Patents by Inventor Cha-Hsin Chao
Cha-Hsin Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240021474Abstract: A method of forming a semiconductor device includes forming a source/drain region on a substrate and forming a first interlayer dielectric (ILD) layer over the source/drain region. The method further includes forming a second ILD layer over the first ILD layer, forming a source/drain contact structure within the first ILD layer and the second ILD layer, and selectively removing a portion of the source/drain contact structure to form a concave top surface of the source/drain contact structure.Type: ApplicationFiled: July 31, 2023Publication date: January 18, 2024Applicant: Taiwan Semiconductor Manufacturing Co., Lid.Inventors: Yun-Yu HSIEH, Ying Ting HSIA, Jeng Chang HER, Cha-Hsin CHAO, Yi-Wei CHIU, Li-Te HSU
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Patent number: 11776847Abstract: A method of forming a semiconductor device includes forming a source/drain region on a substrate and forming a first interlayer dielectric (ILD) layer over the source/drain region. The method further includes forming a second ILD layer over the first ILD layer, forming a source/drain contact structure within the first ILD layer and the second ILD layer, and selectively removing a portion of the source/drain contact structure to form a concave top surface of the source/drain contact structure.Type: GrantFiled: August 9, 2021Date of Patent: October 3, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yun-Yu Hsieh, Jeng Chang Her, Cha-Hsin Chao, Yi-Wei Chiu, Li-Te Hsu, Ying Ting Hsia
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Patent number: 11532515Abstract: A method includes forming a bottom source/drain contact plug in a bottom inter-layer dielectric. The bottom source/drain contact plug is electrically coupled to a source/drain region of a transistor. The method further includes forming an inter-layer dielectric overlying the bottom source/drain contact plug. A source/drain contact opening is formed in the inter-layer dielectric, with the bottom source/drain contact plug exposed through the source/drain contact opening. A dielectric spacer layer is formed to have a first portion extending into the source/drain contact opening and a second portion over the inter-layer dielectric. An anisotropic etching is performed on the dielectric spacer layer, and a remaining vertical portion of the dielectric spacer layer forms a source/drain contact spacer. The remaining portion of the source/drain contact opening is filled to form an upper source/drain contact plug.Type: GrantFiled: October 9, 2020Date of Patent: December 20, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Tsang Hsieh, Cha-Hsin Chao, Yi-Wei Chiu, Li-Te Hsu, Ying Ting Hsia
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Publication number: 20220392811Abstract: The present disclosure provides a method and a system therefore for processing wafer. The method includes: monitoring a distribution of particles in a chamber while processing the wafer; determining at least one parameter according to the distribution of the particles for configuring at least one device of the chamber; configuring the at least one device of the chamber according to the at least one parameter; and processing another wafer based on a recipe after configuring the at least one device of the chamber.Type: ApplicationFiled: June 7, 2021Publication date: December 8, 2022Inventors: PO-JU CHEN, SHENG-JEN CHENG, CHA-HSIN CHAO, CHIH-TENG LIAO
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Publication number: 20220319818Abstract: An apparatus includes a processing chamber, a substrate support in the processing chamber, a plasma source coupled to the processing chamber, and a plurality of heating devices arranged on the processing chamber. Each heating device is configured to emit laser beam on a substrate positioned on the substrate support to heat the substrate.Type: ApplicationFiled: March 31, 2021Publication date: October 6, 2022Inventors: Po-Ju CHEN, Cha-Hsin CHAO, Chih-Teng LIAO
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Patent number: 11424364Abstract: A finFET device and a method of forming are provided. The device includes a transistor comprising a gate electrode and a first source/drain region next to the gate electrode, the gate electrode being disposed over a first substrate. The device also includes a first dielectric layer extending along the first source/drain region, and a second dielectric layer overlying the first dielectric layer. The device also includes a contact disposed in the first dielectric layer and in the second dielectric layer, the contact contacting the gate electrode and the first source/drain region. A first portion of the first dielectric layer extends between the contact and the gate electrode. The contact extends along a sidewall of the first portion of the first dielectric layer and a first surface of the first portion of the first dielectric layer, the first surface of the first portion being farthest from the first substrate.Type: GrantFiled: March 8, 2021Date of Patent: August 23, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Xi-Zong Chen, Te-Chih Hsiung, Cha-Hsin Chao, Yi-Wei Chiu
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Patent number: 11232978Abstract: In a method for manufacturing a semiconductor device, a first interlayer dielectric layer is formed over a substrate. First recesses are formed in the first interlayer dielectric layer. First metal wirings are formed in the first recesses. A first etch-resistance layer is formed in a surface of the first interlayer dielectric layer between the first metal wirings but not on upper surfaces of the first metal wirings. A first insulating layer is formed on the first etch-resistance layer and the upper surfaces of the first metal wirings.Type: GrantFiled: April 10, 2020Date of Patent: January 25, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jeng Chang Her, Cha-Hsin Chao, Yi-Wei Chiu, Li-Te Hsu, Ying Ting Hsia
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Patent number: 11211496Abstract: A finFET device and a method of forming are provided. The device includes a transistor comprising a gate electrode and a first source/drain region next to the gate electrode, the gate electrode being disposed over a first substrate. The device also includes a first dielectric layer extending along the first source/drain region, and a second dielectric layer overlying the first dielectric layer. The device also includes a contact disposed in the first dielectric layer and in the second dielectric layer, the contact contacting the gate electrode and the first source/drain region. A first portion of the first dielectric layer extends between the contact and the gate electrode. The contact extends along a sidewall of the first portion of the first dielectric layer and a first surface of the first portion of the first dielectric layer, the first surface of the first portion being farthest from the first substrate.Type: GrantFiled: July 23, 2020Date of Patent: December 28, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Xi-Zong Chen, Te-Chih Hsiung, Cha-Hsin Chao, Yi-Wei Chiu
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Publication number: 20210366770Abstract: A method of forming a semiconductor device includes forming a source/drain region on a substrate and forming a first interlayer dielectric (ILD) layer over the source/drain region. The method further includes forming a second ILD layer over the first ILD layer, forming a source/drain contact structure within the first ILD layer and the second ILD layer, and selectively removing a portion of the source/drain contact structure to form a concave top surface of the source/drain contact structure.Type: ApplicationFiled: August 9, 2021Publication date: November 25, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yun-Yu Hsieh, Jeng Chang Her, Cha-Hsin Chao, Yi-Wei Chiu, Li-Te Hsu, Ying Ting Hsia
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Patent number: 11139174Abstract: A method includes forming a mask layer over a target layer. A first etching process is performed on the mask layer to form a first opening and a second opening in the mask layer. A second etching process is performed on the mask layer to reduce an end-to-end spacing between the first opening and the second opening. The first etching process and the second etching process have different anisotropy properties. A pattern of the mask layer is transferred to the target layer.Type: GrantFiled: December 16, 2019Date of Patent: October 5, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Xi-Zong Chen, Yun-Yu Hsieh, Cha-Hsin Chao, Li-Te Hsu
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Patent number: 11088025Abstract: A method of forming a semiconductor device includes forming a source/drain region on a substrate and forming a first interlayer dielectric (ILD) layer over the source/drain region. The method further includes forming a second ILD layer over the first ILD layer, forming a source/drain contact structure within the first ILD layer and the second ILD layer, and selectively removing a portion of the source/drain contact structure to form a concave top surface of the source/drain contact structure.Type: GrantFiled: May 26, 2020Date of Patent: August 10, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yun-Yu Hsieh, Jeng Chang Her, Cha-Hsin Chao, Yi-Wei Chiu, Li-Te Hsu, Ying Ting Hsia
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Publication number: 20210193832Abstract: A finFET device and a method of forming are provided. The device includes a transistor comprising a gate electrode and a first source/drain region next to the gate electrode, the gate electrode being disposed over a first substrate. The device also includes a first dielectric layer extending along the first source/drain region, and a second dielectric layer overlying the first dielectric layer. The device also includes a contact disposed in the first dielectric layer and in the second dielectric layer, the contact contacting the gate electrode and the first source/drain region. A first portion of the first dielectric layer extends between the contact and the gate electrode. The contact extends along a sidewall of the first portion of the first dielectric layer and a first surface of the first portion of the first dielectric layer, the first surface of the first portion being farthest from the first substrate.Type: ApplicationFiled: March 8, 2021Publication date: June 24, 2021Inventors: Xi-Zong Chen, Te-Chih Hsiung, Cha-Hsin Chao, Yi-Wei Chiu
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Patent number: 11022878Abstract: The present disclosure describes a method for improving post-photolithography critical dimension (CD) uniformity for features printed on a photoresist. A layer can be formed on one or more printed features and subsequently etched to improve overall CD uniformity across the features. For example the method includes a material layer disposed over a substrate and a photoresist over the material layer. The photoresist is patterned to form a first feature with a first critical dimension (CD) and a second feature with a second CD that is larger than the first CD. Further, a layer is formed with one or more deposition/etch cycles in the second feature to form a modified second CD that is nominally equal to the first CD.Type: GrantFiled: October 18, 2019Date of Patent: June 1, 2021Assignee: Taiwan Semiconductor Manufacturing Co.. Ltd.Inventors: Xi-Zong Chen, Cha-Hsin Chao, Yi-Wei Chiu, Li-Te Hsu, Chih-Hsuan Lin
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Patent number: 10985053Abstract: An embodiment method includes patterning an opening through a dielectric layer, depositing an adhesion layer along sidewalls and a bottom surface of the opening, depositing a first mask layer in the opening over the adhesion layer, etching back the first mask layer below a top surface of the dielectric layer, and widening an upper portion of the opening after etching back the first mask layer. The first mask layer masks a bottom portion of the opening while widening the upper portion of the opening. The method further includes removing the first mask layer after widening the upper portion of the opening and after removing the first mask layer, forming a contact in the opening by depositing a conductive material in the opening over the adhesion layer.Type: GrantFiled: April 22, 2019Date of Patent: April 20, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Xi-Zong Chen, Y. H. Kuo, Cha-Hsin Chao, Yi-Wei Chiu, Li-Te Hsu
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Publication number: 20210028062Abstract: A method includes forming a bottom source/drain contact plug in a bottom inter-layer dielectric. The bottom source/drain contact plug is electrically coupled to a source/drain region of a transistor. The method further includes forming an inter-layer dielectric overlying the bottom source/drain contact plug. A source/drain contact opening is formed in the inter-layer dielectric, with the bottom source/drain contact plug exposed through the source/drain contact opening. A dielectric spacer layer is formed to have a first portion extending into the source/drain contact opening and a second portion over the inter-layer dielectric. An anisotropic etching is performed on the dielectric spacer layer, and a remaining vertical portion of the dielectric spacer layer forms a source/drain contact spacer. The remaining portion of the source/drain contact opening is filled to form an upper source/drain contact plug.Type: ApplicationFiled: October 9, 2020Publication date: January 28, 2021Inventors: Yi-Tsang Hsieh, Cha-Hsin Chao, Yi-Wei Chiu, Li-Te Hsu, Ying Ting Hsia
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Patent number: 10879109Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a recess in a layer. The recess has two opposite first inner walls and two opposite second inner walls, the first inner walls are spaced apart by a first distance, the second inner walls are spaced apart by a second distance, and the first distance is less than the second distance. The method includes depositing a first covering layer in the recess. The first covering layer covering the first inner walls is thinner than the first covering layer covering the second inner walls. The method includes removing the first covering layer over the first inner walls and a bottom surface of the recess.Type: GrantFiled: April 20, 2020Date of Patent: December 29, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Xi-Zong Chen, Chih-Hsuan Lin, Cha-Hsin Chao, Yi-Wei Chiu, Li-Te Hsu
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Publication number: 20200357913Abstract: A finFET device and a method of forming are provided. The device includes a transistor comprising a gate electrode and a first source/drain region next to the gate electrode, the gate electrode being disposed over a first substrate. The device also includes a first dielectric layer extending along the first source/drain region, and a second dielectric layer overlying the first dielectric layer. The device also includes a contact disposed in the first dielectric layer and in the second dielectric layer, the contact contacting the gate electrode and the first source/drain region. A first portion of the first dielectric layer extends between the contact and the gate electrode. The contact extends along a sidewall of the first portion of the first dielectric layer and a first surface of the first portion of the first dielectric layer, the first surface of the first portion being farthest from the first substrate.Type: ApplicationFiled: July 23, 2020Publication date: November 12, 2020Inventors: Xi-Zong Chen, Te-Chih Hsiung, Cha-Hsin Chao, Yi-Wei Chiu
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Patent number: 10804149Abstract: A method includes forming a bottom source/drain contact plug in a bottom inter-layer dielectric. The bottom source/drain contact plug is electrically coupled to a source/drain region of a transistor. The method further includes forming an inter-layer dielectric overlying the bottom source/drain contact plug. A source/drain contact opening is formed in the inter-layer dielectric, with the bottom source/drain contact plug exposed through the source/drain contact opening. A dielectric spacer layer is formed to have a first portion extending into the source/drain contact opening and a second portion over the inter-layer dielectric. An anisotropic etching is performed on the dielectric spacer layer, and a remaining vertical portion of the dielectric spacer layer forms a source/drain contact spacer. The remaining portion of the source/drain contact opening is filled to form an upper source/drain contact plug.Type: GrantFiled: July 25, 2018Date of Patent: October 13, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Tsang Hsieh, Cha-Hsin Chao, Yi-Wei Chiu, Li-Te Hsu, Ying Ting Hsia
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Publication number: 20200286781Abstract: A method of forming a semiconductor device includes forming a source/drain region on a substrate and forming a first interlayer dielectric (ILD) layer over the source/drain region. The method further includes forming a second ILD layer over the first ILD layer, forming a source/drain contact structure within the first ILD layer and the second ILD layer, and selectively removing a portion of the source/drain contact structure to form a concave top surface of the source/drain contact structure.Type: ApplicationFiled: May 26, 2020Publication date: September 10, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yun-Yu HSIEH, Jeng Chang HER, Cha-Hsin CHAO, Yi-Wei CHIU, Li-Te HSU, Ying Ting HSIA
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Publication number: 20200251382Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a recess in a layer. The recess has two opposite first inner walls and two opposite second inner walls, the first inner walls are spaced apart by a first distance, the second inner walls are spaced apart by a second distance, and the first distance is less than the second distance. The method includes depositing a first covering layer in the recess. The first covering layer covering the first inner walls is thinner than the first covering layer covering the second inner walls. The method includes removing the first covering layer over the first inner walls and a bottom surface of the recess.Type: ApplicationFiled: April 20, 2020Publication date: August 6, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Xi-Zong CHEN, Chih-Hsuan LIN, Cha-Hsin CHAO, Yi-Wei CHIU, Li-Te HSU