Abstract: The present invention relates to paste compositions comprising an indium metal powder; and an organic vehicle. The organic vehicle includes one or more C8-C18 fatty acids; a salt formed from a C4-C6 carboxylic acid and a tertiary alkanolamine; a cationic catalyst; a thixotrope; and a diluent.

Abstract: The present invention relates to electrical interconnect structures formed from a lithographically defined polymer coating in conjunction with a conductive paste, and methods for forming same.

Abstract: Invention compositions are a replacement for high melting temperature solder pastes and preforms in high operating temperature and step-soldering applications. In the use of the invention, a mixture of metallic powders reacts below 350 degrees C. to form a dense metallic joint that does not remelt at the original process temperature.

Abstract: Thermally conductive adhesive materials having a first metallic component with a high melting point metal; a second metallic component having a low melting point metal; a fatty acid, an optional amine, an optional triglyceride and optional additives. Also provided are methods of making the same and uses thereof for adhering electronic components to substrates.

Abstract: Thermally conductive adhesive materials having a first metallic component with a high melting point metal; a second metallic component having a low melting point metal; a fatty acid, an optional amine, an optional triglyceride and optional additives. Also provided are methods of making the same and uses thereof for adhering electronic components to substrates.

Abstract: Paste compositions comprising 40-70 percent by weight (wt %) of a low melting point (LMP) particle composition comprising Y; 25-65 wt % of a high melting point (HMP) particle composition comprising M; and 1-15 wt % of a fluxing vehicle. The reaction products formed between M and Y are crystalline intermetallics that are solids at temperature T1 and the surface area of said HMP particle composition is in the range of 0.07 to 0.18 square meters per gram of Y in said composition. Also provided are methods of contacting electronic compositions using the paste compositions.

Abstract: A semiconductor die attach composition with greater than 60% metal volume after thermal reaction having: (a) 80-99 wt % of a mixture of metal particles comprising 30-70 wt % of a lead-free low melting point (LMP) particle composition comprising at least one LMP metal Y that melts below a temperature T1, and 25-70 wt % of a high melting point (HMP) particle composition comprising at least one metallic element M that is reactive with the at least one LMP metal Y at a process temperature T1, wherein the ratio of wt % of M to wt % of Y is at least 1.0; (b) 0-30 wt % of a metal powder additive A; and (c) a fluxing vehicle having a volatile portion, and not more than 50 wt % of a non-volatile portion.

Abstract: An inventive composition and process for formation of a conductive bonding film are disclosed. The invention combines adhesive bonding sheet technologies (e.g. die attach films, or DAFs) with the electrical and thermal conductivity performance of transient liquid phase sintered paste compositions. The invention films are characterized by high bulk thermal and electrical conductivity within the film as well as low and stable thermal and electrical resistance at the interfaces between the inventive film and metallized adherends.

Abstract: A semiconductor die attach composition with greater than 60% metal volume after thermal reaction having: (a) 80-99 wt % of a mixture of metal particles comprising 30-70 wt % of a lead-free low melting point (LMP) particle composition comprising at least one LMP metal Y that melts below a temperature T1, and 25-70 wt % of a high melting point (HMP) particle composition comprising at least one metallic element M that is reactive with the at least one LMP metal Y at a process temperature T1, wherein the ratio of wt % of M to wt % of Y is at least 1.0; (b) 0-30 wt % of a metal powder additive A; and (c) a fluxing vehicle having a volatile portion, and not more than 50 wt % of a non-volatile portion.

Abstract: Sintering die-attach materials provide a lead-free solution for semiconductor packages with superior electrical, thermal and mechanical performance to prior art alternatives. Wafer-applied sintering materials form a metallurgical bond to both semiconductor die and adherends as well as throughout the die-attach joint and do not remelt at the original process temperature. Application to either one or both sides of the wafer, as well as paste a film application are disclosed.

Abstract: Invention z-axis interconnection structures provide a means to mechanically and electrically interconnect layers of metallization in electronic substrates reliably and in any configuration. Invention z-axis interconnection structures comprise a novel bonding film and conductive paste and one- and two-piece building block structures formed therefrom.

Abstract: Invention compositions are a replacement for high melting temperature solder pastes and preforms in high operating temperature and step-soldering applications. In the use of the invention, a mixture of metallic powders reacts below 350 degrees C. to form a dense metallic joint that does not remelt at the original process temperature.

Abstract: Transient liquid phase sintering compositions comprising one or more high melting point metals and one or more low melting temperature alloys are known in the art as useful compositions for creating electrically and/or thermally conductive pathways in electronic applications. The present invention provides transient liquid phase sintering compositions that employ non-eutectic low melting temperature alloys for improved sintering and metal matrix properties.

Abstract: The present invention provides conductive metal compositions for electronic applications, and methods of preparation and uses thereof. More specifically, the present invention provides metallic particle transient liquid phase sintering compositions containing blended formulations of metal and metal alloy components that form interconnected conductive metallurgical networks with increased stability, resistance to thermal stress and ability to mitigate CTE mismatch between materials.

Abstract: Invention z-axis interconnection structures provide a means to mechanically and electrically interconnect layers of metallization in electronic substrates reliably and in any configuration. Invention z-axis interconnection structures comprise a novel bonding film and conductive paste and one- and two-piece building block structures formed therefrom.

Abstract: Sintering die-attach materials provide a lead-free solution for semiconductor packages with superior electrical, thermal and mechanical performance to prior art alternatives. Wafer-applied sintering materials form a metallurgical bond to both semiconductor die and adherends as well as throughout the die-attach joint and do not remelt at the original process temperature. Application to either one or both sides of the wafer, as well as paste a film application are disclosed.

Abstract: Transient liquid phase sintering compositions comprising one or more high melting point metals and one or more low melting temperature alloys are known in the art as useful compositions for creating electrically and/or thermally conductive pathways in electronic applications. The present invention provides transient liquid phase sintering compositions that employ non-eutectic low melting temperature alloys for improved sintering and metal matrix properties.

Abstract: The present invention provides electrically and thermally conductive compositions for forming interconnections between electronic elements. Invention compositions comprise three or more metal or metal alloy particle types and an organic vehicle comprising a flux that is application specific. The first particle type includes a reactive high melting point metal that reacts with a reactive low melting point metal(s) in the other particles to form intermetallic species. The reactive low melting point metal(s) of the invention are provided in two distinct particle forms. The first reactive low melting point metal particle includes a carrier that facilitates the reaction with the reactive high melting point metal. The second reactive low melting point metal particle acts primarily as a source of the reactive low melting point metal.

Abstract: The present invention provides conductive metal compositions for electronic applications, and methods of preparation and uses thereof. More specifically, the present invention provides metallic particle transient liquid phase sintering compositions containing blended formulations of metal and metal alloy components that form interconnected conductive metallurgical networks with increased stability, resistance to thermal stress and ability to mitigate CTE mismatch between materials.

Abstract: The present invention provides electrically and thermally conductive compositions for forming interconnections between electronic elements. Invention compositions comprise three or more metal or metal alloy particle types and an organic vehicle comprising a flux that is application specific. The first particle type includes a reactive high melting point metal that reacts with a reactive low melting point metal(s) in the other particles to form intermetallic species. The reactive low melting point metal(s) of the invention are provided in two distinct particle forms. The first reactive low melting point metal particle includes a carrier that facilitates the reaction with the reactive high melting point metal. The second reactive low melting point metal particle acts primarily as a source of the reactive low melting point metal.