane, and adjust a position of the object. The balancing structure is installed on a base of the stand and is to balance a tipping force of the base suffered from an adjustment of the position of the object.

Abstract: Embodiments of the present disclosure provide methods for patterning a hardmask layer disposed on a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one embodiment, a method of patterning a hardmask layer on a metal layer disposed on a substrate includes supplying a first etching gas mixture comprising a carbon-fluorine containing gas and a chlorine containing gas into a processing chamber to etch a portion of a hardmask layer disposed on a metal layer formed on a substrate, supplying a second etching gas mixture comprising a hydrocarbon gas into the processing chamber to clean the substrate, and supplying a third etching gas mixture comprising a carbon-fluorine containing gas to remove a remaining portion of the hardmask layer until a surface of the metal layer is exposed.