Abstract: A pattern matching method for use in manufacturing a semiconductor memory device increases a pattern matching rate between a GDS image and an SEM image. The pattern matching method includes extracting a scanning electron microscope (SEM) image and a graphic data system (GDS) image to perform a pattern matching; performing a two-dimensional Fourier transform (FFT) for the extracted GDS image and analyzing a low spatial frequency; deciding whether or not a pattern is a repeated pattern or non-repeated pattern by using the analyzed low spatial frequency; and limiting an X/Y range for a pattern matching when the decision result is for the repeated pattern, and then performing the pattern matching between the SEM image and the GDS image.

Abstract: A pattern matching method for use in manufacturing a semiconductor memory device increases a pattern matching rate between a GDS image and an SEM image. The pattern matching method includes extracting a scanning electron microscope (SEM) image and a graphic data system (GDS) image to perform a pattern matching; performing a two-dimensional furrier transform (FFT) for the extracted GDS image and analyzing a low spatial frequency; deciding whether or not a pattern is a repeated pattern or non-repeated pattern by using the analyzed low spatial frequency; and limiting an X/Y range for a pattern matching when the decision result is for the repeated pattern, and then performing the pattern matching between the SEM image and the GDS image.

Abstract: A global matching method for semiconductor memory device fabrication may include extracting a graphic data system (GDS) image and a scanning electron microscope (SEM) image of patterns in a region on a wafer. First directional edges extending in a first direction and second directional edges extending in a second direction may be separately extracted from each of the GDS image and the SEM image with the first and second directions being different. The GDS image and the SEM image may be matched with respect to either the first directional edges or the second directional edges which are relatively shorter. After the relatively shorter edges of the GDS image and the SEM image are matched, the GDS image and the SEM image may be matched with respect to relatively longer edges, based on a result of the matching with respect to the relatively shorter edges, thereby completing pattern matching of the GDS image and the SEM image.