Patents by Inventor ChanSam Chang

ChanSam Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a semiconductor device including high voltage and low voltage MOS devices
    Patent number: 8735238
    Abstract: Methods and devices for forming both high-voltage and low-voltage transistors on a common substrate using a reduced number of processing steps are disclosed. An exemplary method includes forming at least a first high-voltage transistor well and a first low-voltage transistor well on a common substrate separated by an isolation structure extending a first depth into the substrate, using a first mask and first implantation process to simultaneously implant a doping material of a first conductivity type into a channel region of the low-voltage transistor well and a drain region for the high-voltage transistor well.
    Type: Grant
    Filed: March 3, 2011
    Date of Patent: May 27, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: ChanSam Chang, Shigenobu Maeda, HeonJong Shin, ChangBong Oh
  • SEMICONDUCTOR DEVICE INCLUDING HIGH VOLTAGE AND LOW VOLTAGE MOS DEVICES
    Publication number: 20110151642
    Abstract: Methods and devices for forming both high-voltage and low-voltage transistors on a common substrate using a reduced number of processing steps are disclosed. An exemplary method includes forming at least a first high-voltage transistor well and a first low-voltage transistor well on a common substrate separated by an isolation structure extending a first depth into the substrate, using a first mask and first implantation process to simultaneously implant a doping material of a first conductivity type into a channel region of the low-voltage transistor well and a drain region for the high-voltage transistor well.
    Type: Application
    Filed: March 3, 2011
    Publication date: June 23, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: ChanSam CHANG, Shigenobu MAEDA, HeonJong SHIN, ChangBong OH
  • Semiconductor device including high voltage and low voltage MOS devices
    Patent number: 7923805
    Abstract: Methods and devices for forming both high-voltage and low-voltage transistors on a common substrate using a reduced number of processing steps are disclosed. An exemplary method includes forming at least a first high-voltage transistor well and a first low-voltage transistor well on a common substrate separated by an isolation structure extending a first depth into the substrate, using a first mask and first implantation process to simultaneously implant a doping material of a first conductivity type into a channel region of the low-voltage transistor well and a drain region for the high-voltage transistor well.
    Type: Grant
    Filed: September 19, 2006
    Date of Patent: April 12, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: ChanSam Chang, Shigenobu Maeda, HeonJong Shin, ChangBong Oh
  • Asymmetric semiconductor device and fabrication method
    Publication number: 20070138592
    Abstract: Methods and devices for forming both high-voltage and low-voltage transistors on a common substrate using a reduced number of processing steps are disclosed. An exemplary method includes forming at least a first high-voltage transistor well and a first low-voltage transistor well on a common substrate separated by an isolation structure extending a first depth into the substrate, using a first mask and first implantation process to simultaneously implant a doping material of a first conductivity type into a channel region of the low-voltage transistor well and a drain region for the high-voltage transistor well.
    Type: Application
    Filed: September 19, 2006
    Publication date: June 21, 2007
    Inventors: ChanSam Chang, Shigenobu Maeda, HeonJong Shin, ChangBong Oh