Abstract: Disclosed herein is a method of making a light emitting device having an LED die and a molded encapsulant made by polymerizing at least two polymerizable compositions. The method includes: (a) providing an LED package having an LED die disposed in a reflecting cup, the reflecting cup filled with a first polymerizable composition such that the LED die is encapsulated; (b) providing a mold having a cavity filled with a second polymerizable composition; (c) contacting the first and second polymerizable compositions; (d) polymerizing the first and second polymerizable compositions to form first and second polymerized compositions, respectively, wherein the first and second polymerized compositions are bonded together; and (e) optionally separating the mold from the second polymerized composition. Light emitting devices prepared according to the method are also described.

Abstract: Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wave-length. A primary portion of the emitted first wavelength light exits the LED from a top surface of the LED that has a minimum lateral dimension Wmin. The remaining portion of the emitted first wavelength light exits the LED from one or more sides of the LED that has a maximum edge thickness Tmax (122, 124). The ratio Wmin/Tmax is at least 30. The light emitting system further includes a re-emitting semiconductor construction that includes a semiconductor potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the LED from the top surface and converts at least a portion of the received light to light of a second wavelength.

Abstract: A pixelated light emitting diode (LED) and a method for pixelating an LED are described. The pixelated LED includes two or more monolithically integrated electroluminescent elements disposed adjacent each other on a substrate, wherein at least a portion of each electroluminescent element immediately adjacent the substrate includes an inverted truncated pyramidal shape. The method for pixelating an LED includes selectively removing material from the major surface of an LED to a depth below the emissive region, thereby forming an array of inverted truncated pyramid shapes. The efficiency of the pixelated LEDs can be improved by incorporating the truncated pyramidal shape. Additionally, the crosstalk between adjacent LED pixels can be reduced by incorporating the truncated pyramidal shape.

Abstract: Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength ?1 to visible light at a second wavelength ?2, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength ?2. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.

Abstract: A stack of semiconductor layers (310) forms a re-emitting semiconductor construction (RSC). The stack (310) includes an active region (316) that converts light at a first wavelength to light at a second wavelength, the active region (316) including at least one potential well. The stack (310) also includes an inactive region (318) extending from an outer surface of the stack to the active region. Depressions (326) are formed in the stack (310) that extend from the outer surface into the inactive region (318). An average depression depth is at least 50% of a thickness of the inactive region. Alternatively, the average depression depth is at least 50% of a nearest potential well distance. Still other alternative characterizations of the depressions (326) are also disclosed. The depressions (326) may have at least a 40% packing density in plan view. The depressions (326) may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.

Abstract: A molding operation produces an extractor array by providing a mold having a plurality of cavities therein, each cavity being adapted to form an extractor suitable for coupling to an LED die; filling the mold with a plurality of glass particles; heating the glass particles above glass transition temperatures thereof so that the particles are reshaped to conform to the cavity shapes; and forming a land layer that extends between the cavities. The land layer maintains the extractors in a fixed spatial relationship with each other for subsequent handling or processing, such as a simultaneous polishing operation or in attaching the extractor array to a corresponding LED array.

Abstract: Disclosed herein is a method of making a light emitting device having an LED die and a molded encapsulant made by polymerizing at least two polymerizable compositions. The method includes: (a) providing an LED package having an LED die disposed in a reflecting cup, the reflecting cup filled with a first polymerizable composition such that the LED die is encapsulated; (b) providing a mold having a cavity filled with a second polymerizable composition; (c) contacting the first and second polymerizable compositions; (d) polymerizing the first and second polymerizable compositions to form first and second polymerized compositions, respectively, wherein the first and second polymerized compositions are bonded together; and (e) optionally separating the mold from the second polymerized composition. Light emitting devices prepared according to the method are also described.

Abstract: A light source has an active layer (204) disposed between a first doped semiconductor layer (206) and a second doped semiconductor layer (208). The active layer has energy levels associated with light of a first wavelength. Light emitting elements (216) are positioned on the surface of the first doped semiconductor layer (206) for non-radiative excitation by the active layer. The light emitting elements are capable of emitting light at a second wavelength different from the first wavelength. In some embodiments a grid electrode (213) is disposed on the first doped semiconductor layer and defines open regions (214) of a surface of the first doped layer, the first plurality of light emitting elements being positioned in the open regions. In some embodiments a second plurality of light emitting elements is disposed over the first plurality of light emitting elements for non-radiative excitation by at least some of the first plurality of light emitting elements.

Abstract: A light source comprises an electroluminescent device that generates pump light and a wavelength converter that includes an absorbing element for absorbing at least some of the pump light. A first layer of light emitting elements is positioned proximate the absorbing element for non-radiative transfer of energy from the absorbing element to the light emitting elements. At least some of the light emitting elements are capable of emitting light having a wavelength longer than the wavelength of the pump light. In some embodiments the electroluminescent device is a light emitting diode (LED) that has a doped semiconductor layer positioned between the LED's active layer and the light emitting elements. The first doped semiconductor layer may have a thickness in excess of 20 nm. A second layer of light emitting elements may be positioned for non-radiative energy transfer from the first layer of light emitting elements.

Abstract: Disclosed herein is a method of making a light emitting device having an LED die and a molded encapsulant made by polymerizing at least two polymerizable compositions. The method includes: (a) providing an LED package having an LED die disposed in a reflecting cup, the reflecting cup filled with a first polymerizable composition such that the LED die is encapsulated; (b) providing a mold having a cavity filled with a second polymerizable composition; (c) contacting the first and second polymerizable compositions; (d) polymerizing the first and second polymerizable compositions to form first and second polymerized compositions, respectively, wherein the first and second polymerized compositions are bonded together; and (e) optionally separating the mold from the second polymerized composition. Light emitting devices prepared according to the method are also described.

Abstract: Electrically pixelated luminescent devices incorporating optical elements, methods for forming electrically pixelated luminescent devices incorporating optical elements, and systems including electrically pixelated luminescent devices incorporating optical elements.

Abstract: A light emitting device includes a wavelength converter attached to a light emitting diode (LED). The wavelength converter may have etched patterns on both the first and second sides. In some embodiments the first and second sides of the converter each include a respective structure having a different width at its top than at its base. The wavelength converter may include a first photoluminescent element substantially overlying a first region of the LED without overlying a second region of the LED, while a second photoluminescent element substantially overlies the second region without overlying the first region. In some embodiments a passivation layer is disposed over the etched pattern of the first side. A window layer may be disposed between the first and second photoluminescent elements, with non-epitaxial material disposed on first and second sides of one region of the window layer.

Abstract: A method of forming a light conversion element includes providing a semiconductor construction having a first photoluminescent element epitaxially grown together with a second photoluminescent element. A first region is etched in the first photoluminescent element from a first side of the semiconductor construction and a second region is etched in the second photoluminescent element from a second side of the semiconductor construction. In some embodiments the wavelength converter is attached to an electroluminescent element, such as a light emitting diode (LED).

Abstract: A process for making a microlens array or a microlens array masterform comprises (a) providing a photoreactive composition, the photoreactive composition comprising (1) at least one reactive species that is capable of undergoing an acid- or radical-initiated chemical reaction, and (2) at least one multiphoton photoinitiator system; and (b) imagewise exposing at least a portion of the composition to light sufficient to cause simultaneous absorption of at least two photons, thereby inducing at least one acid- or radical-initiated chemical reaction where the composition is exposed to the light, the imagewise exposing being carried out in a pattern that is effective to define at least the surface of a plurality of microlenses, each of the microlenses having a principal axis and a focal length, and at least one of the microlenses being an aspherical microlens.

Abstract: An electroluminescent device emits light at a pump wavelength. A first photoluminescent element covers first and second regions of the electroluminescent device and converts at least some of the pump light from the first region of the electroluminescent device to light at a first wavelength. A second photoluminescent element covers the second region of the electroluminescent device without covering the first region of the electroluminescent device and converts at least some of the light of the pump wavelength to light at a second wavelength different from the first wavelength. In some embodiments the first and second photoluminescent elements convert substantially all of the pump light incident from the first and second regions of the electroluminescent device respectively. An etch-stop layer may separate the first and second photoluminescent elements.

Abstract: Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength from a top surface of the electroluminescent device. The light emitting system further includes a construction proximate a side of the electroluminescent device for blocking light at the first wavelength that would otherwise exit the side. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the electroluminescent device and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.

Abstract: Electrically pixelated luminescent devices, methods for forming electrically pixelated luminescent devices, systems including electrically pixelated luminescent devices, methods for using electrically pixelated luminescent devices.

Abstract: Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength. The light emitting system further includes an optical cavity that enhances emission of light from a top surface of the light emitting system and suppresses emission of light from one or more sides of the light emitting system. The optical cavity includes a semiconductor multilayer stack that receives the emitted first wavelength light and converts at least a portion of the received light to light of a second wavelength. The semiconductor multilayer stack includes a II-VI potential well. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 10 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.

Abstract: Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wavelength and includes a pattern that enhances emission of light from a top surface of the LED and suppresses emission of light from one or more sides of the LED. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the LED and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.

Abstract: Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wave-length. A primary portion of the emitted first wavelength light exits the LED from a top surface of the LED that has a minimum lateral dimension Wmin. The remaining portion of the emitted first wavelength light exits the LED from one or more sides of the LED that has a maximum edge thickness Tmax (122, 124). The ratio Wmin/Tmax is at least 30. The light emitting system further includes a re-emitting semiconductor construction that includes a semiconductor potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the LED from the top surface and converts at least a portion of the received light to light of a second wavelength.