Patents by Inventor Cha-Young You

Cha-Young You has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming dielectric structures and capacitors
    Patent number: 7425493
    Abstract: A capacitor including a dielectric structure, a lower electrode may be formed on a substrate. The dielectric structure may be formed on the lower electrode, and may include a first thin film, which may improve a morphology of the dielectric structure, and a second thin film, which may have at least one of an EOT larger than that of the first thin film and a dielectric constant higher than that of the first thin film. An upper electrode may be formed on the dielectric structure, and the dielectric structure may have an improved morphology and/or a higher dielectric constant.
    Type: Grant
    Filed: February 17, 2005
    Date of Patent: September 16, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung-Ryul Yoon, Han-Mei Choi, Seung-Hwan Lee, Dae-Sik Choi, Ki-Yeon Park, Young-Sun Kim, Sung-Tae Kim, Cha-Young You
  • Methods of forming a layer utilizing a liquid-phase lanthanum precursor and methods of manufacturing a capacitor using the same
    Publication number: 20060072281
    Abstract: The present invention can provide methods of forming a layer including lanthanum by utilizing a lanthanum precursor existing in a liquid phase at a room temperature. The present invention can further provide methods of forming layers including lanthanum on objects and methods of manufacturing a capacitor.
    Type: Application
    Filed: August 4, 2005
    Publication date: April 6, 2006
    Inventors: Gab-Jin Nam, Young-Geun Park, Young-Sun Kim, Han-Mei Choi, Seung-Hwan Lee, Ki-Yeon Park, Cha-Young You
  • Methods of forming dielectric structures and capacitors
    Publication number: 20050170601
    Abstract: A capacitor including a dielectric structure, a lower electrode may be formed on a substrate. The dielectric structure may be formed on the lower electrode, and may include a first thin film, which may improve a morphology of the dielectric structure, and a second thin film, which may have at least one of an EOT larger than that of the first thin film and a dielectric constant higher than that of the first thin film. An upper electrode may be formed on the dielectric structure, and the dielectric structure may have an improved morphology and/or a higher dielectric constant.
    Type: Application
    Filed: February 17, 2005
    Publication date: August 4, 2005
    Inventors: Kyoung-Ryul Yoon, Han-Mei Choi, Seung-Hwan Lee, Dae-Sik Choi, Ki-Yeon Park, Young-Sun Kim, Sung-Tae Kim, Cha-Young You