Patents by Inventor Chalykh Roman

Chalykh Roman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9466490
    Abstract: A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof.
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: October 11, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sanghyun Kim, Chalykh Roman, Jongju Park, Donggun Lee, Seongsue Kim
  • Publication number: 20160172207
    Abstract: A method of manufacturing a pellicle membrane includes forming a silicon layer on a substrate, forming a mask pattern on the silicon layer, and performing a wet etching process on the silicon layer exposed by the mask pattern to form silicon patterns with an uneven structure. A contact area between the silicon patterns and the substrate may be larger than that between the silicon patterns and the mask pattern, and each of the silicon patterns may be formed in such a way that a side surface thereof has an ascending slope in a vertical direction oriented from the substrate toward the mask pattern and is a crystal plane of (111).
    Type: Application
    Filed: December 1, 2015
    Publication date: June 16, 2016
    Inventors: Sungwon KWON, Chalykh ROMAN
  • Patent number: 9176375
    Abstract: Methods of reducing a registration error of a photomask are provided. A method of reducing a registration error of a photomask may include identifying the registration error with respect to a pattern element in a pattern region of the photomask. Moreover, the method may include reducing a thickness of a portion of a non-pattern region of the photomask by irradiating an energy beam onto a location of the non-pattern region of the photomask that is spaced apart from the pattern element, to generate stress at the pattern element. Related photomasks and methods of manufacturing an integrated circuit are also provided.
    Type: Grant
    Filed: February 10, 2014
    Date of Patent: November 3, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-hyun Kim, Seong-sue Kim, Dong-gun Lee, Chalykh Roman, Mun-ja Kim
  • Publication number: 20150311078
    Abstract: A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof.
    Type: Application
    Filed: June 16, 2015
    Publication date: October 29, 2015
    Inventors: Sanghyun Kim, Chalykh Roman, Jongju Park, Donggun Lee, Seongsue Kim
  • Patent number: 9087698
    Abstract: A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: July 21, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sanghyun Kim, Chalykh Roman, Jongju Park, Donggun Lee, Seongsue Kim
  • Publication number: 20140363633
    Abstract: Methods of reducing a registration error of a photomask are provided. A method of reducing a registration error of a photomask may include identifying the registration error with respect to a pattern element in a pattern region of the photomask. Moreover, the method may include reducing a thickness of a portion of a non-pattern region of the photomask by irradiating an energy beam onto a location of the non-pattern region of the photomask that is spaced apart from the pattern element, to generate stress at the pattern element. Related photomasks and methods of manufacturing an integrated circuit are also provided.
    Type: Application
    Filed: February 10, 2014
    Publication date: December 11, 2014
    Inventors: Sang-hyun Kim, Seong-sue Kim, Dong-gun Lee, Chalykh Roman, Mun-ja Kim
  • Publication number: 20140076867
    Abstract: A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof.
    Type: Application
    Filed: March 8, 2013
    Publication date: March 20, 2014
    Inventors: Sanghyun Kim, Chalykh Roman, Jongju Park, Donggun Lee, Seongsue Kim